DLA SMD-5962-89845 REV D-2009 MICROCIRCUIT DIGITAL HIGH-SPEED CMOS QUAD 2-INPUT NAND SCHMITT TRIGGER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. Technical and editorial changes throughout. Add case outlines D and 2. 92-04-16 Michael A. Frye B Add vendor CAGE F8859. Add device class V criteria. Add case outline X. Add table III, delta limits. Editorial changes throughou

2、t. Update boilerplate. LTG 00-06-22 Monica L. Poelking C Correct table II. Update boilerplate to MIL-PRF-38535 requirements. jak 02-02-08 Thomas M. Hess D Update boilerplate paragraphs to the current MIL-PRF-38535 requirements. - LTG 09-08-12 Thomas M. Hess CURRENT CAGE CODE 67268 REV SHET REV SHET

3、REV STATUS REV D D D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Monica L. Poelking DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND A

4、GENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Monica L. Poelking APPROVED BY Michael A. Frye MICROCIRCUIT, DIGITAL, HIGH-SPEED CMOS, QUAD 2-INPUT NAND SCHMITT TRIGGER, MONOLITHIC SILICON DRAWING APPROVAL DATE 89-09-07 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 14933 5962-89845 SHEET 1 OF 14 DSCC F

5、ORM 2233 APR 97 5962-E423-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89845 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. T

6、his drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Ra

7、diation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following examples. For device classes M and Q: 5962 - 89845 01 C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Case outline (see 1.2.4)Lead finish (see 1.2.5) /

8、/Drawing number For device class V: 5962 - 89845 02 V C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) /Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devi

9、ces meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s

10、). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54HCT132 Quad 2-input NAND schmitt trigger, TTL compatible inputs 02 54HC132 Quad 2-input NAND schmitt trigger 1.2.3 Device class designator. The device class designator is a single letter

11、identifying the product assurance level as listed below. Since the device class designator has been added after the original issuance of this drawing, device classes M and Q designators will not be included in the PIN and will not be marked on the device. Device class Device requirements documentati

12、on M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 Provided by IHSNot for ResaleNo reproduction or networking permitted without license

13、from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89845 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Term

14、inals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line D GDFP1-F14 or CDFP2-F14 14 Flat pack 2 CQCC1-N20 20 Square leadless chip carrier X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for devi

15、ce class M. 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0 V dc DC input voltage range (VIN) -0.5 V dc to VCC+0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+0.5 V dc Input clamp diode current (IIK) 20 mA Output clamp diode current (IOK) 20 mA Continuo

16、us output current . 25 mA Continuous current through VCCor GND . 50 mA Storage temperature range (TSTG) . -65C to +150C Maximum power dissipation (PD): 500 mW 4/ Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175

17、C 5/ 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC): Device type 01 . +4.5 V dc to +5.5 V dc Device type 02 . +2.0 V dc to +6.0 V dc Input voltage range (VIN) 0.0 V dc to VCCOutput voltage range (Vout) 0.0 V dc to VCCMinimum High-level input voltage (VIH) 2.0 V Maximum Low-le

18、vel input voltage (VIL) 0.8 V Case operating temperature range (TC) -55C to +125C Input rise or fall time (tr, tf) : VCC= 4.5 V 0 to unlimited 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and

19、affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ For TC= +100C to +125C, derate linearly at 12 mW/C. 5/ Maximum junction te

20、mperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89845 DEFENSE SU

21、PPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless other

22、wise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-

23、1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the St

24、andardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents cited in the solicitatio

25、n or contract. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JEDEC Standard No. 7 - Standard for Description of 54/74HCXXXXX and 54/74HCTXXXXX High-Speed CMOS Devices. (Copies of these documents are available online at http:/www.jedec.org or from Electronic Industries Alliance, 2500 Wilson Boulevard, Arlingt

26、on, VA 22201-3834). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obta

27、ined. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the for

28、m, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dime

29、nsions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified

30、on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Hysteresis definition, characterization, and test set up. The Hysteresis definition, characterization, and test set up shall be as specif

31、ied in figure 4. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89845 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 3.2.6 Switching waveforms and tes

32、t circuit. The switching waveforms and test circuit shall be as specified in figure 5. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified

33、in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PI

34、N listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA design

35、ator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ a

36、s required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the require

37、ments of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved

38、 source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance

39、 as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see

40、 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable requir

41、ed documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 36 (see MIL-PRF-38535, appendix A). Provided by IHSNot f

42、or ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89845 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Test cond

43、itions 1/ -55C TC +125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max Positive-going threshold voltage VT+ VCC= 4.5 V 01 1, 2, 3 1.2 1.9 V VCC= 5.5 V 2/ 01 1.4 2.1VCC= 2.0 V 02 0.7 1.5 VCC= 4.5 V 02 1.5 3.15 VCC= 6.0 V 02 2.1 4.2 Negative-going threshold voltage VT- VC

44、C= 4.5 V 01 1, 2, 3 0.5 1.2 V VCC= 5.5 V 2/ 01 0.6 1.4VCC= 2.0 V 02 0.3 1.0 VCC= 4.5 V 02 0.9 2.45 VCC= 6.0 V 02 1.2 3.2 Hysterisis voltage VHYS VCC= 4.5 V 01 1, 2, 3 0.4 1.4 V VCC= 5.5 V 2/ 01 0.4 1.5VCC= 2.0 V 02 0.2 1.2 VCC= 4.5 V 02 0.4 2.1 VCC= 6.0 V 02 0.5 2.5 High level output voltage VOHVIN=

45、 VIHor VILIOH= -20 A VCC= 4.5 V, CMOS loads 01 1, 2, 3 4.4 V VIN= VIHor VILIOH= -4.0 mA VCC= 4.5 V, TTL loads 01 1 3.98 2, 3 3.7 VIN= VIHor VILIOH= -20 A VCC= 2.0 V 02 1, 2, 3 1.9 V VCC= 4.5 V 4.4 VCC= 6.0 V 5.9 VIN= VIHor VILIOH= -4.0 mA VCC= 4.5 V 02 1 3.98 2, 3 3.7 VIN= VIHor VILIOH= -5.2 mA VCC=

46、 6.0 V 02 1 5.48 2, 3 5.2 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-89845 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234

47、APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Test conditions 1/ -55C TC +125C unless otherwise specified Device type Group A subgroups Limits Unit Min Max Low level output voltage VOLVIN= VIHor VILIOL= 20 A VCC= 4.5 V, CMOS loads 01 1, 2, 3 0.1 V VIN= VIHor VILIOL= 4

48、.0 mA VCC= 4.5 V, TTL loads 01 1 0.26 2, 3 0.4 VIN= VIHor VILIOL= 20 A VCC= 2.0 V 02 1, 2, 3 0.1 VCC= 4.5 V 0.1 VCC= 6.0 V 0.1 VIN= VIHor VILIOL= 4.0 mA VCC= 4.5 V 02 1 0.26 2, 3 0.4 VIN= VIHor VILIOL= 5.2 mA VCC= 6.0 V 02 1 0.26 2, 3 0.4 Input leakage current IINVCC= 5.5 V VIN= VCCor GND 01 1 0.1 A 2, 3 1.0 VCC= 6.0 V VIN= VCCor GND 02 1 0.1 2, 3 1.0 Quiescent supply current ICCVCC= 5.5 V VIN= VCCor GND IOUT= 0 A 01 1 2.0 A 2, 3 40.0 VCC= 6.0 V VIN= VCCor GND IOUT= 0 A 02 1 2.0 2, 3 40.0 Quiescent supply current ICCAny one input, VIN = 2.4