DLA SMD-5962-90719 REV B-2006 MICROCIRCUIT LINEAR ARINC 429 BUFFER RECEIVER MULTI-CHANNEL MONOLITHIC SILICON《硅单块 多沟道429缓冲器或接收器 直线型微型电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A In accordance with N.O.R. 5962-R038-96. 96-01-11 M. A. FRYE B Drawing updated to reflect current requirements. Redrawn. - ro 06-11-07 R. MONNIN REV SHET REV B B B SHEET 15 16 17 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5

2、 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY DAN WONNELL DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY SANDRA ROONEY COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE AND AGENCIES OF THE DEPARTM

3、ENT OF DEFENSE DRAWING APPROVAL DATE 92-12-11 MICROCIRCUIT, LINEAR, ARINC 429 BUFFER / RECEIVER, MULTI-CHANNEL, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-90719 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E035-07 Provided by IHSNot for ResaleNo reproduction or networking p

4、ermitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90719 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (

5、device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as s

6、hown in the following example: 5962 - 90719 01 M X X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices

7、 meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s).

8、The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 EF4442 ARINC 429 multi-channel buffer/receiver 1/ 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class

9、 Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as des

10、ignated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDIP2-T28 or GDIP1-T28 28 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. _ 1/ This cir

11、cuit was designed to be compatible with Aeronautical Radio, Inc., (ARINC), 429 of Mark 33 Digital Information Transfer System, (DITS), which defines the air transport industrys standards for the transfer of digital data between avionics systems elements. Provided by IHSNot for ResaleNo reproduction

12、or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90719 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ Supply voltage range (VCC) -0.3 V dc to +7.0 V dc Storage temp

13、erature range . -65C to +150C Power dissipation (PD) 600 mW Lead temperature (soldering, 5 seconds) +270C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) 50C/W Junction temperature (TJ) . +150C 1.4 Recommended operating conditions. Supply vol

14、tage range (VCC) 4.5 V dc to 5.5 V dc High level input voltage, logic inputs (VIH) 2.0 V dc to VCCLow level input voltage, logic inputs (VIL) GND to 0.8 V dc Minimum high level output voltage (VOH) . VCC 0.75 V dc Maximum low level output voltage (VOL) 0.5 V dc Frequency of operation (fOP) 2.0 MHz C

15、ase operating temperature range (TC) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these docum

16、ents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Comp

17、onent Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardizatio

18、n Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applica

19、ble laws and regulations unless a specific exemption has been obtained. _ 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or n

20、etworking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90719 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V

21、shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in

22、accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, app

23、endix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Logic diagram. The logic diagram shall be as specified on figure 2. 3.3 Electrical perfo

24、rmance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requireme

25、nts. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where markin

26、g of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535

27、. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PR

28、F-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be requi

29、red from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes

30、 Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendi

31、x A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this dra

32、wing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer.

33、3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 107 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRA

34、WING SIZE A 5962-90719 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TC +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxHigh lev

35、el output voltage VOHN0 N1, D0-D7, IOH= -250 A 1,2,3 All 2.4 VCCV IRQ /V, IOH= 10 A VCCLow level output voltage VOLIOL= 3.2 mA, VCC= 4.5 V, IRQ /V 1,2,3 All 0.4 V IOL= 1.6 mA, VCC= 4.5 V, N0 N1, D0-D7 0.4 High impedance (off state) output high current IOHZVO= 2.4 V 1,2,3 All 10 A High impedance (off

36、 state) output low current IOLZVO= 0.4 V 1,2,3 All -10 A High level input voltage VIHAll inputs except MODE and IRQ /V 1,2,3 All 2.2 V Low level input voltage VILAll inputs except MODE and IRQ /V 1,2,3 All 0.8 V Supply current ICCVCC= 5.5 V 1,2,3 All 105 mA Input state leakage current IINAll inputs

37、except MODE and IRQ /V, VIN= 0.4 V to 5.25 V 1,2,3 All -10 A Three state leakage current ITSIN0 N1, D0-D7, VIN= 0.4 V to 2.4 V 1,2,3 All -10 10 A Input capacitance CINVIN= 0 V, f = 1.0 MHz, TA= +25C, see 4.4.1b, all inputs except MODE and IRQ /V 4 All 10 pF External high programmation impedance (MOD

38、E, IRQ /V) 2/ ZH Scan frequency = fCLOCK 8, CL 20 pF 4 All 10 k External low programmation impedance (MODE, IRQ /V) 2/ ZL Scan frequency = fCLOCK 8, CL 20 pF 4 All 10 Functional tests FT See 4.4.1c 7,8A, 8B All See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking

39、 permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90719 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TC +125C unless ot

40、herwise specified Group A subgroups Device type Limits Unit Min MaxRead A mode timing characteristics Address input hold time (A0-A1, R W /INH, CS ) tAH1See figure 3 9,10,11 All 10 ns Data access time (D0-D7) tACC1See figure 3 9,10,11 All 300 ns Data output hold time (D0-D7) tDH1See figure 3 9,10,11

41、 All 10 ns Write A mode timing characteristics Address input setup time (A0-A1, R W /INH, CS ) tAS1See figure 3 9,10,11 All 50 ns Address input hold time (A0-A1, R W /INH, CS ) tAH2See figure 3 9,10,11 All 10 ns Data input setup time (D0-D7) tDSSee figure 3 9,10,11 All 100 ns Data input hold time (D

42、0-D7) tDH2See figure 3 9,10,11 All 50 ns Read B mode timing characteristics Address setup time (A0-A1, CS , R W /INH) tAS2See figure 3 9,10,11 All 50 ns Address input hold time (A0-A1, CS , R W /INH) tAH3See figure 3 9,10,11 All 10 ns Data output hold time (N0-N1, D0-D7) tDH3See figure 3 9,10,11 All

43、 10 ns Data access time (N0-N1, D0-D7) tACC2See figure 3 9,10,11 All 300 ns R W /INH setup time tSI See figure 3 9,10,11 All 50 ns Clock timing characteristics A-mode cycle time tCASee figure 3 9,10,11 All 500 2000 ns B-mode cycle time tCBSee figure 3 9,10,11 All 1000 2000 ns Pulse width - high tWHS

44、ee figure 3 9,10,11 All 180 2000 ns Pulse width - low tWLSee figure 3 9,10,11 All 180 2000 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90719 DEFENSE SUPPLY CENTER COLUMBU

45、S COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TC +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxIRQ /V output timing characteristics Propagation d

46、elay time, low to high tPLHSee figure 3 9,10,11 All 1600 ns Propagation delay time, high to low tPHLSee figure 3 9,10,11 All 1000 ns 1/ 4.5 V VCC 5.5 V and VSS= 0 V, unless otherwise specified. 2/ If not tested, shall be guaranteed to the limits specified in table I. 4. VERIFICATION 4.1 Sampling and

47、 inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device c

48、lass M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-ST