DLA SMD-5962-90811 REV F-2013 MICROCIRCUIT LINEAR VOLTAGE DETECTOR PROGRAMMABLE MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with N.O.R. 5962-R076-94. 94-01-06 M. A. Frye B Redrawn with changes. Add case outline X. Technical and editorial changes throughout. 95-12-05 M. A. Frye C Drawing updated to reflect current requirements. - ro 00-09-14 Raymo

2、nd Monnin D Drawing updated to reflect current requirements. - ro 03-03-11 Raymond Monnin E Correction to figure 2, block diagram. Editorial changes throughout. - drw 08-01-02 Robert M. Heber F Make a correction to figure 2. Editorial changes throughout. - drw 13-02-04 Charles F. Saffle THE ORIGINAL

3、 FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV F F F F F F F F F F OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY Dan Wonnell DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Sandra Rooney COLUMBUS, OHIO 43218-3990 http:/www.landa

4、ndmaritime.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, VOLTAGE DETECTOR, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 92-05-18 PROGRAMMABLE, MONOLITHIC SILICON AMSC N/A REVISION LEVEL F SIZE A CAGE CODE 67268 5962-

5、90811 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E243-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90811 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 2 DSCC FORM 2234 APR 97 1. S

6、COPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When availabl

7、e, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 90811 01 M P A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead fini

8、sh (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and

9、are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types identify the circuit function as follows: Device type Generic number Circuit function 01 MAX8211 Programmable voltage detector 02 MAX8212 Programmable voltage detector, high cu

10、rrent output 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits

11、 in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can H GDFP1-F10 or CDFP2-F10 10 Flat p

12、ack P GDIP1-T8 or CDIP2-T8 8 Dual-in-line X CDFP3-F10 10 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from

13、 IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90811 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (+VS) . -0.5 V to +18 V Output voltage (VOUT) -0.5 V to +18 V Hysteresis voltage (VHYS) +0.5 V to 18

14、 V w.r.t +VSThreshold input voltage (VTH) -0.5 V to +VS+0.5 V Current into any terminal (IIN) 50 mA Power dissipation (PD): Case G 536 mW 2/ Cases H and X 421 mW 2/ Case P . 640 mW 2/ Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) . +300C Junction temperature (TJ)

15、 . +150C Thermal resistance, junction-to-case (JC): Case G 45C/W Cases H and X 85C/W Case P . 55C/W Thermal resistance, junction-to-ambient (JA): Case G 150C/W Cases H and X 190C/W Case P . 125C/W 1.4 Recommended operating conditions. Supply voltage range (+VS) . 2 V to 16.5 V Ambient operating temp

16、erature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cit

17、ed in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outline

18、s. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building

19、4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption

20、 has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ For case G, derate 6.7mW/C above +70C, for cases H and X derate 5.26 mW/C above +70C, and for case

21、 P derate 8 mW/C above +70C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90811 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requi

22、rements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described her

23、ein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-

24、PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. Th

25、e block diagram shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the

26、full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In additi

27、on, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marki

28、ng for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The

29、compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1

30、herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of suppl

31、y for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for

32、 device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (se

33、e 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufactu

34、rers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 105 (see MIL-PRF-3853

35、5, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90811 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteris

36、tics. Test Symbol Conditions -55C TA +125C +VS= 5 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Supply current +IS+VS= 2 V, 5 V, 16.5 V, 1/ VTH= GND, +VS1 All 15 A +VS= 2.2 V, 5 V, 16.5 V, VTH= GND, +VS2, 3 20 Threshold trip voltage VTHP+VS= 16.5 V, IOUT= 4 mA 1 All

37、1.11 1.19 V +VS= 2 V, IOUT= 500 A +VS= 16.5 V, IOUT= 3 mA 2, 3 1.05 1.25 +VS= 2.2 V, IOUT= 500 A Threshold input current ITHVTH= GND, +VS1 All 10 nA 2, 3 20 Output leakage current IOLKVOUT= 16.5 V, VTH= 1.3 V 1, 2, 3 01 30 A VOUT= 5 V, VTH= 1.3 V 10 VOUT= 16.5 V, VTH= 0.9 V 02 30 VOUT= 5 V, VTH= 0.9

38、 V 10 Output saturation voltage VSATIOUT= 2 mA, VTH= 1.0 V, TA= +25C 1 01 0.4 V IOUT= 2 mA, VTH= 1.3 V, TA= +25C 02 0.4 Maximum available output current IOHVTH= 1.0 V 1, 2, 3 01 4.0 mA VTH= 1.3 V 02 12 Hysteresis leakage current IHYS+VS= 16.5 V, VHYS= GND, VTH= 0.9 V 1, 2, 3 All 3 A Hysteresis satur

39、ation voltage VHYS (max) IHYS= 0.5 mA, VTH= 1.3 V measured w.r.t +VS, TA= +25C 1 All -0.2 V Maximum available hysteresis current IHYS (max) VTH= 1.3 V, VHYS= 0 V, TA= +25C 1 All 2 mA 1/ VTH 8 V for normal operation, except under stress testing. Provided by IHSNot for ResaleNo reproduction or network

40、ing permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90811 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 6 DSCC FORM 2234 APR 97 Device types All Case outlines G H and X P Terminal number Terminal symbol 1 THRESH NC NC 2 OUTPUT HYST HYST 3 NC

41、THRESH THRESH 4 GROUND OUTPUT OUTPUT 5 NC GROUND GROUND 6 NC NC NC 7 +VSNC NC 8 HYST +VS+VS9 - - - NC - - - 10 - - - NC - - - NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRA

42、WING SIZE A 5962-90811 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 7 DSCC FORM 2234 APR 97 FIGURE 2. Block diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90811 DLA LAND AN

43、D MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL F SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM)

44、 plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-P

45、RF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria

46、 for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition B or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify

47、the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The bu

48、rn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and