ImageVerifierCode 换一换
格式:PDF , 页数:13 ,大小:65.63KB ,
资源ID:699879      下载积分:10000 积分
快捷下载
登录下载
邮箱/手机:
温馨提示:
快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。 如填写123,账号就是123,密码也是123。
特别说明:
请自助下载,系统不会自动发送文件的哦; 如果您已付费,想二次下载,请登录后访问:我的下载记录
支付方式: 支付宝扫码支付 微信扫码支付   
验证码:   换一换

加入VIP,免费下载
 

温馨提示:由于个人手机设置不同,如果发现不能下载,请复制以下地址【http://www.mydoc123.com/d-699879.html】到电脑端继续下载(重复下载不扣费)。

已注册用户请登录:
账号:
密码:
验证码:   换一换
  忘记密码?
三方登录: 微信登录  

下载须知

1: 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。
2: 试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。
3: 文件的所有权益归上传用户所有。
4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
5. 本站仅提供交流平台,并不能对任何下载内容负责。
6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。

版权提示 | 免责声明

本文(DLA SMD-5962-90815 REV B-2001 MICROCIRCUIT LINEAR HIGH SPEED BUFFER MONOLITHIC SILICON《硅单块 高速缓冲器直线式微型电路》.pdf)为本站会员(fuellot230)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-90815 REV B-2001 MICROCIRCUIT LINEAR HIGH SPEED BUFFER MONOLITHIC SILICON《硅单块 高速缓冲器直线式微型电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing being updated to reflect current requirements. - ro 00-09-13 R. MONNIN B Make change to FLAG pin output high current test as specified in table I. - ro 01-11-13 R. MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHE

2、T REV SHET REV STATUS REV B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY JOSEPH A. KERBY DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY CHARLES E. BESORE COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY

3、 ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, HIGH SPEED BUFFER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 91-12-16 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-90815 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E072-02 DISTRIBUTION

4、STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90815 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2 DSCC

5、 FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Numbe

6、r (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 90815 01 M G X Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2

7、) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A spe

8、cified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 LM6125 High speed buffer 1.2.3 Device class designator. The d

9、evice class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q o

10、r V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for dev

11、ice classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90815 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3 DSC

12、C FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) 18 V Input to output voltage 7 V 2/ Input voltage (VIN) VSFLAG output voltage .GND VFLAG +VSOutput short-circuit to GND Continuous 3/ Power dissipation (PD) .750 mW 4/ Storage temperature range -65C to +150C Junction temperature

13、 (TJ) .+150C Lead temperature (soldering, 10 seconds) .+260C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) .150C/W 1.4 Recommended operating conditions. Supply voltage (VS) 15 V Ambient operating temperature range (TA) -55C to +125C 2. APPLIC

14、ABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defens

15、e Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL

16、-STD-1835 - Interface Standard Electronic Component Case Outlines. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ During current limit or thermal limit, the input cu

17、rrent will increase if the input to output differential voltage exceeds 8 V. For input to output differential voltages in excess of 8 V the current should be limited to 20 mA. 3/ This buffer device contains current limit and thermal shutdown to protect against fault conditions. 4/ For operation at e

18、levated temperatures, derate based on thermal resistance of JAand TJmax, with TJ= TA+ (JAx PD). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90815 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 R

19、EVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardizatio

20、n Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applica

21、ble laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (

22、QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, an

23、d physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Termi

24、nal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table

25、 I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN li

26、sted in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this

27、option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V sha

28、ll be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to

29、 supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to

30、listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A cert

31、ificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of

32、change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90815 DEFENSE

33、SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C VS= 15 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Supply current ISRL= 1 01 8 18 m

34、A 2,3 8 20 VS= 2.5 V, RL= 1 4 16 2,3 4 18 Output offset voltage VOORL= 1 k 1 01 -30 +30 mV 2,3 -50 +50 Power supply rejection ratio PSRR VS= 5 V to 15 V 1 01 60 130 dB 2,3 55 130 Input bias current IIBRS= 10 k, RL= 1 k 1 01 -4 +4 A 2,3 -7 +7 Positive voltage gain +AVVS= 2.5 V, RL= 50 , VIN= 1 V 1 01

35、 0.78 1 V/V VS= 2.5 V, RL= 50 , VIN= +0.75 V 2,3 0.75 1 RL= 1 k, VIN= 10 V 1 0.98 1 2,3 0.97 1 RL= 50 , VIN= 10 V 1 0.86 1 2,3 0.80 1 Negative voltage gain -AVVS= 2.5 V, RL= 50 , VIN= -1 V 1 01 0.78 1 V/V VS= 2.5 V, RL= 50 , VIN= -0.75 V 2,3 0.75 1 RL= 1 k, VIN= -10 V 1 0.98 1 2,3 0.97 1 RL= 50 , VI

36、N= -10 V 1 0.86 1 2,3 0.80 1 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90815 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 6 DSCC FORM 22

37、34 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TA +125C VS= 15 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Positive voltage swing +VOPRL= 1 k, VIN= 14 V 1 01 13.3 14 V 2,3 13 14 RL= 100 , VIN= 14 V 1 11.5 14 2,3 10

38、14 RL= 50 , VIN= 14 V 1 11 14 2,3 9 14 RL= 50 , VS= 2.5 V, 1 0.8 1.5 VIN= 1 V 2,3 0.55 1.5 Negative voltage swing -VOPRL= 1 k, VIN= -14 V 1 01 -14 -13.3 V 2,3 -14 -13 RL= 100 , VIN= -14 V 1 -14 -11.5 2,3 -14 -10 RL= 50 , VIN= -14 V 1 -14 -11 2,3 -14 -9 RL= 50 , VS= 2.5 V, 1 -1.5 -0.8 VIN= -1 V 2,3 -

39、1.5 -0.55 FLAG pin output high current IOHVS/D= 0 V, 1 01 -10 +10 A VFLAG= 15 V 2,3 -25 +25 Shutdown pin trip point high VIH1,2,3 01 2 V Shutdown pin trip point low VIL1,2,3 01 0.8 FLAG pin output low voltage VFLISINKat 1/ 1 01 300 mV FLAG pin = 500 A 2,3 400 See footnotes at end of table. Provided

40、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90815 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued.

41、Test Symbol Conditions -55C TA +125C VS= 15 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Positive output current in shutdown +IOVS/D= 0 V, VOUT= +5 V 1 01 -50 +50 A 2,3 -2000 +2000 Negative output current in shutdown -IOVS/D= 0 V, VOUT= -5 V 1 01 +50 -50 A 2,3 +2000

42、 -2000 Positive supply current in shutdown +ISRL= , VIN= 0 V, 1 01 0 1.5 mA +VS= +15 V, VS/D= 0 V, VFLAG= +20 V 2,3 0 2.0 Negative supply current in shutdown -ISRL= , VIN= 0 V, 1 01 -1.5 0 mA -VS= -15 V, VS/D= 0 V, VFLAG= +20 V 2,3 -2.0 0 Input bias current of shutdown pin IILRL= 1 k, VS/D= 0 V, 1 0

43、1 -10 +10 A VFLAG= OPEN, RS= 10 k 2,3 -20 +20 IIHRL= 1 k, VS/D= 5 V, 1 -10 +10 VFLAG= OPEN, RS= 10 k 2,3 -20 +20 Output resistance ROVIN= 2 V, VS/D= 5 V, 1 01 0 5 VFLAG= OPEN, IOUT= +10 mA 2,3 0 10 VIN= -2 V, VS/D= 5 V, 1 0 5 VFLAG= OPEN, IOUT= -10 mA 2,3 0 10 -3 dB bandwidth BW RL= 50 , CL 10 pF, V

44、IN= 100 mVPP4,5,6 01 30 MHz See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90815 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 8 DSCC FORM 223

45、4 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TA +125C VS= 15 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Positive slew rate +SR RL= 50 , VIN= 11 V, 4 01 550 V/s measured at VOUT= -5 V to +5 V, AV= 0.9 5,6 250 Negat

46、ive slew rate -SR RL= 50 , VIN= 11 V, 4 01 550 V/s measured at VOUT= +5 V to -5 V, AV= 0.9 5,6 250 1/ FLAG is set (low) during current limit or thermal fault detection in addition to being set by the S/D pin. It is an open-collector output which requires an external pullup resistor. 3.9 Verification

47、 and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit grou

48、p assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modificatio

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1