DLA SMD-5962-90831 REV A-2007 MICROCIRCUIT MEMORY DIGITAL CMOS 8K X 8-BIT REGISTERED DIAGNOSTIC PROM MONOLITHIC SILICON《硅单块 互补金属氧化物半导体8K X 8比特记名诊断的可程序化只读存储器 数字主储存器微型电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Boilerplate update and part of five year review. tcr 07-02-02 Joseph Rodenbeck REV SHET REV A A A A A SHEET 15 16 17 18 19 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gary L. Gr

2、oss DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Ray Monnin COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, MEMORY, DIGITAL, CMOS 8K X 8-BIT REGISTERED DIAGNOSTIC PROM, MONOLITH

3、IC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-01-13 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-90831 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E195-07 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD

4、MICROCIRCUIT DRAWING SIZE A 5962-90831 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (

5、device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 90831 01

6、 M X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels a

7、nd are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit functi

8、on as follows: Device type Generic number Circuit function Access time 01 7C269 8K X 8-bit registered diagnostic PROM 60 ns 02 7C269 8K X 8-bit registered diagnostic PROM 50 ns 03 7C269 8K X 8-bit registered diagnostic PROM 25 ns 04 7C269 8K X 8-bit registered diagnostic PROM 18 ns 1.2.3 Device clas

9、s designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38

10、535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDIP3-T28 or GDIP4-T28 28 Dual-in-line package Y GDFP2-F28 28 Flat pack

11、age 3 CQCC1-N28 28 Square leadless chip carrier package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-ST

12、ANDARD MICROCIRCUIT DRAWING SIZE A 5962-90831 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range to ground potential (VCC). -0.5 V dc to +7.0 V dc DC voltage applied to the outputs in the high

13、Z state -0.5 V dc to +7.0 V dc DC input voltage . -3.0 V dc to +7.0 V dc DC program voltage 13.0 V dc Maximum power dissipation 1.0 W 2/ Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC). See MIL-STD-1835 Junction temperature (TJ). +175C Storage temperature ran

14、ge (TSTG) -65C to +150C Temperature under bias -55C to +125C Data retention . 10 years, minimum 1.4 Recommended operating conditions. Supply voltage range (VCC) . +4.5 V dc minimum to +5.5 V dc maximum Ground voltage (GND) 0 V dc Input high voltage (VIH) 2.0 V dc minimum Input low voltage (VIL) 0.8

15、V dc maximum Case operating temperature range (TC) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues

16、of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard E

17、lectronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the

18、Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Must withstand the

19、 added PDdue to short circuit test e.g.; IOS. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90831 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2.2

20、Non-Government publications. The following documents form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-0

21、0 - Standard Guide for the Measurement of Single Event Phenomena (SEP) induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.

22、astm.org.) ELECTRONICS INDUSTRIES ALLIANCE (EIA) JEDEC Standard EIA/JESD 78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industries Alliance, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are

23、normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, th

24、e text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF

25、-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appe

26、ndix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class

27、 M. 3.2.1 Case outlines. The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.3.1 Unprogrammed devices. The truth table for unpro

28、grammed devices for contracts involving no altered item drawing shall be as specified on figure 2. When required in groups A, B, C, or D (see 4.4), the devices shall be programmed by the manufacturer prior to test with a checkerboard pattern or equivalent (a minimum of 50 percent of the total number

29、 of bits programmed) or to any altered item drawing pattern which includes at least 25 percent of the total number of bits programmed. 3.2.3.2 Programmed devices. The truth table for programmed devices shall be as specified by an attached altered item drawing. Provided by IHSNot for ResaleNo reprodu

30、ction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90831 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limits Test Symbol Conditions -55C TC +1

31、25C 4.5 V VCC 5.5 V unless otherwise specified Group A subgroupsDevice type Min Max Unit IOH= -4 mA 01,02 Output high voltage VOHVCC= 4.5 V, VIN= VIH, VIL IOH= -2 mA 1,2,3 03,04 2.4 V IOL= 8 mA 01,02 Output low voltage VOLVCC= 4.5 V, VIN= VIH, VILIOL= 6 mA 1,2,3 03,04 0.4 V Input high voltage 1/ VIH

32、1,2,3 All 2.0 V Input low voltage 1/ VIL1,2,3 All 0.8 V Input leakage current IIXVIN= VCCto GND 1,2,3 All -10 10 A Output leakage current IOZVOUT= VCCto GND 1,2,3 All -40 40 A Output short circuit current 2/ 3/ IOSVCC= 5.5 V, VOUT= GND 1,2,3 All -90 mA 01 100 02 120 Power supply current ICCVCC= 5.5

33、V, IOUT= 0 mA, VIN= 0 to 3.0 V, f = fMAX 4/ 1,2,3 03,04 140 mA Input capacitance 3/ CINVCC= 5.0 V, VIN= 0 V, TA= +25C, f = 1 MHz (see 4.4.1c) 4 All 10 pF Output capacitance 3/ COUTVCC= 5.0 V, VOUT= 0 V, TA= +25C, f = 1 MHz (see 4.4.1c) 4 All 10 pF Functional tests see 4.4.1d 7,8 All See footnotes at

34、 end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90831 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance cha

35、racteristics - continued. Limits Test Symbol Conditions -55C TC +125C 4.5 V VCC 5.5 V unless otherwise specified Group A subgroupsDevice type Min Max Unit 01 60 02 50 03 25 Address setup to clock tSA9, 10, 11 04 18 ns Address hold from clock tHA9, 10, 11 All 0 ns 01,02 25 03 20 Clock to output valid

36、 tCO9, 10, 11 04 15 ns 01,02 20 Clock pulse width tPW9, 10, 11 03,04 15 ns ESsetup to clock (Synch. Enable only) tSES9, 10, 11 All 15 ns EShold from clock tHES9, 10, 11 All 5 ns 01,02 35 03 25 INITto output valid 3/ tDI 9, 10, 11 04 18 ns 01,02 25 03 20 INIT recovery to clock 3/ tRI9, 10, 11 04 15 n

37、s 01,02 35 03 25 INIT pulse width 3/ tPWISee figures 3 and 4 5/ 9, 10, 11 04 18 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90831 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,

38、 OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Limits Test SymbolConditions -55C TC +125C 4.5 V VCC 5.5 V unless otherwise specified Group A subgroupsDevice type Min Max Unit 01,02 25 03 20 Output inactive from clock (sync

39、hronous mode) 3/ 6/ tHZS9, 10, 11 04 15 ns 01,02 25 03 20 Output inactive from E high (Asynchronous mode) 3/ 6/ tHZE9, 10, 11 04 15 ns 01,02 25 03 20 Output valid from clock (synchronous mode) tCOS9, 10, 11 04 15 ns 01,02 25 03 20 Output valid from E low (Asynchronous mode) 3/ tDOE9, 10, 11 04 15 ns

40、 01,02 35 03 30 Setup SDI to clock tSSDI9, 10, 11 04 25 ns SDI hold from clock tHSDI9, 10, 11 All 0 ns 01,02 40 03 30 SDO delay from clock tDSDO 9, 10, 11 04 25 ns Minimum clock low tDCL9, 10, 11 All 25 ns Minimum clock high tDCH9, 10, 11 All 25 ns 01-03 30 Setup to mode change 3/ tSMSee figures 3 a

41、nd 4 5/ 9, 10, 11 04 25 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90831 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 AP

42、R 97 TABLE I. Electrical performance characteristics - continued. Limits Test SymbolConditions -55C TC +125C 4.5 V VCC 5.5 V unless otherwise specified Group A subgroupsDevice type Min Max Unit Hold from mode change tHM9, 10, 11 All 0 ns 01-03 30 Mode to SDO tMS9, 10, 11 04 25 ns 01,02 45 03 40 SDI

43、to SDO tSS9, 10, 11 04 35 ns 01-03 30 Data setup to DCLK 3/ tSO9, 10, 11 04 25 ns 01,02 15 Data hold from DCLK 3/ tHOSee figures 3 and 4 5/ 9, 10, 11 03,04 13 ns 1/ These are absolute values with respect to device ground and all overshoots and undershoots due to system or tester noise are included.

44、2/ For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds. 3/ Tested initially and after any design or process changes that affect that parameter, and therefore shall be guaranteed to the limits specified in table I. 4/ At f

45、= fmax, address inputs are cycling at the maximum frequency of 1/tSA. 5/ AC tests are performed with input rise and fall times of 5 ns or less, timing reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and the output load on figure 3. 6/ Transition is measured at steady-state high level -5

46、00 mV or steady-state low level +500 mV on the output from the 1.5 V level on the input, CL= 5 pF (including scope and jig). See figure 3. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90831 DEFENSE SUPPLY

47、CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 9 DSCC FORM 2234 APR 97 FIGURE 1. Terminal connections. Device Types All Case Outlines X,Y,3 Terminal number Terminal symbol 1 A72 A63 A54 A45 A36 A27 MODE 8 CLK 9 A110 A011 O012 O113 O214 GND 15 O316 O417 O518 O619 O720 SDO 21 SDI 22

48、E / ES,I 23 A1224 A1125 A1026 A927 A828 VCCProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90831 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 10 DSCC FORM 2234 APR 97 Read modes NOTES: 1. X = VIHor VILbut not to exceed VCC. FIGURE 2. Truth table. Pin Functions Mode A0-A12MODE CLK