DLA SMD-5962-90925 REV B-2010 MICROCIRCUIT LINEAR HIGH SPEED OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Under paragraph 1.3, delete the PDlimit of 230 mW and substitute 1.2 W. Make changes to the IOUT, VOUT, SSBW, LPD, GFPL, GFPH, GFR, HD2, HD3, SNF, and INV tests as specified under Table I. Changes in accordance with NOR 5962-R165-93. 93-06-07 M.

2、A. FRYE B Update boilerplate paragraphs to current MIL-PRF-38535 requirements. Redrawn. - ro 10-01-25 C. SAFFLE THE FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY RICK C. OFFICER

3、DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY CHARLES E. BESORE APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, HIGH SPEED, OPER

4、ATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 92-01-21 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-90925 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E137-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DR

5、AWING SIZE A 5962-90925 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V)

6、. A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 90925 01 M C A Federal s

7、tock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked wit

8、h the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: De

9、vice type Generic number Circuit function 01 CLC500 High speed output clamping operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certific

10、ation to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter De

11、scriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted w

12、ithout license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90925 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) . 7 V dc Output current (IOUT) 70 mA Power dissipation (PD) 1.2 W J

13、unction temperature (TJ) . +175C Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) 75C/W 1.4 Recommended operating conditions. Supply voltage (VS) . 5 V dc

14、 Gain range (AV) 1 to 10 Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specifi

15、ed, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Inter

16、face Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardizati

17、on Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applic

18、able laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or

19、networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90925 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V

20、 shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in

21、 accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, ap

22、pendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless other

23、wise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in

24、 table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations,

25、the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, a

26、ppendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q

27、and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of su

28、pply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device clas

29、s M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this dr

30、awing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M,

31、 DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M dev

32、ices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90925 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218

33、-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA+125C Group A subgroups Device type Limits 2/ Unit unless otherwise specified Min Max Open loop characteristics Input bias current +IINRS= 50 1 01 25 A (noninverting

34、) 2 35 3 45 Input bias current -IINRS= 50 1 01 30 A (inverting) 2 40 3 50 Input offset voltage VIORS= 50 1 01 2.5 mV 2 4.0 3 3.7 Average +input bias current drift TC3/ 2 01 100 nA/C (+IIN) 3 250 Average -input bias current drift TC3/ 2 01 100 nA/C (-IIN) 3 250 Average offset voltage drift TC(VIO) 3/

35、 2,3 01 15 V/C Supply current ICCNo load 1,2,3 01 23 mA Output current IOUT3/ 1,2 01 45 mA 3 25 Power supply rejection ratio PSRR +VS= +4.5 V to +5.0 V, 1,2 01 60 dB -VS= -4.5 V to -5.0 V 3 55 Input resistance +RIN3/ 1,2 01 85 k 3 50Output impedance (dc) ROUT3/ 1,2,3 01 0.2 See footnotes at end of t

36、able. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90925 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characterist

37、ics Continued. Test Symbol Conditions 1/ -55C TA+125C Group A subgroups Device type Limits 2/ Unit unless otherwise specified Min Max Open loop characteristics continued. Common mode rejection ratio CMRR VCM= 1 V 4/ 4,5 01 60 dB 6 55Input capacitance CINSee 4.4.1c, TA= +25C 4 01 5.5 pF Output voltag

38、e swing VOUTRL= 100 4/ 4,5,6 01 2.4 V Closed loop ac characteristics Small signal bandwidth SSBW -3 dB bandwidth, 4 01 110 MHz VOUT 0.5 VPP5,6 3/ 100 Large signal bandwidth LSBW -3 dB bandwidth, 3/ VOUT 5 VPP4,5,6 01 40 MHz Linear phase deviation LPD 0.1 MHz to 50 MHz, 3/ 4 01 1.0 VOUT 2.0 VPP5,6 1.

39、2 Gain flatness peaking low GFPL 0.1 MHz to 25 MHz, 4 01 0.3 dB VOUT 0.5 VPP5,6 3/ 0.4 Gain flatness peaking high GFPH 25 MHz, 4 01 0.5 dB VOUT 0.5 VPP5,6 3/ 0.7 Gain flatness rolloff GFR 0.1 MHz to 50 MHz, 4 01 1.0 dB VOUT 0.5 VPP5,6 3/ 1.0 See footnotes at end of table. Provided by IHSNot for Resa

40、leNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90925 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Condit

41、ions 1/ -55C TA+125C Group A subgroups Device type Limits 2/ Unit unless otherwise specified Min Max Distortion 2nd harmonic distortion HD2 2 VPPat 20 MHz, 4 01 -45 dBc VOUT= 2 VPP5 3/ -45 6 3/ -40 3rd harmonic distortion HD3 2 VPPat 20 MHz, 4 01 -50 dBc VOUT= 2 VPP5,6 3/ -50 Noise floor 1 MHz SNF 3

42、/ 5/ 4,5,6 01 -155dBm (1 Hz) Integrated noise 1 MHz to 150 MHz INV 3/ 5/ 4,5,6 01 49 V Clamp characteristics Clamp accuracy VOC 1,2,3 01 0.3 V Input bias current on VHIGHand VLOWICL 3/ 1,2 01 50 A 3 100 Clamp voltage range CMC 3/ 1,2 01 3.3 V 3 3.0 Overshoot in clamp OVC TA= +25C 3/ 4 01 10 % Overlo

43、ad recovery from clamp TSO 3/ 9,10,11 01 15 ns See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90925 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SH

44、EET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA+125C Group A subgroups Device type Limits 2/ Unit unless otherwise specified Min Max Time domain response Slew rate SR AV= +2, VOUT= 3 V, 3/ measured at -1 V to +1 V, RS= 50 , CL

45、10 pF 4,5,6 01 500 V/s Rise and fall time TRS 0.5 V step, 3/ 9 01 3.2 ns RS= 50 , CL 10 pF 10,11 3.5 TRL 5 V step, 3/ RS= 50 , CL 10 pF 9,10,11 01 8.0 Settling time TSP 2 V step at 0.01% of the 3/ fixed value, RS= 50 , CL 10 pF 9,10,11 01 25 ns TSS2 V step at 0.1% of the 3/ fixed value, RS= 50 , CL

46、10 pF 15 Overshoot OS 0.5 V step, 3/ RS= 50 , CL 10 pF 9,10,11 01 10 % 1/ Unless otherwise specified, VS= 5 V dc, load resistance (RL) = 100 , AV= +2, feedback resistance (RF) = 250 , and gain settling resistance (RG) = 250 . 2/ The limiting terms “min” (minimum) and “max” (maximum) shall be conside

47、red to apply magnitudes only. Negative current shall be defined as conventional current flow out of a device terminal. 3/ If not tested, shall be guaranteed to the limits specified in table I herein. 4/ Group A sample tested only. 5/ Noise tests are performed from 1 MHz to 150 MHz. Provided by IHSNo

48、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90925 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 9 DSCC FORM 2234 APR 97 Device type 01 Case outline C Terminal number Terminal symbol 1 VHIGH(see note 1) 2 NC 3 -INPUT 4 NC 5 +INPUT 6 NC 7 -VS8 VLOW(see note 1) 9 -VS(see note 2) 10 NC 11 VO