DLA SMD-5962-90955 REV C-2013 MICROCIRCUIT LINEAR WIDEBAND LOGARITHMIC AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. - ro 01-07-25 R. MONNIN B Drawing updated as part of 5 year review. -rrp 06-12-06 R. MONNIN C Update drawing to current MIL-PRF-38535 requirements. -rrp 13-08-14 C. SAFFLE THE ORIGINAL FIRST SHEET

2、OF THIS DRAWING HAS BEEN REPLACED. REV SHEET REV SHEET REV STATUS REV C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY JOSEPH A. KERBY DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVA

3、ILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY CHARLES E. BESORE APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, WIDEBAND LOGARITHMIC AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 91-09-05 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-90955 SHE

4、ET 1 OF 11 DSCC FORM 2233 APR 97 5962-E506-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90955 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1

5、Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice

6、 of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 90955 01 M R A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.

7、5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked w

8、ith the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 AD640 DC coupled demodulating 120 MHz, logarithmic amplifier 1.2.3 Device class designator. The

9、 device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q

10、 or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5

11、 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90955 DLA LAND AND MA

12、RITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) . 7.5 V Input voltage (SIG IN and SIG +IN pins to CKT COM pin) -3.0 V to +300 mV Attenuator input voltage (ATN IN pin to ATN COM pins) . 3.0 V Storage temperature rang

13、e -65C to +150C Lead temperature (soldering, 60 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) . 95C/W 1.4 Recommended operating conditions. Supply voltage range (VS) . 4.5 V to 7.5 V Ambient operating temperature range (TA) .

14、 -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitati

15、on or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEF

16、ENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-

17、5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ St

18、resses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING

19、SIZE A 5962-90955 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the dev

20、ice manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifie

21、d herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in a

22、ccordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Block diagram. The block diagram shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified h

23、erein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The e

24、lectrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer

25、 has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1

26、 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certifi

27、cate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK

28、-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device cla

29、ss M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this d

30、rawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. F

31、or device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit gro

32、up assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90955

33、 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C VS= 5 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Total absolute dc accuracy TAVIN=

34、 1.0 mV to 100 mV 1 01 -0.9 +0.9 dB 2,3 -1.8 +1.8 VIN= 0.75 mV to 200 mV 4 -2.0 +2.0 VIN= 10 mV to 1.0 V 1 -1.5 +1.5 using attenuator 2,3 -2.0 +2.0 VIN= 7.5 mV to 2.0 V using attenuator 4 -2.5 +2.5 VIN= 1 mV to 100 mV, VS= 4.5 V to 7.5 V, TA= +25C 4 -1.0 +1.0 DC linearity LEdcVIN= 1 mV to 100 mV, TA

35、= +25C 1 01 -0.6 +0.6 dB Input offset voltage VIODifferential, VIN= 1 mV 1 01 -200 +200 V 2,3 -300 +300 Input bias current 1/ IIBVIN= 0 V, differential TA= +25C 4 01 -25 +25 A Slope current versus supplies IYdcFrom nominal of 1.00 mA 1,2,3 01 -0.02 +0.02 mA VS= 4.5 V to 7.5 V, TA= +25C 4 -0.4 +0.4 %

36、/V Intercept voltage VXdcFrom nominal of 1.00 mV 1 01 -0.05 +0.05 mV 2,3 -0.1 +0.1 From nominal of 10.0 mV using attenuator 1 -1.0 +1.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE

37、A 5962-90955 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TA +125C VS= 5 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max Application

38、 resistors RAFrom nominal of 100 , TA= +25C 4 01 -5 +5 AC linearity 1/ LEacf = 1.0 MHz, TA= +25C, -40 dBm to 2.0 dBm 4 01 -1.0 +1.0 dB f = 1.0 MHz, TA= +25C, -35 dBm to 10 dBm -0.5 +0.5 f = 1.0 MHz, TA= +25C, -75 dBm to 0 dBm, cascaded operation -1.5 +1.5 f = 1.0 MHz, TA= +25C, -70 dBm to 10 dBm, ca

39、scaded operation -1.0 +1.0 AC slope current 1/ IYacFrom nominal of 1.00 mA, f 1.0 MHz, TA= +25C 4 01 -0.02 +0.02 mA From nominal of 0.94 mA, f = 30 MHz, TA= +25C -0.03 +0.03 From nominal of 0.90 mA, f = 60 MHz, TA= +25C -0.04 +0.04 AC intercept voltage 1/ VXacFrom nominal of 88.6 dBm, f 1.0 MHz, TA=

40、 +25C 4 01 -1.0 1.0 dBm Supply current +ISVIN= 0 V 1,2,3 01 -15 mA -IS+60 1/ If not tested, shall be guaranteed to the limits specified in table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90955

41、 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outlines R, 2 Terminal number Terminal symbol 1 SIG IN 2 ATN LO 3 ATN COM 4 ATN COM 5 ATN IN 6 BL1 7 -VS8 ITC 9 BL2 10 SIG -OUT 11 SIG +OUT 12 +VS13 LOG COM 14 LOG OUT 15 RG2 16 RG0 17

42、 RG1 18 CKT COM 19 ATN OUT 20 SIG +IN FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90955 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2

43、234 APR 97 FIGURE 2. Block diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-90955 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 9 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sam

44、pling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For

45、 device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspectio

46、n. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition B or D. The test circu

47、it shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified

48、in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the d