DLA SMD-5962-90985 REV D-2013 MICROCIRCUIT DIGITAL ADVANCED CMOS RADIATION HARDENED 8-BIT MAGNITUDE COMPARATOR WITH ENABLE MONOLITHIC SILICON.pdf

1、REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing converted to new format. Change to table IA. Add RHA data. Editorial changes throughout. 93-02-08 Monica L. Poelking B Add section 1.5, radiation features. Update the boilerplate in accordance with MIL-PRF-38535 requirements. Editorial cha

2、nges throughout. TVN 04-11-08 Thomas M. Hess C Add device type 03. Add device Class V criteria. Add radiation hardened assurance features in section 1.5 and SEP limits in table IB. Update boilerplate paragraphs to the current requirements as specified in MIL-PRF-38535. - jak 10-02-17 Thomas M. Hess

3、D Update case outline X for flat pack dimension A and add dimensions E2 and E3 to figure 1. Update paragraphs 4.2.1-4.2.3. - MAA 13-12-09 Thomas M. Hess REV SHEET REV D D D D D D D D SHEET 15 16 17 18 19 20 21 22 REV STATUS OF SHEETS REV D D D D D D D D D D D D D D SHEET 1 2 3 4 5 6 7 8 9 10 11 12 1

4、3 14 PMIC N/A PREPARED BY Larry T. Gauder DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil/ STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thomas J. Ricciuti APPROVED BY

5、 Monica L. Poelking MICROCIRCUIT, DIGITAL, ADVANCED CMOS, RADIATION HARDENED, 8-BIT MAGNITUDE COMPARATOR WITH ENABLE, MONOLITHIC SILICON DRAWING APPROVAL DATE 92-02-13 REVISION LEVEL D SIZE A CAGE CODE 67268 5962-90985 SHEET 1 OF 22 DSCC FORM 2233 APR 97 5962-E460-13Provided by IHSNot for ResaleNo r

6、eproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-90985 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of

7、high reliability (device classes B, Q, and M) and space application (device classes S and V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the

8、 PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 90985 01 S R A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device cl

9、asses B, S, Q, and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a

10、 non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54AC521 8-bit magnitude comparator with enable 02 54AC11521 8-bit magnitude comparator with enable 03 54AC521 Radiation hardened 8-bit magnitude comparat

11、or with enable 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircui

12、ts in accordance with MIL-PRF-38535, appendix A B, S, Q, or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style R GDIP1-T20 or CDIP2-T20 20 Dual-i

13、n-line S GDFP2-F20 or CDFP3-F20 20 Flat pack X See figure 1 20 Flat pack 2 CQCC1-N20 20 Leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes B, S, Q, and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reprodu

14、ction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-90985 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +6.0 V dc DC input

15、voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc Clamp diode current (IIK, IOK) . 20 mA DC output current (IOUT) . 50 mA DC VCCor GND current (ICC, IGND) . 100 mA Maximum power dissipation (PD) 500 mW Storage temperature range (TSTG) . -65C

16、to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) 175C 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) +3.0 V dc to +5.5 V dc Input voltage range (VIN) 0.0 V dc to VCCOutput voltage ra

17、nge (VOUT). 0.0 V dc to VCCMinimum high level input voltage (VIH): VCC= 3.0 V 2.10 V VCC= 4.5 V 3.15 V VCC= 5.5 V 3.85 V Maximum low level input voltage (VIL): VCC= 3.0 V 0.90 V VCC= 4.5 V 1.35 V VCC= 5.5 V 1.65 V Maximum high level output current (IOH): VCC= 3.0 V -4 mA VCC= 4.5 V -24 mA Maximum lo

18、w level output current (IOL): VCC= 3.0 V +12 mA VCC= 4.5 V +24 mA Maximum input rise or fall time rate (t/v): VCC= 3.6 V, VCC= 5.5 V 8 ns/V Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features. Device type 01: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 100

19、krads (Si) Single event phenomenon (SEP): No SEL at effective LET (see 4.4.5.4). 100 MeV-cm2/mg Device type 03: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 300 krads (Si) Single event phenomenon (SEP): No SEL at effective LET (see 4.4.5.4). 110 MeVcm2/mg 1/ Stresses above the absol

20、ute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. The maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004

21、 of MIL-STD-883. 2/ Unless otherwise specified, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. Provided by IHSNot for ResaleNo reproduction or networking permitted without

22、 license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-90985 REVISION LEVEL D SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks f

23、orm a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFEN

24、SE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are av

25、ailable online at http:/quicksearch.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specif

26、ied, the issues of these documents are those cited in the solicitation or contract. JEDEC SOLID STATE TECHNOLOGY ASSOCIATION (JEDEC) JESD20 - Standard for Description of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Speed CMOS Devices. (Copies of these documents are available online at http:/www.jedec.

27、org or from JEDEC Solid State Technology Association, 3103 North 10th Street, Suite 240S, Arlington, VA 22201.) ASTM INTERNATIONAL (ASTM) ASTM F1192- Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of this document

28、 is available online at http:/www.astm.org/ or from ASTM International, P. O. Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959). (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents m

29、ay also be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable law

30、s and regulations unless a specific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-90985 REVISION LEVEL D SHEET 5 DSCC FORM 2234 A

31、PR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes B, S, Q, and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect

32、the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physic

33、al dimensions shall be as specified in MIL-PRF-38535 and herein for device classes B, S, Q, and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be

34、 as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.2.6 Rad

35、iation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unle

36、ss otherwise specified herein, the electrical performance characteristics and post irradiation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups speci

37、fied in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limi

38、tations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes B, S, Q, and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with

39、MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes B, S, Q, and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance

40、. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as a

41、n approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL

42、-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes B, S, Q, and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with

43、 each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.

44、9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at th

45、e option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

46、STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-90985 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE IA. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ 3/ -55C TC +125C +3.0 V VCC +5.5 V unless oth

47、erwise specified Device type and device class VCCGroup A subgroups Limits 4/ Unit Min Max High level output voltage 3006 VOH15/ For all inputs affecting output under test, VIN= VIH=2.10 V or VIL= 0.90 V For all other inputs, VIN= VCCor GND IOH= -50 A All All 3.0 V 1, 2, 3 2.9 V VOH25/ For all inputs

48、 affecting output under test, VIN= VIH= 3.15 V or VIL=1.35 V For all other inputs, VIN= VCCor GND IOH= -50 A All All 4.5 V 1, 2, 3 4.4 V VOH36/ 7/ For all inputs affecting output under test, VIN= VIH= 3.85 V or VIL=1.65 V For all other inputs, VIN= VCCor GND IOH= -50 A All All 5.5 V 1, 2, 3 5.4 V VOH45/ For all inputs affecting output under test, VIN= VIH=2.10 V or VIL= 0.90 V For all other inputs, VIN= VCCor GND IOH= -4 mA 01, 02 All 3.0 V 1, 2, 3 2.4 V 03 All 3.0 V 1 2.56 V 03 All 3.0 V 2, 3 2.4 V VOH56/ 7/ For all inputs affecting output under test, VIN= VIH= 3.