DLA SMD-5962-92004 REV D-2008 MICROCIRCUIT LINEAR OPERATIONAL AMPLIFIER WIDEBAND LOW POWER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make limit changes to the +IO, -IO, and +VOtests as specified under Table I in accordance with N.O.R. 5962-R021-94. 93-11-05 M. A. FRYE B Under the CMRR test, delete 4/ and substitute 3/ as specified under Table I in accordance with N.O.R. 5962-R

2、009-95. 94-10-14 M. A. FRYE C Drawing updated to reflect current requirements. Redrawn. - ro 00-11-07 R. MONNIN D Replace reference to MIL-STD-973 with reference to MIL-PRF-38535. - ro 08-12-04 R. HEBER REV SHET REV SHET REV STATUS REV D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PM

3、IC N/A PREPARED BY DAN WONNELL CHECKED BY CHARLES E. BESORE DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY MICHAEL A. FRYE STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING

4、 APPROVAL DATE 93-02-03 MICROCIRCUIT, LINEAR, OPERATIONAL AMPLIFIER, WIDEBAND, LOW POWER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-92004 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E502-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without licen

5、se from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92004 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M

6、) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following

7、example: 5962 - 92004 01 M P A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-3853

8、5 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) ide

9、ntify the circuit function as follows: Device type Generic number Circuit function 01 CLC406 Operational amplifier, wideband, low power 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements d

10、ocumentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-183

11、5 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device cla

12、ss M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92004 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply volt

13、age (VCC) 7 V dc Common mode input voltage (VCM) VCCDifferential input voltage +10 V dc Output current (IO) 70 mA Power dissipation (PD) 1.2 W Junction temperature (TJ) . +175C Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-ca

14、se (JC) . 28C/W Thermal resistance, junction-to-ambient (JA) 100C/W 1.4 Recommended operating conditions. Supply voltage (VCC) 5 V dc Gain range 1 to 10 Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The follow

15、ing specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, G

16、eneral Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircui

17、t Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing a

18、nd the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended o

19、peration at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92004 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D S

20、HEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan s

21、hall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construc

22、tion, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections

23、 shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient op

24、erating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufac

25、turers PIN may also be marked. For packages where marking of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes

26、Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for de

27、vice class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device cl

28、ass M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that th

29、e manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-3853

30、5 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing

31、 is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made

32、available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted withou

33、t license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92004 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A s

34、ubgroups Device type Limits 2/ Unit Min Max IBN1,2 01 -12 +12 A Input bias current, noninverting 3 -24 +24 DIBN 3/ 2 01 -50 +50 nA/C Input bias current, average temperature coefficient, noninverting 3 -125 +125 IBI1 01 -15 +15 A Input bias current, inverting 2 -20 +20 3 -23 +23 DIBI 3/ 2 01 -50 +50

35、nA/C Input bias current, average temperature coefficient, inverting 3 -100 +100 Input offset voltage VIO1 01 -6 +6 mV 2 -12 +12 3 -10 +10 Input offset voltage, average temperature coefficient DVIO3/ 2,3 01 -60 +60 V/C Supply current ICCNo load 1,2 01 6.0 mA 3 6.4 PSRR -VCC= -4.5 V to 5.0 V, 1,3 01 4

36、6 dB Power supply rejection ratio +VCC= +4.5 V to +5.0 V 2 44 Output current +IO3/ 1,2 01 +45 mA 3 +25 -IO3/ 1,2 -45 3 -25 Output voltage range +VO4/ 1,2 01 +2.7 V 3 +2.0 -VO4/ 1,2 -2.7 3 -2.5 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without

37、 license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92004 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified

38、Group A subgroups Device type Limits 2/ Unit Min Max RIN3/ 1,2 01 500 k Noninverting input resistance 3 300 CMRR 3/ VCM= 1.0 V 4,6 01 45 dB Common mode rejection ratio 5 43 Small signal bandwidth SSBW -3 dB bandwidth, 4,6 01 110 MHz VOUT25 MHz, VOUT1 MHz 4,6 01 3.4 nV / Equivalent input noise, nonin

39、verting voltage 5 3.8 Hz ICN 3/ 1 MHz 4,6 01 13.9 pA / Equivalent input noise, inverting current 5 15.5 Hz NCN 3/ 1 MHz 4,6 01 2.6 pA / Equivalent input noise, noninverting current 5 3.0 Hz SNF 3/ 1 MHz 4,6 01 -156 dBm Equivalent input noise, total noise floor 5 -155 1 Hz INV 3/ 1 MHz to 100 MHz 4,6

40、 01 38 V Equivalent input noise, total integrated noise 5 42 1/ Unless otherwise specified, RL= 100 , VCC= 5 V dc, AV= +6, feedback resistor (RF) = 500 , and gain resistor (RG) = 100 . 2/ The algebraic convention, whereby the most negative value is a minimum and the most positive is a maximum, is us

41、ed in this table. Negative current shall be defined as conventional current flow out of a device terminal. 3/ Guaranteed, if not tested to the limits specified in table I herein. 4/ This parameter is group A sample tested only and is excluded from the final electrical testing, but is guaranteed to t

42、he limits specified.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92004 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 8 DSCC FORM 2234 APR 97 Device type 01 Case outlines P

43、 2 Terminal number Terminal symbol 1 NC NC 2 VINVNC 3 VNONINVNC 4 -VCCNC 5 NC NC 6 VOUTVINV7 +VCCNC 8 NC VNONINV9 - -VCC10 - NC 11 - NC 12 - NC 13 - NC 14 - VOUT15 - NC 16 - +VCC17 - NC 18 - NC 19 - NC 20 - NC NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reprodu

44、ction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92004 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 9 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and ins

45、pection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in ac

46、cordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with metho

47、d 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition B. The test circuit shall be maintained by the manufacturer under document revision leve

48、l control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives