ImageVerifierCode 换一换
格式:PDF , 页数:10 ,大小:51.11KB ,
资源ID:700104      下载积分:10000 积分
快捷下载
登录下载
邮箱/手机:
温馨提示:
快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。 如填写123,账号就是123,密码也是123。
特别说明:
请自助下载,系统不会自动发送文件的哦; 如果您已付费,想二次下载,请登录后访问:我的下载记录
支付方式: 支付宝扫码支付 微信扫码支付   
验证码:   换一换

加入VIP,免费下载
 

温馨提示:由于个人手机设置不同,如果发现不能下载,请复制以下地址【http://www.mydoc123.com/d-700104.html】到电脑端继续下载(重复下载不扣费)。

已注册用户请登录:
账号:
密码:
验证码:   换一换
  忘记密码?
三方登录: 微信登录  

下载须知

1: 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。
2: 试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。
3: 文件的所有权益归上传用户所有。
4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
5. 本站仅提供交流平台,并不能对任何下载内容负责。
6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。

版权提示 | 免责声明

本文(DLA SMD-5962-92035 REV C-2004 MICROCIRCUIT LINEAR HIGH SPEED 2 1 ANALOG MULTIPLEXER MONOLITHIC SILICON《硅单块 2 1模拟多路调制器 高速直线式微型电路》.pdf)为本站会员(towelfact221)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-92035 REV C-2004 MICROCIRCUIT LINEAR HIGH SPEED 2 1 ANALOG MULTIPLEXER MONOLITHIC SILICON《硅单块 2 1模拟多路调制器 高速直线式微型电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to 1.3 and TABLE I. In accordance with N.O.R. 5962-R290-97. 97-04-29 R. MONNIN B Make change to 1.3 and editorial changes throughout. Redrawn. ro 97-10-21 R. MONNIN C Updated drawing to reflect current requirements. -rrp 04-07-13 R.

2、MONNIN THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990

3、http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, HIGH SPEED, 2:1 ANALOG MULTIPLEXER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-04-15 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 6726

4、8 5962-92035 SHEET 1 OF 9 DSCC FORM 2233 APR 97 5962-E342-04 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92035 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 223

5、4 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN).

6、When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 92035 01 Q C A Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4

7、) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA

8、levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 CLC532 2:1 Analog multiplexer, high speed 1.2.3 Device class designator.

9、 The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix

10、 A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1

11、.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92035 DEFENSE SUPPL

12、Y CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Positive supply voltage (+VCC). -0.5 V to +7.0 V Negative supply voltage (-VEE) +0.5 V to -7.0 V Differential voltage between any two ground pins . 200 mV Analog input voltage

13、range -VEEto +VCCDigital input voltage range. -VEEto +VCC Output current (IOUT) 36 mA Output short circuit duration (output shorted to GND) . Infinite Junction temperature (TJ) +175C Storage temperature range . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Power dissipation (PD): Case

14、 C . 1.76 W Case 2 3.0 W Thermal resistance, junction-to-ambient (JA): Case C . 85C/W Case 2 50C/W Thermal resistance, junction-to-case (JC): Case C . 35C/W Case 2 35C/W 1.4 Recommended operating conditions. Positive supply voltage (+VCC). +5.0 V Negative supply voltage (-VEE) -5.2 V or -5.0 V Diffe

15、rential voltage between any two ground pins . 10 mV Analog input voltage range 2 V SELECT input voltage range (TTL mode) . 0 V to +3.0 V SELECT input voltage range (ECL mode). -2.0 V to 0 V COMPENSATION capacitance range (CCOMP) 0 pF to 100 pF Ambient operating temperature range (TA) -55C to +125C 2

16、. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract.

17、DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS M

18、IL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot f

19、or ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92035 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 (Copies of these documents are available online at http:/assist.daps.dla

20、.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing take

21、s precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified her

22、ein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class le

23、vel B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The

24、 case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristi

25、cs and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined i

26、n table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on t

27、he device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certificati

28、on mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML

29、-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of com

30、pliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

31、3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For devic

32、e class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the optio

33、n to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group num

34、ber 58 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92035 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Ele

35、ctrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Input bias current IBN 1,2 01 -120 +120 A 3 -250 +250 Output offset voltage VOS1,2 01 -3.5 +3.5 mV 3 -6.5 +6.5 Supply current ICCVCC= +5 V, VIN= 0

36、 V, 1 01 28 mA no load 2 25 3 30 IEEVEE= -5.2 V, VIN= 0 V 1 01 -30 mA no load 2 -26 3 -31 Power supply rejection ratio PSRR 4 01 -63 dB 5 -64 6 -60 Gain accuracy GA 2 V 4,5,6 01 0.988 1.000 V/V Small signal bandwidth SSB -3 dB bandwidth, 4,6 01 140 MHz VOUT 0.1 VPP5 110 Gain flatness peaking GFP VOU

37、T 0.1 VPP, 4,6 01 0.7 dB at 0.1 MHz to 200 MHz 5 0.8 Gain flatness rolloff GFR VOUT 0.1 VPP, 4,6 01 -1.8 dB at 0.1 MHz to 100 MHz 5 -2.6 2nd harmonic distortion HD2 2 VPPat 5 MHz 4,5,6 01 -67 dBc 3rd harmonic distortion HD3 2 VPPat 5 MHz 4,5,6 01 -68 dBc 1/ Unless otherwise specified, +VCC= 5 V dc,

38、-VEE= -5.2 V dc, CCOMP= 10 pF and load resistance (RL) = 500 . Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92035 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2

39、234 APR 97 Device type 01 Case outline C 2 Terminal number Terminal symbol 1 GND NC 2 INAGND 3 GND INA4 INBGND 5 DGND NC 6 DREF INB7 SELECT NC 8 -VEEDGND 9 -VEEDREF 10 COMP2SELECT 11 OUTPUT NC 12 COMP1-VEE13 +VCC EE14 +VCCCOMP215 - NC 16 - OUTPUT17 - NC 18 - COMP119 - +VCC20 - +VCCNC = No connection

40、 FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92035 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1

41、 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein.

42、 For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspe

43、ction. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition B. The test circui

44、t shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified i

45、n method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in

46、the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing a

47、ctivity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional scree

48、ning for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including g

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1