DLA SMD-5962-92058 REV N-2010 MICROCIRCUIT DIGITAL CMOS DIGITAL SIGNAL PROCESSOR MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R233-93. 92-09-01 Monica L. Poelking B Changes in accordance with NOR 5962-R224-94. 93-07-05 Monica L. Poelking C Add device type 03. Editorial changes throughout. 94-10-10 Monica L. Poelking D Add device type

2、04. Update boilerplate. Editorial changes throughout. 96-01-15 Monica L. Poelking E Add case outlines Z and U. Changes to boilerplate. Editorial changes throughout. 97-01-29 Monica L. Poelking F Add appendix A. Editorial changes throughout. - TMH 97-07-11 Thomas M. Hess G Changes in accordance with

3、NOR 5962-R042-99. 99-03-04 Monica L. Poelking H Added junction temperature to document. - LTG 99-11-19 Monica L. Poelking J Add device type 05. - LTG 00-11-20 Thomas M. Hess K Changed case temperature range for device type 05. Updated boilerplate and made editorial changes throughout. - LTG 01-03-15

4、 Thomas M. Hess L Change VIHfor RESET input in section 1.4. Make following changes to table I: Change VDDfor IZ; delete IICtest; change ICC limits; change tD2, tD9, tD11, tSU10, tD28, tD29, tW6, tH11, tD35, tSU16, tV4, tW8, tEN3, tSU18, tD38limits; add tDIS8test; delete footnote 2/. Correct function

5、al block diagram in figure 3. Change TIMER PIN TIMINGS waveform. Add SHZ TIMING waveform. Correct table III. Add application note to section 6. Correct pad names in figure A-1. Editorial changes throughout. TVN 02-02-26 Thomas M. Hess M Update boilerplate to current MIL-PRF-38535 requirements. - CFS

6、 07-12-05 Thomas M. Hess N Add device type 06.- MAA 10-08-13 Thomas M. Hess REV SHEET REV N N N N N N N N N N N N N N N N N SHEET 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 REV N N N N N N N N N N N N N N N N N N N N SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 REV STATU

7、S OF SHEETS REV N N N N N N N N N N N N N N SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thomas M. Hess DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF TH

8、E DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thomas M. Hess APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, CMOS, DIGITAL SIGNAL PROCESSOR, MONOLITHIC SILICON DRAWING APPROVAL DATE 93-03-26 REVISION LEVEL N SIZE A CAGE CODE 67268 5962-92058 SHEET 1 OF 51 DSCC FORM 2233 APR 97 5962-E450-10 Provi

9、ded by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 SIZE A 5962-92058 REVISION LEVEL N SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product

10、assurance class levels consisting of high reliability (device classes Q and M) and appendix F of MIL-PRF-38535, “General provisions for TAB microcircuits”, and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying N

11、umber (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 92058 01 M X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outlin

12、e (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A spe

13、cified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Operating temperature Circuit function 01 320C31 -55C min to +125C max Digital si

14、gnal processor, 27 MHz 1/ 02 320C31 -55C min to +125C max Digital signal processor, 33 MHz 1/ 03 320C31 -55C min to +125C max Digital signal processor, 40 MHz 04 320C31 -55C min to +125C max Digital signal processor, 50 MHz 05 320C31 -55C min to +105C max Digital signal processor, 60 MHz 06 320C31 -

15、55C min to +115C max Digital signal processor, 40 MHz 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compl

16、iant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A, and appendix F of MIL-PRF-38535 Q or V Certification and qualification to MIL-PRF-38535 and appendix F of MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:

17、 Outline letter Descriptive designator Terminals Package style X See figure 1 141 Pin grid array Y See figure 1 132 Quad flat pack with non-conductive tie bar Z See figure 1 132 Tape automated bond U See figure 1 132 Environmentally protected tape automated bond 1.2.5 Lead finish. The lead finish is

18、 as specified in MIL-PRF-38535 and appendix F of MIL-PRF-38535, for device classes Q and V or MIL-PRF-38535, appendix A and appendix F of MIL-PRF-38535 for device class M. _ 1/ Not available from an approved source of supply.Provided by IHSNot for ResaleNo reproduction or networking permitted withou

19、t license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 SIZE A 5962-92058 REVISION LEVEL N SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VDD) 2/ -0.3 V dc to 7.0 V dc Input voltage range . -0.3 V dc to 7.0 V

20、 dc Output voltage range . -0.3 V dc to 7.0 V dc Continuous power dissipation 3/ 3.15 W Storage temperature range . -65C to +150C Junction temperature (TJ): Case outlines X and Y 150C Case outlines 9, U and Z 125C Thermal resistance, junction to case (JC): Case X . 4.25C/W Cases Y . 2.13C/W Maximum

21、die temperature rise for the die at 100% Cases Z and U . 0.9C/W 1.4 Recommended operating conditions. Supply voltages (VDD): Device types 01 and 02 4.5 V dc min to 5.5 V dc max Device types 03, 04, and 05 . 4.75 V dc min to 5.25 V dc max Supply voltages (CVSS, etc.)(VSS) 0 V dc nominal High level in

22、put voltage, except RESET (VIH) 4/ . 2.1 V dc min to VDD+0.3 V dc max High level input voltage, RESET (VIH) 4/ . 2.2 V dc min to VDD+0.3 V dc max Low level input voltage (VIL) 4/ . -0.3 V dc min to 0.8 V dc max High level output current (IOH) . -300 A max Low level output current (IOL). 2 mA max CLK

23、IN high level input voltage (VTH) 4/ 3.0 V dc Min to VDD+0.3 V dc max Operating case temperature (TC): For device types 01, 02, 03, and 04 . -55C min to +125C max For device type 05 -55C min to +105C max For device type 06 -55C min to +115C max 1/ Stresses above the absolute maximum rating may cause

24、 permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ All voltage values are with respect to VSS. 3/ Actual operating power will be less. This value was obtained under specially produced worst-case test conditions, which are not

25、sustained during normal device operation. These conditions consist of continuous parallel writes of a checkerboard pattern to both primary and expansion buses at the maximum rate possible. 4/ VIHmax, VILmin, and VTHmax are not production tested. Provided by IHSNot for ResaleNo reproduction or networ

26、king permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 SIZE A 5962-92058 REVISION LEVEL N SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specificat

27、ion, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General

28、Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawi

29、ngs. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the

30、 text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for d

31、evice classes Q and V shall be in accordance with MIL-PRF-38535, and appendix F of MIL-PRF-38535, “General provisions for TAB microcircuits” and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit

32、, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A, and appendix F of MIL-PRF-38535, for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die,

33、see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535, and appendix F of MIL-PRF-38535, and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device clas

34、s M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and on figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Functional block diagram. The functional block diagram shall be as specified on figure 3. 3.2.4 Swit

35、ching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 4. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter l

36、imits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. Provided by IHSNot for Res

37、aleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 SIZE A 5962-92058 REVISION LEVEL N SHEET 5 DSCC FORM 2234 APR 97 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In

38、addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked.

39、 Marking for device classes Q and V shall be in accordance with MIL-PRF-38535 and appendix F of MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A and appendix F of MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device clas

40、ses Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufactu

41、rer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DS

42、CC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535, and appendix F of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A an

43、d appendix F of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notificati

44、on of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, a

45、nd the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this

46、drawing shall be in microcircuit group number 105 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 SIZE A 5962-92058 REVISION LEVEL

47、 N SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TC +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max High level output voltage VOHVDD= Min (see 1.4) IOH= -300 A 1, 2, 3 All 2.4 V Low level output voltag

48、e VOLVDD= Min (see 1.4) IOL= 2.0 mA 0.6 Three state current IZVDD= Max (see 1.4) -20 20 A Input current IINVIN= VSSto VDD-10 10 Input current with internal pull-ups 2/ IIP-600 20 Supply current 3/ ICCVDD= Max fx= 27 MHz 1 01 250 mA fx= 33 MHz 02 325 fx= 40 MHz 03, 06 400 fx= 50 MHz 04 425 fx= 60 MHz

49、 05 475 Input capacitance CINSee 4.4.1b 4 All 15 pF Output capacitance COUT20X2/CLKIN CX25Functional testing See 4.4.1d 7, 8 All Fall time, CLKIN 4/ tF1X2/CLKIN timing 9, 10, 11 All 5 ns Pulse duration, CLKIN low tW1See figure 4 tC1= 37 ns 9, 10, 11 01 13.0 ns tC1= 30 ns 02 10.5 tC1= 25 ns 03, 06 9.0 tC1= 20 ns 04