DLA SMD-5962-92066 REV A-2004 MICROCIRCUIT DIGITAL ECL OCTAL ECL TTL BI-DIRECTIONAL TRANSLATOR WITH REGISTER MONOLITHIC SILICON《硅单块 带自动记录器的双向翻译器 八进制发射极耦合逻辑或晶体管-晶体管逻辑电路 发射极耦合逻辑 数字微型.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update to reflect latest changes in format and requirements. Editorial changes throughout. -les 04-10-27 Raymond Monnin THE ORIGINAL FIRST PAGE OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV A A A SHEET 16 17 18 REV STATUS REV A A A A A A A A A

2、A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 12 13 14 15 PMIC N/A PREPARED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thanh V. Nguyen COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Mo

3、nica L. Poelking MICROCIRCUIT, DIGITAL, ECL, OCTAL ECL/TTL, BI-DIRECTIONAL TRANSLATOR AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-06-14 WITH REGISTER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-92066 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E425-0

4、4 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92066 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two p

5、roduct assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance

6、(RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 92066 01 M X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1

7、.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator.

8、 A dash (-) indicates a non-RHA device. 1.2.2 Device type. The device type identifies the circuit function as follows: Device type Generic number Circuit function 01 100329 Octal ECL/TTL bi-directional translator with register 1.2.3 Device class designator. The device class designator is a single le

9、tter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification t

10、o MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X GDIP5-T24 or CDIP6-T24 24 dual-in-line Y See figure 1 24 quad-flat 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38

11、535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92066 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A

12、SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Negative supply voltage range (VEE) -7.0 V dc to +0.5 V dc Positive supply voltage range (VTTL) -0.5 V dc to +6.0 V dc Storage temperature range -65C to +150C Maximum power dissipation (PD) . 805 mW Lead temperature (soldering, 10 second

13、s) +300C Junction temperature (TJ) +175C Thermal resistance, junction-to-case (JC): Case X See MIL-STD-1835 Case Y 28 C/W ECL-to-TTL translation DC input voltage range (VIN) VEEto +0.5 V Maximum dc output current (IOUT) -50 mA TTL-to ECL translation DC input voltage range (VIN) -0.5 V to +6.0 V 2/ D

14、C input current range (IIN) -30 mA to +5.0 mA 2/ Voltage applied to output in high state . -0.5 V to +5.5 V Maximum current applied to output in low state . 48 mA 1.4 Recommended operating conditions. Negative supply voltage range (VEE) -5.7 V dc minimum to -4.2 V dc maximum Positive supply voltage

15、range (VTTL) . +4.5 V dc minimum to +5.5 V dc maximum Case operating temperature range (TC) . -55C to +125C ECL-to-TTL translation High level input voltage range (VIH) -1.165 V dc minimum to -0.870 V dc maximum Low level input voltage range (VIL) . -1.830 V dc minimum to -1.475 V dc maximum Minimum

16、setup time, En to CP (ts): TC= +25 C 2.0 ns TC= +125 C, -55 C 2.5 ns Minimum hold time, En to CP (th): TC= +25 C 2.5 ns TC= +125 C, -55 C 3.0 ns Minimum pulse width, high, CP (tPW): TC= +25 C, -55 C 2.5 ns TC= +125 C 5.0 ns Maximum toggle frequency (fMAX): TC= +25 C, -55 C 200 MHz minimum TC= +125 C

17、 100 MHz minimum _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Either voltage limit or current limit is sufficient to protect inputs. Provided by IHSNot for ResaleN

18、o reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92066 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 TTL-to-ECL translation Minimum high level input voltage (VIH) . +2.0 V Maximum l

19、ow level input voltage (VIL) +0.8 V Minimum setup time, Tn to CP (ts): TC= +25 C 2.0 ns TC= +125 C, -55 C 2.5 ns Minimum hold time, Tn to CP (th): TC= +25 C 2.0 ns TC= +125 C, -55 C 2.5 ns Minimum pulse width, high, CP (tPW): TC= +25 C 2.0 ns TC= +125 C, -55 C 2.5 ns Maximum toggle frequency (fMAX)

20、. 250 MHz minimum 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicit

21、ation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF

22、DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins

23、Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a s

24、pecific exemption has been obtained. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92066 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3. REQUIREMEN

25、TS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function

26、 as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as

27、specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.2 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on fig

28、ure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.4 Test circuit and switching waveforms. The test circuit and switching waveforms shall be as specified on figures 4 and 5. 3.3 Electrical performance characteristics and post-irradiation parameter limits. Unless otherwi

29、se specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in tab

30、le II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the

31、manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appen

32、dix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and

33、V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply

34、 in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M,

35、 the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawin

36、g. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSC

37、C, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices

38、 covered by this drawing shall be in microcircuit group number 32 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92066 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-399

39、0 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TC +125C -5.7 V VEE -4.2 V +4.5 V VTTL +5.5 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max ECL-to-TTL translation High level output voltage

40、 VOHVEE= -4.2 V, -5.7 V, IOH = -1.0 mA 1, 2 All 2.5 V VTTL= 4.5 V, 3 2.4 VIH= -1.165 V, IOH = -3.0 mA 1, 2, 3 2.4 Low level output voltage VOLVIL= -1.475 V, IOL = 24.0 mA 1, 2, 3 All 0.5 V High level input current IIHVEE= -5.7 V, VTTL= 5.0 V, 1, 2 All 350 A VIN= -0.87 V 3 500 Low level input current

41、 IILVEE= -4.2 V, VTTL= 5.0 V, VIN= -1.83 V 1, 2, 3 All 0.5 A Output short-circuit current 2/ IOSVEE= -4.5 V, VTTL= 5.5 V , VOUT= 0.0 V 1, 2, 3 All -60 -150 mA High level output disable current IOZHVEE= -4.5 V, VTTL= 5.5 V VOUT= 2.7 V 1, 2, 3 All 70 A Low level output disable current IOZL VOUT= 0.5 1

42、, 2, 3 All -1.0 mA Positive power supply ITTLLVEE= -4.5 V, 1, 2, 3 All 75 mA drain current ITTLHVTTL= 5.5 V 50 ITTLZ70 Functional tests VEE= -5.7 V, -4.2 V, VIL= -1.642 V, VIH= -1.023 V, VTTL= 4.5 V, 5.5 V, see 4.4.1b 7, 8 All Propagation delay time, tPLHSee figure 4 9 All 3.1 7.3 ns CP to Tn tPHL10

43、 3.3 8.0 11 3.1 8.0 Output enable time to tPZH19 All 3.7 9.0 ns high level, OE to Tn 10 4.0 10.1 11 3.4 9.1 Output enable time to tPZL19 All 4.0 9.3 ns low level, OE to Tn 10 4.3 10.4 11 3.7 9.5 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted witho

44、ut license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92066 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TC +125C -5.7 V VEE -4.2 V +4.5 V

45、VTTL +5.5 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max ECL-to-TTL translation - Continued Output disable time from tPHZ1See figure 4 9 All 3.3 9.0 ns high level, OE to Tn 10 3.5 9.3 11 3.2 10.0 Output disable time from tPLZ19 All 3.4 8.8 ns low level, OE to Tn 10 4.

46、1 10.4 11 3.0 9.8 Output disable time from tPHZ29 All 2.8 8.8 ns high level, DIR to Tn 10 3.0 9.0 11 2.6 9.5 Output disable time from tPLZ29 All 3.1 8.0 ns low level, DIR to Tn 10 4.0 9.6 11 2.7 8.7 TTL-to ECL translation High level output voltage VOHVEE= -4.2 V, -5.7 V, 1, 2 All -1.025 -0.870 V VTT

47、L= 4.5 V, 5.5 V, 3 -1.085 -0.870 Low level output voltage VOLVIH= 3.0 V, OE = DIR 1, 2 All -1.830 -1.620 V VIL= 0.0 V, = -0.87 V 3 -1.830 -1.555 OE = -1.83 V 1, 2 -1.950 3 -1.850 High level threshold VOHC1, 2 All -1.035 V output voltage VEE= -4.2 V, -5.7 V, VIH= 2.0 V, VTTL= 4.5 V, 5.5 V, VIL= 0.8 V

48、 3 -1.085 Low level threshold VOLCAll -1.610 output voltage VEE= -4.2 V, -5.7 V, VIH= 2.0 V, VTTL= 4.5 V, 5.5 V, VIL= 0.8 V, OE = DIR = -1.165 V 3 -1.555 1, 2 -1.950 VEE= -4.2 V, -5.7 V, VIH= 5.0 V, VTTL= 4.5 V, 5.5 V, VIL= 0.0 V, OE = -1.475 V 3 -1.850 Input clamp diode voltage VCDVEE= -4.5 V, VTTL= 4.5 V, IIN= -18 mA 1, 2, 3 All -1.2 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRC