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本文(DLA SMD-5962-92079 REV B-2009 MICROCIRCUIT LINEAR VOLTAGE REGULATOR SWITCHING MONOLITHIC SILICON.pdf)为本站会员(figureissue185)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-92079 REV B-2009 MICROCIRCUIT LINEAR VOLTAGE REGULATOR SWITCHING MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R025-94. 94-02-24 M. A. FRYE B Drawing updated to reflect current requirements. Redrawn. -rrp 09-08-19 C. SAFFLE REV SHEET REV SHEET REV STATUS REV B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC

2、N/A PREPARED BY MARCIA B. KELLEHER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY SANDRA B. ROONEY COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, VOLTAGE REGULATOR, SWITC

3、HING, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-09-17 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-92079 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E208-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS

4、-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92079 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space

5、 application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5

6、962 - 92079 01 M P A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specif

7、ied RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify th

8、e circuit function as follows: Device type Generic number Circuit function 01 LT1172 100 kHz switching regulator with internal 1.25 A switch 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requireme

9、nts documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-ST

10、D-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo r

11、eproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92079 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VIN) 40 V dc Switch output voltage

12、 (VSW) . 65 V dc Feedback pin voltage (VFB), (transient, 1 ms) . 15 V dc Junction temperature (TJ) . +150C Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) 10

13、0C/W 1.4 Recommended operating conditions. Supply voltage range . 3 V dc to 40 V dc Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawi

14、ng to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883

15、 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/

16、assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes preced

17、ence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect rel

18、iability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92079 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. T

19、he individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The i

20、ndividual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535

21、and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characte

22、ristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electr

23、ical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire

24、 SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for d

25、evice class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, append

26、ix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manu

27、facturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the r

28、equirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be pr

29、ovided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verif

30、ication and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircu

31、it group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 52 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962

32、-92079 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C VIN= 15 V, VC= 0.5 V, VFB= VREFunless otherwise specified Group A subgroups Device type Limits Unit Min

33、 Max Error amplifier transconductance gm IC= 25 A 4 01 3000 6000 mho 5, 6 2400 7000 Error amplifier source and sink current VC= 1.5 V 4 01 150 350 A 5, 6 120 400 Error amplifier clamp voltage Hi Clamp, VFB= 1 V, TA= +25C 1 01 1.8 2.3 V Low Clamp, VFB= 1.5 V, TA= +25C 0.25 0.52 Error amplifier voltag

34、e gain AV0.9 V VCpin 1.4 V, TA= +25C 1 01 500 V/V Supply current IQ3 V VIN VMAX, VC= 0.6 V, TA= +25C 1 01 9 mA Feedback input current IBVFB= VREF1 01 750 nA 2, 3 1100 Reference voltage VREFVC = 0.8 V, measured at FEEDBACK pin 1 01 1.224 1.264 V 2, 3 1.214 1.274 Reference voltage line regulation VRLI

35、NE3 V VIN VMAX, VC= 0.8 V 1, 2, 3 01 0.03 %/V Minimum input voltage VIN1, 2, 3 01 3.0 V Control pin threshold Duty cycle = 0 1 01 0.8 1.08 V 2, 3 0.6 1.25 Output switch breakdown voltage BV 3 V VIN VMAX1, 2, 3 01 65 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or net

36、working permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92079 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TA +125C VIN=

37、15 V, VC= 0.5 V, VFB= VREFunless otherwise specified Group A subgroups Device type Limits Unit Min Max Output switch “On” resistance VSAT1/ 4, 5, 6 01 1 Switch current limit ILIMDuty cycle = 50% 2/ 4 01 1.25 3 A 5, 6 1.25 3.5 Duty cycle = 80% 2/ 4, 5, 6 1.0 2.5 Supply current increase during switch

38、on-time IIN/ISWTA= 25C 4 01 35 mA/A Maximum switch duty cycle DC (max) TA= 25C 4 01 80 95 % Shutdown mode supply current 3 V VIN VMAX, VCpin = 0.05 V, TA= 25C 1 01 250 A Shutdown mode threshold voltage 3 V VIN VMAX1 01 100 250 mV 2, 3 50 300 Switching frequency f 4 01 88 112 kHz 5, 6 85 115 1/ Measu

39、red with VCin high clamp, VFB= 0.8 V, ISW= 1 A. 2/ For duty cycles (DC) between 50% and 80%, minimum guaranteed switch current is given by ILIM= 0.833 (2 DC). 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-P

40、RF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screeni

41、ng. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all

42、 devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to

43、 the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be

44、 as specified in table II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92079 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 Device type 01 C

45、ase outlines P Terminal number Terminal symbol 1 GND 2 VC3 FEEDBACK (FB) 4 NC 5 VIN6 E1 7 VSW8 E2 NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-92079 DEFEN

46、SE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM pl

47、an in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test

48、 circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device cl

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