DLA SMD-5962-92118 REV N-2012 MICROCIRCUIT DIGITAL CMOS RADIATION HARDNENED MIL-STD-1553 SERIAL MICRO-CODED MONOLITHIC MULTI-MODE INTELLIGENT TERMINAL MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R208-93. 93-08-06 Monica L. Poelking B Changes in accordance with NOR 5962-R187-94. 94-06-08 Monica L. Poelking C Add device type 02. Editorial changes throughout. 96-01-05 Monica L. Poelking D Changes in accor

2、dance with NOR 5962-R299-97. 97-05-29 Monica L. Poelking E Add device type 03. Editorial changes throughout. - TVN 98-06-29 Monica L. Poelking F In table IA: Add test conditions for IIN; change the limits for QIDD; remove the test condition VDD= 4.5 V for all the propagation delay tests; change the

3、limits for taand tiin memory read timing section; change the limits of tcin DMA timing section; and change the limit of tain JTAG timing section. Include pin connections for case outlines X and Z in radiation exposure connections. Editorial changes throughout. - TVN 98-09-18 Monica L. Poelking G In

4、table I, change IINlimits; add a footnote to QIDD; add tcin power-up master reset timing section. Correct the JTAG timing waveforms. TVN 99-05-26 Monica L. Poelking H Add device type 04. Editorial changes throughout. TVN 00-07-18 Monica L. Poelking J Add notes to memory write and memory read wavefor

5、ms. Add figure B-1 to appendix A. Editorial changes throughout. TVN 01-03-15 Thomas M. Hess K Update boilerplate to MIL-PRF-38535 requirements, to include radiation hardness assurance requirements. CFS 07-07-30 Thomas M. Hess L Correct die thickness in appendix A. Correct high level output voltage t

6、est condition IOH in table IA. Correct address bus pins (A5-A15) description and add footnote 4/ in table III. Update electrical test requirements for group C and group D in table IIA. - MAA 11-06-07 David J. Corbett M Correct package type Y case outline dimensions A1 and L in figure 1. - MAA 11-11-

7、14 Thomas M. Hess N Add MIL-STD-1553 protocol stress test (Fstress) and add footnote10 / to table IA MAA 12-05-08 Thomas M. Hess REV N N N N N N N N N N N N N N N N SHEET 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 REV N N N N N N N N N N N N N N N N N N N N SHEET 15 16 17 18 19 20 21 22 23 24 2

8、5 26 27 28 29 30 31 32 33 34 REV STATUS OF SHEETS REV N N N N N N N N N N N N N N SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thomas M. Hess DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR U

9、SE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A CHECKED BY Thomas M. Hess APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, CMOS, RADIATION HARDNENED, MIL-STD-1553 SERIAL MICRO-CODED MONOLITHIC MULTI-MODE INTELLIGENT TERMINAL, MONOLITHIC SILICON DRAWING APPROVAL DATE 93-

10、06-07 REVISION LEVEL N SIZE A CAGE CODE 67268 5962-92118 SHEET 1 OF 50 DSCC FORM 2233 APR 97 5962-E280-12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-92118

11、REVISION LEVEL N SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in

12、the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 H 92118 01 V X X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device c

13、lass designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the M

14、IL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 UT69151 MIL-STD-1553 bus controll

15、er, remote terminal, monitor interface 02 UT69151E MIL-STD-1553 bus controller, remote terminal, monitor interface radiation hardened 03 UT69151E MIL-STD-1553 bus controller, remote terminal, monitor interface 04 UT69151C MIL-STD-1553 bus controller, remote terminal, monitor interface radiation hard

16、ened 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in acco

17、rdance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CMGA3-P84 84 Pin grid array Y See figure 1 84 Lea

18、ded chip carrier Z See figure 1 132 Leaded chip carrier with unformed leads, nonconductive tier bar 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networki

19、ng permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-92118 REVISION LEVEL N SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VDD) -0.3 V dc to +7.0 V dc Voltage on any pin . -0.3 V dc t

20、o VCC+ 0.3 V dc Latchup immunity (ILU) . 150 mA DC input current (II) 10 mA Maximum power dissipation (PD) . 2.5 W Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 5 seconds) +300C Thermal resistance, junction-to-case (JC) . 15C/W Maximum junction temperature (TJ) . 175C

21、 1.4 Recommended operating conditions. Supply voltage range (VDD) +4.5 V dc to +5.5 V dc DC input voltage (VIN) 0 V dc to VDDMaximum input voltage (VIL). 0.8 V dc Maximum input voltage, 24 MHz input (VILC) . 0.3 VDDMinimum input voltage (VIH) . 2.2 V dc Minimum input voltage, 24 MHz input (VIHC) 0.7

22、 VDDOperating frequency (fIN) 24 0.01% MHz Duty cycle (DC). 50 5% Case operating temperature range (TC) . -55C to +125C 1.5 Radiation features: Maximum total dose available (dose rate = 50 300 rads(Si)/s): Device type 02 . 1 x 106rads (Si) Device type 04 . 300K rads (Si) Single event phenomena (SEP)

23、: No SEU occurs at effective LET (see 4.4.4.5): Device type 02 47 MeV/(mg/cm2) 2/ Device type 04 14.4 MeV/(mg/cm2) 2/ No SEL occurs at effective LET (see 4.4.4.5): Device type 02 136 MeV/(mg/cm2) 2/ Device type 04 128 MeV/(mg/cm2) 2/ Dose rate upset (20 ns pulse) 2/ 3/ Dose rate latchup . 2/ 3/ Dose

24、 rate survivability 2/ 3/ Neutron irradiation . 2/ 3/ 1.6 Digital logic testing for device classes Q and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012) . 95.12 percent _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device

25、. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Limits are guaranteed by design or process but not production tested unless specified by the customer through the purchase order or contract. 3/ When characterized as a result of the procuring activities re

26、quest, the condition will be specified. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-92118 REVISION LEVEL N SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUM

27、ENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFE

28、NSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List

29、 of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Govern

30、ment publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measu

31、rement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Copies of this document are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA 19428-2959.) INSTITUTE OF ELECTRICAL AND ELECT

32、RONICS ENGINEERS (IEEE) IEEE Standard 1149.1 - IEEE Standard Test Access Port and Boundary Scan Architecture. (Applications for copies should be addressed to the Institute of Electrical and Electronics Engineers, 445 Hoes Lane, Piscataway, NJ 08854-4150.) 2.3 Order of precedence. In the event of a c

33、onflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item

34、 requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item req

35、uirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. Provided by IHSNot for ResaleNo reproduction or networking

36、permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 SIZE A 5962-92118 REVISION LEVEL N SHEET 5 DSCC FORM 2234 APR 97 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as speci

37、fied in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 and figure 1 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2

38、. 3.2.3 Block diagram. The block diagram shall be as specified on figure 3. 3.2.4 Boundary scan instruction codes. The boundary scan instruction codes shall be as specified on figure 4. 3.2.5 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figu

39、res 5 through 13. 3.2.6 Radiation exposure connections. The radiation exposure connections shall be as specified on figure 14. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradi

40、ation parameter limits are as specified in table IA and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Ma

41、rking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RH

42、A product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for devic

43、e classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed man

44、ufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted

45、 to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.

46、3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For devic

47、e class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritime

48、s agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covere

49、d by this drawing shall be in microcircuit group number 105 (see MIL-PRF-38535, appendix A). 3.11 IEEE 1149.1 compliance. Theses devices shall be compliant with IEEE 1149.1. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990