DLA SMD-5962-92171-1993 MICROCIRCUIT DIGITAL HCMOS 8-BIT ERROR CORRECTING REED-SOLOMON CODEC MONOLITHIC SILICON《硅单片 8位误差校正所罗门代码编码译码器 HCMOS数字微型电路》.pdf

1、LTR DESCRIPTION DATE (YR-MO-DA) REV I I APPROVED SHEET SHEET REV STATUS OF SHEETS SIZE B PMIC N/A 5962-921 71 CAGE CODE 67268 STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC NIA SHEET PREPARED BY Thomas M. Hess CHECKED

2、 BY Christopher A. Rauch APPROVED BY Monica L. Poelking DRAWING APPROVAL DATE 93-12-22 REVISION LEVEL DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 MICROCIRCUIT, DIGITAL, HCMOS, 8-BIT ERROR CORRECTING REED-SOLOMON CODEC, MONOLITHIC SILICON SHEET 1 OF 15 5962-E422-93 JUL 91 DISTRIBUTION STATEM

3、ENT A. Approved for public release: distribution is unlimited. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-W 9999976 0049550 593 = STANDARD1 BED SI BE 5962-92171 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER REVISION LEVEL SHEET DAYTON, OH

4、IO 45444 a 1. SCOPE 1.1 scow. This drawing forms a part of a one part - one part mniber docunentation system (see 6.6 herein). Two product assurance classes consisting of military high reliability (device classes P and Ml and space application (device class V), and a choice of case outlines and lead

5、 finishes are available and are reflected in the Part or Identifying Nunber (PIN). Device class M microcircuits represent non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STO-883, 8nPrwisions for the use of MIL-STD-883 in conjuiction with capliant non-JAN devicesn1. Uhen available, a ch

6、oice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 m. The PIN shall be as shom in the following exanple: 92 171 - o1 n X X T - I Lead I Case T I Device I Federal RHA Device tnw c 1 ass outline finish IL stock class designator designator (see 1.2.1) (see 1.2.2) designator

7、 (see 1.2.4) (see 1.2.5) L / (see 1.2.3) / Drawing nunber 1.2.1 RHA desianator. Device class H RHA marked devices shall meet the MIL-1-38535 appendix A specified RHA levels and shall be mrked with the appropriate RHA designator. Device classes P and V RHA marked devices shall meet the MIL-1-38535 sp

8、ecified RHA levels and shall be marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 pevice tmets). lhe device type) shall identify the circuit function as follows: Device tm Generic mmber Circuit function O1 02 64710-33 64710-25 8-Bit error correcting Reed-Solm e

9、ncoder/decoder 8-Bit error correcting Reed-Solainon encoder/decoder 1.2.3 Device class desianator. The device class designator shall be a single letter identifying the product assurance level as follows: Device class Device reauirements docunentation M Vendor self-certification to the requirements f

10、or non-JAN class B microcircuits in accordance with 1.2.1 of MIL-STD-883 a or v Certification and qualification to MIL-1-38535 1.2.4 Case outLineCs). lhe case outline(s shall k as designated in MIL-STD-1835 and as follows: Outline letter pescr i Dt i ve des i gnat or lerminats Packase style X CIIA15

11、-P 68 Pin grid array 1.2.5 Lead finish. The Lead finish shall be as specified in MIL-STD-883 (see 3.1 herein) for class M or MIL-1-38535 for classes P and V. Finish letter nnX“ shall not be marked on the microcircuit or its packaging. lhe uXnn I designation is for use in specifications hen lead fini

12、shes A, B. and C are considered acceptable and interchangeable Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-9999996 OOY955L 42T = I 1.3 Absolute maximum ratinss. 1/ DC supply voltage (VDD) -0.3 V dc to +7.0 V dc Input voltage (VI ) -0.3 V to VDD +

13、 9.3 V Junction temperature (TJ) . +16OoC Power dissipation (Po) DC input current viIN) *io n Storage temperature range -65C to +150“C Lead temperature (soldering, 10 seconds) Theml resistance, junction-to-case (eJc) 1.4 Recomnended operatinu conditions. . +275C 1.8 W 2“C/W DC supply voltage (Voo) t

14、4.0 V dc to +6.0 V dc Operating anhient temperature range (TA) Input high voltage range (VI ) . -55C to +125“C 2.25 V minimm Input low voltage range (VIL! . 0.8 V maximim 1.5 Diuital lwic testina for device classes O and V. Fault coverage measurement of manufacturing logic tests (MIL-STO-883, test m

15、ethod 5012) XX percent z/ 2. APPLICABLE DOCUMENTS STANDARDIZED HILITARY DRAUING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 2.1 Government specification, standards, bulletin, and handbook. Unless otherwise specified, the following specification, standards, bulletin, and handbook of the issu

16、e listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified SIZE 5962-92171 A REVISION LEVEL SHEET 3 herein. SPEC IF I CATION MILITARY MIL-1-38535 - Integrated Circuits. Manufacturing, Ge

17、neral Specification for. STANDARDS MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectronics. MIL-STO-973 - Configuration Management. MIL-STO-1835 - Microcircuit Case Outlines. BULLETIN MILITARY MIL-BUL-103 - List of Standardized Military Drawings (SMDIS). HANDBOOK MIL I TARY MIL-HDBK-

18、780 - Standardized Military Drawings. (Copies of the specification, standards, bulletin, and handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity. ) - I/ Stresses above the abs

19、olute maximum rating may cause permanent damage to the device. maximum levels may degrade performnce and affect reliability. 21 Values will be added when they become available. Extended operation at the DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted withou

20、t license from IHS-,-,-9997976 0049552 366 M Specified in UIL-STO-883 (see 3.1 herein) for device class W and MIL-1-38535 for device classes 9 and V and herein. The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.1 Case outline(s1. 3.2.2 Terminal comections. 3.2.3 B!. The block diagram

21、 shall be as specified on figure 2. 3.2.4 Radiation emsure circuit. 3.3 glectrical mrfomnce characteristics and castirradiation parameter limits. The terminal connections shall be as specified on figure 1. lhe radiation exposure circuit shall be specified when evailable. Unless otherwise specified h

22、erein, the electrical performance characteristics and postirradiation parameter limits are as specified in teble I and shall apply over the full ambient operating tenperature range. 3.1 Electrical test reauirements. The electrical test requirements shall be the subgroups specified in table II. 3.5 M

23、arking. lhe part shall be marked with the PIN listed in 1.2 herein. Marking for device class H shall be in The electrical tests for each subgrq are defined in table I. accordance with MIL-STD-883 (see 3.1 herein). 1n addition, the manufacturers PIN may also be marked as listed in , MIL-BUL-103. Mark

24、ing for device classes Q and V shall be in accordance with MIL-38535. 4.1 SIyiplina and insrjection. For device class M, senpling and inspection procedures shall be in accordance with For device classes Q and U, sampling and inspection procedures shall be in accordance MIL-STD-883 (see 3.1 herein).

25、with MIL-1-38535 and the device manufacturers Pn plan. 5962-92171 REVISION LEVEL SHEET STANDARD1 %ED MILITARY DRAWIN DEFENSE ELECTRONICS SUPPLY CETER DAYTON, OHIO 45444 DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-I CTANDARDI

26、 Z ED 5962-92171 HILITARY DRAKING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OE10 45444 I I I 01 DESC FORM 193A JUL 91 L ns 81 I I I I I o2 I 10 I I I I I 01 L ns 01 I I I IO2 I 01 I Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-4.5 v I VDD s5.5 v 1

27、1 I Win Man I 1 I DAYTON, OHIO 45444 I ECLK cycle tim tECYCLE I See figure 3, VDD = 4.5 V I 9, 10, 11 I O1 tEpH I See figure 3, VDo = 4.5 V I 9, IO, 11 I O1 I tEpL 1see figure 3, vDD = 4.5 v I 9, 10, 11 I O1 02 ECLK plse width, HIGH 02 ECLK pulse width, LOW 02 I REVISION LEVEL I SHEET 6 ns 33 1 I 40

28、 12 ns 15 I 12 15 . ns - DESC FORM 193A JUL 91 EIWs, ED1 input setup time I tES /I_ figure 3, voD = 4.5 v 1 9, 10, 11 O1 I 02 10 O I EIWS, ED1 input hold time tEH ISee I figure 3, voo = 4.5 V 1 9, 10, 11 IO1 02 I o EMS, EDO output delay I tED see figure 3, vDD = 4.5 v 1 9, 10, 11 I Il 02 ns ns 25 30

29、 ns DCLK cycle time tDCyCLE ISee figure 3, VDD = 4.5 v I 9, 10, 11 I 01 I 33 I I ns 1 02 40 1 I I DCLK pulse width, LOW I tDpL Icee figure 3, vDD = 4.5 v I 9, 10, 11 I 02 I 15 I I o1 I 12 02 15 I I ns DIMS, DDI input setup time 8 , ns tDS See figure 3, Vo6 = 4.5 V I 9, 10, 11 I O1 02 I 10 I DIMS, DD

30、I input hold tim I tDH o1 I o sec figure 3, vDD = 4.5 v I 9, 10, 11 . ns 02 O o1 25 Das, DOO, DFAIL, TDINC I tDD Isee figure 3, vDD = 4.5 v I 9, 10, 11 ns ouptut dtlsy 02 1 30 I SIZE STANDARDIZED DEFENSE ELECTRONICS SUPPLY CENTER NILITARY DRAWING A 5962-92171 Provided by IHSNot for ResaleNo reproduc

31、tion or networking permitted without license from IHS-,-,-999999b 0049555 075 = A EDI.1 EDLO ECLK ED0.6 ED0.4 VDD ED0.2 EDO.1 DD1.7 B ED12 vDD EMS ED0.7 ED0.5 vSS 00.3 vSS ED0. UD C %S ED1.3 PIN DD1.4 ALIGN DDI.6 DDIS TOP VIEW PINS WWN STANDARD1 ZED SI BE MILITARY DRAWING A DEFENSE ELECTRONICS SUPPL

32、Y CENTER DAYTN, OHIO 45444 REVISION LEVEL K CI.2 DD CL4 C1.6 vss DFAIL DDO.0 DDO.1 DD0.4 L CI3 CIS CI.7 TDINC %D DOMS vSS DD0.2 DD0.3 TOUT/ NC 5962-92171 SHEET 7 DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-W 99999b O049556 T

33、O1 - -i ECLK EIMS CTRLA ENCODER EDtO - ED1.7 MUXA REGSE L - I EOMS - 7 *EDO.O - EDD.7 STANDARD1 SED SIZE MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL DDI.0 - 5962-92171 SHEET 8 DDL7 o- 01 HUXC CTRLB DIMS L 1 DD.0 - DDD.7 DFAIL TDINC DOMS r DE CODER Provided

34、by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-999999b 0049557 948 I DDI N CODEVDRD 1 BYTES 1 -3 CYCLES EMS N CODCVORD BYTES DI -y p-1 CYCLE STANDARD1 &ED SIXE MILITARY DRAWIN A DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 EONS I 5962-92171 REVISION

35、LEVEL SHEET 9 -N CODEVOR0 BYTTES hN CODE-D BYTES EDO OPTIHIU. INTERCODfMRO OPTIONAL INTfRCO#McID XffORMATION IVTIOH ENCODER FUWCTIONK TIMIMI DIAGRAM DIS OPTIONAL INTERCODEVOPD INORWTION DOO WAIL DECODER FMTIDNM TIMING DIAGRAC( DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or net

36、working permitted without license from IHS-,-,-9999996 0049558 884 - VE CI REGSEL CONTRM SECTION ECLK EMS ED1 EOHS EDO ENCODER SECTION DCLK DIMS DDI DOMS DDO WAIL TDiNC DECODER SECTION FIWRE 3. Timina waveform. - Continued STLINDARDI XED SIZE 5962-92171 MILITARY DRAWING A DEFENSE ELECTRONICS SUPPLY

37、CENTER DAYTON, OBI0 45444 REVISION LEVEL SHEET 10 J DESC FORM 193A JUL 91 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-. 4.2 Screening. For device class M, screening shall be in accordance with method 5004 of MlL-STD-883, and shall be conducted on

38、 all devices prior to quality conformance inspection. For device classes Q and V, screeniw shall be in accordance uith MIL-1-38535, and shall be conducted on all devices prior to qualification and technology conformance inspect i on. 4.2.1 Additional criteria for device class M. a. Burn-in test, met

39、hod 1015 of MIL-STD-883. (11 Test condition A or D. level control and shall be made available to the preparing or acquiring activity upon request. circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. The

40、 test circuit shall be maintained by the manufacturer under docunent revision The test (2) TA = +12SoC, mininm. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes P and V. STANDARDIBED SISE MILITARY DRAWING A DEFENSE

41、 ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL 5962-92 17 1 SHEET 11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-TH 5005, table i) Devi ce dass U 4.4.2.2 Additional criteria for device classes Q and V. lhe steady-state life test dur

42、ation, test condition and test tenperature, or approved alternatives shall be as specified in the device mnufacturers PH plan in accordance with UIL-1-38535. ipon request. accordance with the intent specified in test method 1005. The test circuit shall be maintained vider docunent revision level con

43、trol by the device manufacturers TRB, in accordance with HIL-1-38535, and shall be made available to the acquiring or preparing activity The test circuit shall specify the inputs, outputs, biases, and power dissipetion, as applicable, in I I Devi ce Device I class O class v I I 4.4.3 Grou, D insmcti

44、an. The group D inspection end-point electrical parenieters shall be as specified in table II herein. I Finel electrical parameters (set 4.2) I I 1, 2, 3, 7, 8, r/ I 1, 2, 3, 7, 1/ 1, 2, 3, 7 Y 9, 10, 11 8, 9, 10, 11 I 8, 9, 10, 11 i I I I - STANDARD1 XED SI %E MILITARY DRAWING a DEFENSE ELECTRONICS

45、 SUPPLY CENTER DAYTON, 0810 45444 REVISION LEVEL 5962-92171 SHEET 12 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-9999996 0049561 379 I 6. NOTES 6.1 Intended use. Microcircuits conforming to this drawing are intended for use for Govermient microci

46、rcuit applications (original equipnent), design applications, and Logistics purposes. 6.1.1 ReDtaceability. Microcircuits covered by this drawing will replace the same generic device covered by a contractor-prepared spi f icat i on or drawing. 6.1.2 Substitutability. Device class devices will replac

47、e device class M devices. 6.2 Configuration control of SMDs. All proposed changes to existing 90s will be coordinated with the users of record for the individual docunents. This coordination will be acconplished in accordance with MIL-STD-973 using DD Form 1692, Engineering Change Proposal. 6.3 Reco

48、rd of users. Military and industrial users shall inform Defense Electronics Swly Center when a system application rcquircs configuration control and which SUDS are applicable to that system. DESC will maintain a record of users and this list will be used for coordination and distritution of changes to the drauings. Users of drawings covering microelectronic devices (FSC 5962) should contact DESC-EC, telephone (513) 296-6047. I 6.4 Camients. Cannicnts on this drawing should be directed to DESC-EC, Dayton, Ohio 45444-5270, or telephone (513) 296-5377. 6.5 Abbreviations. svinbols. and defini