DLA SMD-5962-92228-1994 MICROCIRCUIT DIGITAL FAST CMOS 10-BIT BUS INTERFACE LATCH WITH NONINVERTING THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS AND LIMITED OUTPUT VOLTAGE SWING MONOL.pdf

1、1 SUD-5762-92228 = 9799996 0064503 T1 .-IIu-I DRAWING APPROVAL DATE 94-1 0-1 8 REVISION LEVEL PREPARED BY PMIC NIA Joseph A. Kerby I DEFENSE ELECTRONICS SUPPLY CENTER OUTPUT VOLTAGE SWING, MONOLITHIC SILICON SIZE CAGE CODE 5962-92228 A 67268 SHEET 1 OF 20 DAYTON, OHIO 45444 CHECKED BY STANDARD MICRO

2、CIRCUIT Thanh V. Nguyen DRAWING MICROCIRCUIT, DIGITAL, FAST CMOS, . 10-BIT BUS INTERFACE LATCH WITH THIS DRAWING IS AVAIUBLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A I NONINVERTING THREE-STATE OUTPUTS, I TTL COMPATIBLE INPUTS AND LIMITED APPROVED BY Monica L. Poe

3、lking I kSC bORH 1Y5 JUL 94 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. 59624358-94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SND-59b2-92228 999999b 00b4504 953 SIZE STANDARD A MICROCIRCUIT DRAWING DEFENSE

4、ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL 1. SCOPE 1.1 Sfope. This drawing forms a part of a OM part - one part number documentation system (see 6.6 herein). Two product assurance classes umsisting of military high reliability (device classes Q and n) and spce application (device c

5、lass V), and a choice of case wtlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). 1.2.1 of NIL-STD-883, “Provisions for the use of RIL-STD-883 in conjunction with coqliant non-JAN devices“. available, a choice of Radiation Hardness Assurance CRHA) level

6、s are reflected in the PIN. Dcvice class n microcircuits represent non-JAN class microcircuits in accordance with Uhen 1.2 m. The PIN shall be as shown in the following exailple: sw2 - 92228 - o1 N K X I I I I I I I I I I I I - Lead case Device Devi ce RHA Federal stock class designator type class o

7、utline finish designator (See 1.2.1) (See 1.2.2) designator (See 7.2.4) (See 1.2.5) / (See 1.2.3) / Drawing number 1.2.7 RHA desiqnator. Device class N RHA marked devices shall meet the MIL-1-38535 appendix A specified RHA Levels and shall be Mrked with the appropriate AHA designator. NIL-1-38535 Sp

8、ecified RHA levels and shall be marked with the appropriate RHA designator. non-RHA device. Device classes Q and V MA marked devices shall meet the A dash (-) indicates a 5962-92228 SHEET 2 1.2.2 Device typeW. The device type(s) shall identify the circuit function as follows: Devi ce tyM Generic num

9、ber Circuit function 01 54FCT841AT 1Pbit bus interface latch with minverting three-stete outputs, TTL compatible inputs and linited output voltage swing. 10-bit bus interface latch with noninverting three-state outputs, TTL compatible inputs and Limited output voltage swing. 10-bit bus interface lat

10、ch with noninverting three-state outputs, TTL compatible inputs and limited output voltage suing. 02 54FCT841BT 03 54FCT841CT 1.2.3 Device class desianator. The device class designator shall be a single letter identifying the product assurance level as follows: Device class Device requirements docum

11、entation Vendor sclf-certification to the requirements for non-JAN class B microcircuits in accordance with 1.2.1 of RIL-STD-883 Q or V Certification and qualification to MIL-1-38535 1.2.4 Case outline(s). The case outline(s1 shall be as designated in RIL-STD-1835, and as follows: utline letter Desc

12、riptive designator Terni nals Package style K L 3 GDFP2-F24 or CDFP3-F24 24 Flat package GDIP3-T24 or CDIP4-T24 24 Dual-in-line package CQCCI-NZ8 28 Lcadless-chip-carrier package 1.2.5 Lead finish. lhe lead finish shall be as specified in NIL-STD-883 (see 3.1 herein) for class ki or MIL-1-38535 for

13、classes Q and V. designation is for use in specifications when lead finishes A, B, and c are cansidered acceptable and interchangeable without preference. Finish letter “X“ shall not be mrked on the microcircuit or its packaging. The “X“ Provided by IHSNot for ResaleNo reproduction or networking per

14、mitted without license from IHS-,-,-1.3 Absolute maximum ratinqs. 11 g/ I/ Supply voltage range (V - - - - - - - - - - - - - - - - - Dc input voltage range LIN) - - - - - - - - - - - - - - - - OC output voltage range (V 1 - - - - - - - - - - - - - - - DC input clamp current (I y(VIN = -0.5 V) - - -

15、- - - - - - DC output clamp current (i, (VouT = -0.5 V and +7.0 V) - - DC output source current (I ) per output - - - - - - - - - - DC output sink current (IOLyper output - - - - - - - - - - - DC ground currentCFtND) - - - - - - - - - - - - - - - - - - Storage temperature range (T 1 - - - - - - - -

16、- - - - - - Case temperature under bias !?T:IAs) - - - - - - - - - - - - - Haxiwm power dissipation (PD) - - - - - - - - - - - - - - - Lead temperature (soldering, 10 seconds) - - - - - - - - - - Thermal resistance, junction-to-case (eJc) - - - - - - - - - Junction terperature (TJ) - - - - - - - - -

17、 - - -_- - - - - - 1.4 Recommended weratinq conditions. g/ s/ Supply voltage range (Vc - - - - - - - - - - - - - - - - - input voltage range (v 3 - - - - - - - - - - - - - - - - - - output voltage range td,) - - - - - - - - - - - - - - - - - Maximum low level input voltage (VIL) - - - - - - - - - -

18、- - niniaun high level input voltage (VI 1 - - - - - - - - - - - Case operating temperature range (T !i - - - - - - - - - - - - Maximum input rise and fall rate (kt1AV): (from VIN 0.3 V to 2.7 V, 2.7 v to 0.3 V) - - - - - - - - Maximum high level output current (I ) - - - - - - - - - - - mximum tow

19、levei output current CI:! - - - - - - - - - - - DC Vcc current (I ) - - - - - - - - - - - - - - SIZE STANDARD A MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 REVISION LEVEL 1.5 Digital logic testing for device classes Q and V. 5962-92228 SHEET 3 Fault coverage measurement

20、 of manufacturing logic tests (MIL-STD-883, test method 5012) - - - - - - - - -0.5 V dc to t7.0 V dc -0.5 V dc to Vcc t 0.5 V dc -0.5 V dc to Vcc + 0.5 V dc -20 mA I20 IRA -30 niA +70 mA I260 InA i550 mA -65C to +15OoC -65OC to +13SoC 500 mu +3woc See HI L- STD-I 835 +175“C I_/ 41 t4.5 V dc to +5.5

21、V dc tO.0 V dc to Vcc t0.0 V dc to Vcc 0.8 V 2.0 v -55C to t125“C 5 ns1V -12 niA 32 RA XX percent 51 - 11 Stresses above the absolute maximum rating may cause permanent damage to the device. maximum levels may degrade performance and affect reliability. Unless otherwise noted, all voltages are refer

22、enced to GND. The limits for the parameters specified herein shall apply over the full specified Vcc range and case temperature range of -55C to +125C. $1 For Vcc 2 6.5 V, the upper limit on the range is limited to 7.0 V. - 51 Values will be added when they become available. Extended operation at th

23、e - 21 - 31 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-92228 999999b 00b450b 72b 2. APPLICABLE DOCWENTS 2.1 Government wecification, standards, bulletin, and handbook. Unless otherwise specified, the follouing spec

24、ification, standards, bulletin, and handbook of the issue listed in that issue of the Department of Defense Index of Specifications and Standards specified in the solicitation, form a part of this drawing to the extent specified here in . SPECIFICATION MILITARY HIL-1-38535 - STANDARDS MILITARY HIL-S

25、TD-883 - MIL-STO-973 - MXL-STD-1835 - BULLET IN MILITARY HiL-BUL-103 - HANDBOOK MILITARY MIL-HDBU-780 - Integrated Circuits, Ranufacturing, General Specification for. Test Methods and Procedures for Microelectronics. Configuration Management. Microcircuit Case Outlines List of Standardized Military

26、Drawings (SHOs). Standardized Military Drawings. (Copies of the specifications, standards, bulletin, end handbook required by manufacturers in connection with specific acquisition functions should be obtained from the contracting activity or as directed by the contracting activity.) 2.2 Order of pre

27、cedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing shall take precedence. 3. REQUIREMENTS 3.1 The individual item requirements for device class N shall be in accordance with 1.2.1 of MIL-STD-883, “Provisions for the use of H

28、IL-STD-883 in conjunction with compliant non-JAN devices“ and as specified herein. device manufacturers Quality Hanagement (QM) plan, and as specified herein. Item requirements. The individual item requirements for device classes Q and V shall be in accordance uith MIL-1-38535, the 3.2 Oesian, const

29、ruction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-STD-883 (see 3.1 herein) for device class H and MXL-1-38535 for device classes Q and V and herein. 3.2.1 Case outlines. 3.2.2 Terminal connections. 3.2.3 Truth table. 3.2.4 Loaic diaaram.

30、 The case outlines shall be in accordance with 1.2.4 herein. The terminal connections shall be as specified on figure 1. The truth table shall be as specified on figure 2. The logic diagram shall be as specified on figure 3. 3.2.5 Ground bounce load circuit and waveforms. The ground bounce load circ

31、uit and waveforms shall be as specified on figure 4. 3.2.6 Switchinq waveforms and test circuit. figure 5. The switching waveforms and test circuit shall be as specified on STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 I YE I 1 5962-92228 I REVGION LEVEL I SHEET

32、DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-3.3 Electrical rnrforinance Characteristics and p%Xirradiatian -rameter limits. Unless otherwise specified ierein, the electrical performance characteristics and postirradiation pa

33、rameter limits are as specified in table I 3nd shall apply over the full case operating temperature range. and limits are as specified in table I. 3.4 Electrical test requirements. Test conditions for these specified characteristics The electrical test requirements shall be the subgroups specified i

34、n table If. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. Marking for device class M shall be in accordance with MIL-STD-883 (see 3.1 herein). NIL-BUL-103. In addition, the manufacturers PIN may also be marked

35、as listed in Marking for device classes Q und V shall be in accordance with HlL-i-38535. 3.5.1 Certification/comliance mark. The conpliance nark for device class M shall be a tC“ as required in MIL-STD-883 (see 3.1 herein). in MIL-1-38535. The certification mark for device classes Q and V shall be a

36、 “(;VIL“ or “Q“ as required STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 3.6 Certificate of coaipliance. For device class H, a certificate of compliance shall be required from a nanufzcturer in order to be listed as an approved source of supply in MIL-BUL-103 (s

37、ee 6.7.2 herein). classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.7.1 herein). listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets,

38、 for device class M the requirements of MIL-STD-883 (see 3.1 herein), or for device classes Q and V, the requirements of MIL-1-38535 and the requirements herein. For device The certificate of compliance submitted to DESC-EC prior to 3.7 Certificate of conformance. A certificate of conformance as req

39、uired for device class M in MIL-STD-883 (see 3.1 herein) or for device classes Q and V in HIL-1-38535 shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of chanqe for device class M. For device class fl, notification to DESC-EC of change of product (see 6.2

40、herein) involving devices acquired to this drawing is required for any change as defined in MIL-STD-973. 3.9 Verification and review for device class M. For device class N, DESC, DESCs agent, and the acquiring activity Offshore documentation retain the option to review the manufacturers facility and

41、 applicable required documentation. shall be made available onshore at the option of the reviewer. 3.10 Microcircuit qroup assipnment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 37 (see NIL-1-38535, appendix A). 4. QUALITY ASSURANCE PROVIS

42、IONS 4.1 Sampling and inspection. For device class M, sampling and inspection procedures shall be in accordance with For device classes Q and V, sampling and inspection procedures shall be in accordance MIL-STD-883 (see 3.1 herein). with MIL-1-38535 and the device manufacturers QN plan. 4.2 Screenin

43、q. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. For device classes Q and V, screening shall be in accordance with MIL-1-38535, and shall be conducted on all devices prior to qualif

44、ication and technology conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. SIZE A 5962-92228 REVISION LEVEL SHEET 5 (1) Test condition A, 8, C or D. The test circuit shall be maintained by the manufacturer under document revision level c

45、ontrol and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) TA = +125“C, minimum. b. Interim and final electr

46、ical test parameters shall be as specified in table II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SHD-59b2-92228 9999996 0064508 5T9 D TABLE I. Electrical mrformnce characteristics. 7 vcc - 1.5 v - i.5 v G.5 v Device type Test and NIL-ST

47、D-883 test wthod If Test conditions 2/ 1 5Y*l I I I -55C 5 TC 5 +125OC 4.5 v 5 vcc-5 5.5 v unless otherwise specified VOMI I For all inputs affecting I output under test I 1- I Ilui 1 I cc-o.5 I v 1 Min I 1,2,3 I 3.0 I All iigh level output voltage 3006 I I (3c-0.5 I I I I I 1,2,3 I 2.4 For all inpu

48、ts affecting I OH2 I output under test All All I VIN = V or VIL I VIL = 0.8 V I For all other inputs I VIH = 2% v I VIN = Vcc or GND I IOH = -I2 I I 1,283 1 I I I I I I I I I I I I I I I I I I I 0.20 I v l 0.5 I I VoL1 1 For all inputs affecting I output under test .ow level output voltage 3007 - 4/

49、 I vIN = v or VIL I VIH = 2Y v I VIL = 0.8 v I for all other inputs I VIN = VcC or GND 1 IOL = 300 CUI 1 I IA3 I I I I I I 1 All I 1 For all inputs affecting I outwt under test Vou 4.5 v 5.5 v 5.5 v I IN 1 vr IL I VIL = 0.8 V I For all other irrputs IH I 1 IoL = 32 SA VIN = Vcc or GND 1 l.01 w I I O-O 1 I 1.2 I I 31 1 I Three-state output leakage current high 3021 I, I I VIH = 2.0 v I VIL = 0.8 V I IOZH I OE = VIH Or = CC - 5/ e/ I For all other inputs