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本文(DLA SMD-5962-93099 REV A-2010 MICROCIRCUIT DIGITAL ECL QUAD 4-INPUT OR NOR GATE MONOLITHIC SILICON.pdf)为本站会员(appealoxygen216)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-93099 REV A-2010 MICROCIRCUIT DIGITAL ECL QUAD 4-INPUT OR NOR GATE MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to current requirments. Editorial changes throughout. - gap 10-04-01 Charles F. Saffle REV SHET REV SHET REV STATUS REV A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PREPARED BY Thanh V. Nguyen DE

2、FENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Thanh V. Nguyen APPROVED BY Joseph A. Dupay MICROCIRCUIT, DIGITAL, ECL, QUAD 4-INPUT O

3、R/NOR GATE, MONOLITHIC SILICON DRAWING APPROVAL DATE 93-07-08 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-93099 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E513-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING S

4、IZE A 5962-93099 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A cho

5、ice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 93099 01 M Y X Federal stock cl

6、ass designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the a

7、ppropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device ty

8、pe Generic number Circuit function 01 10E501 Quad 4-input OR/NOR gate 02 100E501 Quad 4-input OR/NOR gate, temperature compensated 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements docume

9、ntation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and

10、 as follows: Outline letter Descriptive designator Terminals Package style Y See figure 1 28 Quad flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or

11、networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93099 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VEE) 2/ -8.0 V dc to 0.0 V dc Input voltage

12、 range (VIN) 2/ . -6.0 V dc to 0.0 V dc Minimum input swing (VPP) . 0.150 V dc Output current (IOUT) Continuous . 50 mA Surge . 100 mA Storage temperature range -65C to +165C Lead temperature (soldering, 10 seconds) . +300C Junction temperature (TJ) . +165C Maximum power dissipation (PD): Device typ

13、e 01 . 195 mW Device type 02 . 220 mW Thermal resistance, junction-to-case (JC) . 1.23C/W 1.4 Recommended operating conditions. Supply voltage range (VEE): 2/ Device type 01 . -5.46 V dc to -4.94 V dc Device type 02 . -5.46 V dc to -4.20 V dc Input voltage range (VIN): 2/ Device type 01 . -1.950 V d

14、c to -0.660 V dc Device type 02 . -1.810 V dc to -0.880 V dc Output voltage range (VOUT): 2/ Device type 01 . -1.972 V dc to -0.672 V dc Device type 02 . -1.810 V dc to -0.880 V dc Input rise and fall times, 20% to 80% (tr, tf) 500 ps maximum Case operating temperature range (TC) . -55C to +125C 2.

15、APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DE

16、PARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL

17、-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.

18、) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Ratings apply when referenced to VCC= 0.0 V dc. Provided by IHSNot for ResaleNo reproduction or networking permitted

19、 without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93099 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein,

20、the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-P

21、RF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, ap

22、pendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device cla

23、ss M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.4 Logic diagram. The logic diagram sha

24、ll be as specified on figure 4. 3.2.5 Test circuit and switching waveforms. The test circuit and switching waveforms shall be as specified on figure 5. 3.2.6 Inner-layer dielectric. Polyimide and silicon coatings are allowed as part of the wafer fabrication process provided that each microcircuit in

25、spection lot (see MIL-PRF-38535, “Inspection lot - class B“) shall be subjected to and pass the internal water vapor content test in accordance with group D6 of test method 5005 of MIL-STD-883. The frequency of the internal water vapor testing may not be decreased unless approved by the preparing ac

26、tivity. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4

27、Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked.

28、For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in acco

29、rdance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a

30、“C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of

31、compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product

32、meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M

33、in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any cha

34、nge that affects this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93099 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical

35、 performance characteristics. Test SymbolConditions -55C TC +125C unless otherwise specified Group A subgroups Device type Limits 1/ Unit Min Max High level input voltage VIH-5.46 V VEE -4.94 V for type 01 -5.46 V VEE -4.20 V for type 02 1 2 3 01 -1.130 -1.020 -1.258 -0.810 -0.660 -0.906 V 1, 2, 3 0

36、2 -1.165 -0.880 Low level input voltage VIL1, 3 2 01 -1.950 -1.950 -1.480 -1.421 V 1, 2, 3 02 -1.810 -1.475 High level output voltage VOHVCC= VCCO= GND VIN= VIHmaximum, VILminimum Outputs terminated through 50 to -2.0 V. VEE= -4.94 V 1 2 3 01 -0.980 -0.862 -1.097 -0.810 -0.672 -0.906 V EE= -4.20 V 1

37、, 2 3 02 -1.025 -1.097 -0.880 -0.880 Low level output voltage VOLVEE= -5.46 V 1 2 3 01 -1.950 -1.934 -1.972 -1.630 -1.579 -1.652 V 1, 2 3 02 -1.810 -1.810 -1.620 -1.600 High level threshold output voltage VOHTVCC= VCCO= GND VIN= VIHminimum, VILmaximum Outputs terminated through 50 to -2.0 V. VEE= -5

38、.46 V 1 2 3 01 -0.980 -0.862 -1.097 -0.810 -0.672 -0.906 V 1, 2 3 02 -1.025 -1.097 -0.880 -0.880 Low level threshold output voltage VOLTVEE= -4.94 V 1 2 3 01 -1.950 -1.934 -1.972 -1.630 -1.579 -1.652 V EE= -4.20 V 1, 2 3 02 -1.810 -1.810 -1.620 -1.600 Power supply drain current IEEVCC= VCCO= GND, VE

39、E= -5.46 V VIN= VIHmaximum Outputs terminated through 50 to -2.0 V 1, 2, 3 01 -36 mA 1, 3 2 02 -36 -42 High level input current IIHVCC= VCCO= GND VEE= -4.94 V for type 01 = -4.20 V for type 02 VIN= VIHmaximum, VILminimum Outputs terminated through 50 to -2.0 V 1, 2, 3 All 10 150 A Low level input cu

40、rrent IILVCC= VCCO= GND, VEE= -5.46 V VIN= VIHmaximum, VILminimum Outputs terminated through 50 to -2.0 V 1, 2, 3 All 0.5 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93099

41、 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TC +125C unless otherwise specified Group A subgroups Device type Limits 1/ Unit Min Max Functional test S

42、ee 4.4.1b, VCC= VCCO= GND VEE= -4.94 V, -5.46 V for type 01 = -4.20 V, -5.46 V for type 02 7, 8 All Propagation delay time, Dna-d to Qn or Q%n (single ended) tPLH, tPHLSee figure 5 9 10 11 01 175 125 175 625 915 525 ps 9 10 11 02 95 95 95 725 915 705 Output transition time tTLH, tTHL9 10 11 01 275 2

43、75 275 600 635 600 ps 9, 10, 11 02 275 625 1/ The limits are determined after a device has reached thermal equilibrium. This is defined as the reading taken with the device in a socket with 500 LFPM of +125C or -55C (as applicable) air blowing on the unit in a transverse direction with power applied

44、 for at least four minutes before the reading is taken. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93099 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 A

45、PR 97 Case Y Dimension Millimeters Inches Min Max Min Max D1/E1 8.89 10.16 .350 .400 A 1.52 2.03 .060 .080 b 0.36 0.48 .014 .019 e 1.27 BSC .050 BSC Q 0.89 1.09 .035 .043 c 0.10 0.18 .004 .007 L 7.49 8.38 .295 .330 D/E 23.88 25.65 .940 1.010 NOTES: 1. The preferred unit of measurement is millimeters

46、. However, this item was designed using inch-pound units of measurement. In case of problems involving conflicts between the metric and inch-pound units, the inch-pound units shall rule. 2. Dimensions D1 and E1 allow for lid misalignment and glass meniscus. 3. Dimension Q shall be measured at the po

47、int of exit of the lead from the body. 4. Lead number 1 is identified by a tab located on the lead. 5. Dimension c includes solder lead finish. 6. Lead numbers are shown for reference only and do not appear on package. FIGURE 1. Case outline. Provided by IHSNot for ResaleNo reproduction or networkin

48、g permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93099 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 Device type All Case outline Y Terminal number Terminal symbol 1 VEE2 D2a3 D1d 4 D1c5 D1b 6 D1a7 D0d 8 D0c9 D0b 10 D0a11 VCCO12 Q0 13 Q%0 14 Q1 15 Q%1 16 VCC17 Q2 18 Q%2 19 Q3 20 Q%3 21 VCCO22 D3d23 D3c 24 D3b25 D3a 26 D2d27 D2c 28 D2bFIGURE 2. Terminal connections. Provided by IHSNot for ResaleNo reproduc

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