DLA SMD-5962-93124 REV C-2011 MICROCIRCUIT MEMORY DIGITAL CMOS 2K X 9 PARALLEL FIFO MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Update drawing to reflect current requirements. Editorial changes throughout. - gap 01-05-04 Raymond Monnin B Added case outline Z. Updated boiler plate paragraphs. ksr 05-05-02 Raymond Monnin C Boilerplate update, part of 5 year review. ksr 11-0

2、1-20 Charles F. Saffle REV SHET REV C C C C C C C C C C C C C C C SHEET 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Tuan Nguyen DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.

3、dscc.dla.mil STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 2K X 9 PARALLEL FIFO, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-10-29 A

4、MSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-93124 SHEET 1 OF 29 DSCC FORM 2233 APR 97 5962-E163-11 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93124 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-399

5、0 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected i

6、n the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 93124 01 M X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device

7、 class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the

8、MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function Access time 01 7C453 2K x 9 Cascada

9、ble Clocked FIFO 30 ns 02 7C453 2K x 9 Cascadable Clocked FIFO 20 ns 03 7C453 2K x 9 Clocked FIFO 14 ns 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certi

10、fication to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter

11、 Descriptive designator Terminals Package style X See figure 1 32 Dual-in-line Y CQCC1-N32 32 Rectangular leadless chip carrier Z See figure 1 32 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class

12、M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93124 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range to

13、 ground potential (VCC) . -0.5 V dc to +7.0 V dc DC voltage applied to the outputs in the high Z state -0.5 V dc to +7.0 V dc DC input voltage . -3.0 V dc to +7.0 V dc Maximum power dissipation 0.825 W Lead temperature (soldering, 10 seconds) +260C Thermal resistance, junction-to-case (JC): Case X a

14、nd Z 11C/W Case Y See MIL-STD-1835 Junction temperature (TJ) +175C Storage temperature range . -65C to +150C Temperature under bias -55C to +125C 1.4 Recommended operating conditions. Supply voltage (VCC) . +4.5 V dc minimum to +5.5 V dc maximum Ground voltage (GND) 0 V dc Input high voltage (VIH) 2

15、2 V dc minimum Input low voltage (VIL) . 0.8 V dc maximum Case operating temperature range (TC) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified her

16、ein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microc

17、ircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksear

18、ch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of the documents are the

19、issues of the documents cited in the solicitation. ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the JEDEC Office, 3103 North 10th Street, Arlington, VA 22201-2107; http:/www.jedec.org.) (Non-Government standard

20、s and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and th

21、e references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operatio

22、n at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93124 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM

23、 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect

24、the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physic

25、al dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections sh

26、all be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits a

27、re as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be m

28、arked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this optio

29、n, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be

30、 a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supp

31、ly to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-

32、VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conform

33、ance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without licen

34、se from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93124 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C 4.5 V VCC 5.5 V Group A subgroups Device type Limit Uni

35、t unless otherwise specified Min Max Output high voltage VOHVCC= 4.5 V, IOH= -2.0 mA VIN= VIH(Min), VIL(Max) 1, 2, 3 All 2.4 V Output low voltage VOLVCC= 4.5 V, IOL= 8.0 mA VIN= VIH(Min), VIL(Max) 1, 2, 3 All 0.4 V Input high voltage 1/, 2/ VIH1, 2, 3 All 2.2 V Input low voltage 1/, 2/ VIL1, 2, 3 Al

36、l 0.8 V Input leakage current IIXVCC= Max 1, 2, 3 All -10 +10 A Output leakage current IOZOE VIHVOUT= VSSto VCC1, 2, 3 All -10 +10 A Power supply current 3/ ICC1VCC= 5.5 V, IOUT= 0 mA, 1, 2, 3 01 110 mA IN= 0 to 3.0 V 02 130 03 150 Power supply current 4/ ICC2VCC= 5.5 V, IOUT= 0 mA, VIN= 0 to 3.0 V

37、1, 2, 3 All 80 mA Standby current 5/ ICC3VCC= 5.5 V, IOUT= 0 mA, All inputs = VCC1, 2, 3 All 30 mA Input capacitance 6/ CINVCC= 5.0 V, T = 25C, f = 1 MHz, (see 4.4.1e) 4 All 10 pF Output capacitance 6/ COUTVCC= 5.0 V, T = 25C, f = 1 MHz (see 4.4.1e) 4 All 12 pF Functional testing 7/ See 4.4.1c 7, 8A

38、 8B All Write clock cycle tCKWSee figures 4 and 5 9, 10, 11 01 30 ns 8/ 02 20 03 14 Read clock cycle tCKR9, 10, 11 01 30 ns 02 20 03 14 Clock high tCKH9, 10, 11 01 12 ns 02 9 03 6.5 See footnotes at end of table Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr

39、om IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93124 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TC +125C 4.5 V VCC 5.5 V Group A subgroups Device type Li

40、mit Unit unless otherwise specified Min Max Clock low tCKLSee figures 4 and 5 9, 10, 11 01 12 ns 8/ 02 9 03 6.5 Data access time 9/ tA9, 10, 11 01 20 ns 02 15 03 10 Previous output data hold after read high tOH9, 10, 11 All 0 ns Previous flag hold after read/write high tFH9, 10, 11 All 0 ns Data set

41、up tSD9, 10, 11 01 12 ns 02 9 03 7 Data hold tHD9, 10, 11 All 0 ns Enable set-up tSEN9, 10, 11 01 12 ns 02 9 03 7 Enable hold tHEN9, 10, 11 All 0 ns OE low to output data valid tOE9, 10, 11 01 20 ns 10/ 02 15 03 10 OE low to output data in low Z 6/, 10/ tOLZ9, 10, 11 All 0 ns OE high to output data

42、 in tOHZ9, 10, 11 01 20 ns high Z 6/, 11/, 12/ 02 15 03 10 Read high to parity tPG9, 10, 11 01 20 ns generation 02 15 03 10 Read high to parity error tPE9, 10, 11 01 20 ns flag 02 15 03 10 Flag Delay tFD9, 10, 11 01 20 ns 02 15 03 10 See footnotes at end of table. Provided by IHSNot for ResaleNo rep

43、roduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93124 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions -55C TC +1

44、25C 4.5 V VCC 5.5 V Group A subgroups Device type Limit Unit unless otherwise specified Min Max Opposite clock after clock 13/ tSKEW1See figures 4 and 5 8/ 9,10,11 All 0 ns Opposite clock before clock tSKEW29,10,11 01 30 ns 14/ 02 20 03 14 Master preset pulse width tPMR9,10,11 01 30 ns ( MR low) 02

45、20 03 14 Last valid clock low set-up to MR low tSCMR9,10,11 All 0 ns Data hold from MR low tOHMR9,10,11 All 0 ns Master reset recovery ( MR tMRR9,10,11 01 30 ns high set-up to first 02 20 enabled write/read) 03 14 MR high to flags valid tMRF9,10,11 01 30 ns 02 20 03 14 MR high to data outputs low tA

46、MR9,10,11 01 30 ns 02 20 03 14 Program mode - MR low tSMRP9,10,11 01 30 ns set-up 02 20 03 14 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93124 DLA LAND AND MARITIME COLUMBU

47、S, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions -55C TC +125C 4.5 V VCC 5.5 V Group A subgroups Device type Limit Unit unless otherwise specified Min Max Program mode - MR low hold tHMRPSee figures

48、4 and 5 8/ 9,10,11 01 25 ns 02 15 03 10 Program Mode - write high to tFTP9,10,11 01 30 ns read high 02 20 03 14 Program mode - data access tAP9,10,11 01 30 ns time 02 20 03 14 Program mode - data hold time tOHP9,10,11 All 0 ns from MR high 1/ These are absolute values with respect to device ground and all overshoots due to system or tester noise are included. 2/ T