DLA SMD-5962-93166 REV B-2007 MICROCIRCUIT MEMORY DIGITAL CMOS POWER SWITCHED 32K x 8-BIT PROM MONOLITHIC SILICON《硅单片 32K X 8位功率转换可编程序只读存储器 氧化物半导体数字记忆微型电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R027-94. 93-11-05 Michael A. Frye B Boilerplate update, part of 5 year review. ksr 07-03-05 Joseph Rodenbeck REV SHET REV B B SHET 15 16 REV STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7

2、8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gary L. Gross DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeffery D. Bowling COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL APPROVED BY Michael A. Frye DEPARTMENTS AND AGENCIES OF THE DEPAR

3、TMENT OF DEFENSE DRAWING APPROVAL DATE 93-04-09 MICROCIRCUIT, MEMORY, DIGITAL, CMOS, POWER SWITCHED, 32K x 8-BIT PROM, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-93166 SHEET 1 OF 16 DSCC FORM 2233 APR 97 5962-E210-07 Provided by IHSNot for ResaleNo reproduction or netwo

4、rking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93166 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliab

5、ility (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN

6、 is as shown in the following example: 5962 - 93166 01 Q Y C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA mark

7、ed devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device

8、 type(s). The device type(s) identify the circuit function as follows: Device type Generic number 1/ Circuit function Access time 01 32K x 8 PROM 55 ns 02 32K x 8 PROM 45 ns 03 32K x 8 PROM 35 ns 04 32K x 8 PROM 55 ns 05 32K x 8 PROM 45 ns 06 32K x 8 PROM 35 ns 1.2.3 Device class designator. The dev

9、ice class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or

10、V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X GDIP4-T28 or CDIP3-T28 28 Dual-in-line Y GDFP2-F28 28 Flat pack Z CQCC1-N32 32 Rectangular l

11、eadless chip carrier U GDIP1-T28 or CDIP2-T28 28 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at

12、 the end of this document and will also be listed in QML-38535 and MIL-HDBK-103 (see 6.6 herein). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93166 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990

13、 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 2/ Supply voltage range - -0.5 V dc to +7.0 V dc DC voltage applied to outputs in high Z state - -0.5 V dc to +7.0 V dc DC input voltage - -3.0 V dc to +7.0 V dc DC program voltage- 13.0 V dc Maximum power dissipation (PD)

14、 - 1.0 W 3/ Lead temperature (soldering, 10 seconds maximum) - +260C Thermal resistance, junction-to-case (JC) - See MIL-STD-1835 Junction temperature (TJ)- +175C Storage temperature range- -65C to +150C Temperature under bias- -55C to +125C Data Retention- 10 years (minimum) 1.4 Recommended operati

15、ng conditions. Supply voltage (VCC) - 4.5 V dc to 5.5 V dc Ground voltage (GND)- 0.0 V DC Input high voltage (VIH) - 2.0 V dc minimum Input Low voltage (VIL) - 0.8 V dc maximum Case operating temperature range (TC) - -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and

16、handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circu

17、its, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 -

18、 Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The

19、following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192-00 - Standard Guide for the Measurement of Single Ev

20、ent Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) 2/ Stresses above the absolute maximum rating may ca

21、use permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ Must withstand the added PDdue to short circuit test e.g.; IOS. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD M

22、ICROCIRCUIT DRAWING SIZE A 5962-93166 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Industr

23、ies Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other informati

24、onal services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained

25、. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, f

26、it, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensio

27、ns shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on

28、 figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.3.1 Unprogrammed devices. The truth table for unprogrammed devices for contracts involving no altered item drawing shall be as specified on figure 2 herein. When required in screening (see 4.2 herein) or qualificati

29、on conformance inspection groups A, B, C, or D (see 4.4 herein), the devices shall be programmed by the manufacturer prior to test. A minimum of 50 percent of the total number of cells shall be programmed or at least 25 percent of the total number of cells to any altered item drawing. 3.2.3.2 Progra

30、mmed devices. The truth tables for programmed devices shall be as specified by an attached altered item drawing. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation paramete

31、r limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part

32、shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using

33、this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and

34、V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93166 DE

35、FENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Limit Test Symbol Conditions -55C TC +125C 4.5 V VCC 5.5 V unless otherwise specified Group A subgroups Device type Min Max Unit Output high voltage

36、VOHVCC= 4.5 V, IOH= -2.0 mA, VIN= VIH, VIL1,2,3 All 2.4 V Output low voltage VOLVCC= 4.5 V, IOL= 6.0 mA, VIN= VIH, VIL0.4 Input high voltage 1/ VIH2.0 Input low voltage 1/ VIL0.8 Input leakage current IIXGND VIH, IOUT= 0 mA, VIN= 2.0 V 40 Input capacitance 3/ CINVCC= 5.0 V, T = 25C, f = 1 MHz, (see

37、4.4.1c) 4 10 pF Output capacitance 3/ COUTVCC= 5.0 V, T = 25C, f = 1 MHz (see 4.4.1c) 4 10 Functional testing See 4.4.1d 7,8A,8B See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-

38、93166 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Limit Unit Symbol Conditions -55C TC +125C 4.5 V VCC 5.5 V unless otherwise specified Group A subgroups Device type Min Max Ad

39、dress to output valid tAASee figures 3 and 4, and note 6/ 9,10,11 01,04 55 ns 02,05 45 03,06 35 Chip select inactive to high Z ( CS1and CS2only) 3/ 7/ tHZCS9,10,11 01,02 30 ns 03 25 Output enable inactive to high Z 3/ 7/ tHZOE04 30 05,06 25 Chip select active to output valid ( CS1and CS2only) tACS01

40、,02 30 03 25 Output enable active to output valid tOE04 30 05,06 25 Chip enable inactive to high Z ( CE only) 3/ 7/ tHZCE01,04 60 02,05 50 03,06 40 Chip enable active to output valid ( CE only) tACE01,04 60 02,05 50 03,06 40 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction

41、 or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93166 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Limit Unit Test Symbol Conditions -

42、55C TC +125C 4.5 V VCC 5.5 V unless otherwise specified Group A subgroups Device type Min Max Chip enable active to power up 3/ tPUALL 0 Chip enable inactive to power down 3/ tPD01,04 60 02,05 50 03,06 40 Output hold from address change 3/ tOHALL 0 1/ These are absolute values with respect to device

43、 ground and all overshoots and undershoots due to system or tester noise are included. 2/ For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed thirty seconds. 3/ Tested initially and after any design or process changes that affect tha

44、t parameter, and therefore shall be guaranteed to the limits specified in table I. 4/ At f = fMAX, the inputs are switching at 1/tAA. 5/ Devices 01-03 CE = 0.0 V, CS1= 3.0 V, CS2= 0.0 V; devices 04-06 CE = 0.0 V, OE = 3.0 V. 6/ AC tests are performed with input rise and fall times of 5 ns or less, t

45、iming reference levels of 1.5 V, input pulse levels of 0 to 3.0 V, and the output load on figure 3, circuit A. 7/ Transition is measured at steady-state high level -500 mV or steady-state low level +500 mV on the output from the 1.5 V level on the input with the output load on figure 3, circuit B. 3

46、.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitt