DLA SMD-5962-93212 REV A-2008 MICROCIRCUIT LINEAR MICROPOWER DC-TO-DC CONVERTER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Redraw. Update drawing to current requirements. - drw 08-10-31 Robert M. Heber REV SHET REV SHET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY Rick C. Officer CHECKED BY Charles E. Besore DEFENSE SUP

2、PLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY Michael A. Frye STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-08-23 MICROCIRCUIT, LINEAR, MICROPOWER DC-TO-DC CONVE

3、RTER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-93212 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E042-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93212 DEFENSE SUPPLY CENTE

4、R COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishe

5、s are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 93212 01 M P A Federal stock class designator RHA designator (see 1.

6、2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device cl

7、ass M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type. The device type identifies the circuit function as follows: Device type Generic number Circuit function 01 LT

8、1111 Micropower DC-to-DC converter 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class

9、 level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline. The case outline is as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in

10、-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93212 DEFE

11、NSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VIN) . 36 V SW1 pon voltage (VSW1). 50 V SW2 pin voltage (VSW2) -0.5 V to VINFeed back pin voltage 5.5 V Switch current 1.5 A Power dissipation (PD) .

12、500 mW Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds). +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) 100C/W 1.4 Recommended operating conditions. Supply voltage (VIN) . 3 V Ambient operating temperatu

13、re range (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in t

14、he solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPA

15、RTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D

16、, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption h

17、as been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAND

18、ARD MICROCIRCUIT DRAWING SIZE A 5962-93212 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as speci

19、fied herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN

20、class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outl

21、ine. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance chara

22、cteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are d

23、efined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “596

24、2-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The cer

25、tification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required fr

26、om a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificat

27、e of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and

28、herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. F

29、or device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain t

30、he option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit g

31、roup number 110 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93212 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TA

32、BLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C Group A subgroups Device type Limits 1/ Unit unless otherwise specified Min Max Input voltage VINStep up mode 1, 2, 3 01 2.0 12.6 V Step down mode 30 Quiescent current IQSwitch off 1 01 400 A 2, 3 500 Comparator trip

33、 point voltage 2/ 1, 2, 3 01 1.20 1.30 V Comparator hysteresis 1, 2, 3 01 12.5 mV Sw saturation voltage, step up mode VSATVIN= 3.0 V, ISW1and ISW2= 500 mA 1, 2 01 0.65 V VIN= 3.0 V, ISW1and ISW2= 400 mA 3 Sw saturation voltage, step down mode VSATVIN= 12 V, ISW1and ISW2= 500 mA 1, 2 01 1.5 V 3 2.0 F

34、eedback pin bias current IFBVFB= 0 V 1, 2, 3 01 120 nA Set pin bias current ISETVSET= VREF1, 2, 3 01 300 nA Gain block output low voltage VOLISINK= 300 A, VSET= 1.00 V 1, 2, 3 01 0.4 V Reference line regulation VIN= 5 V to 30 V 1, 2, 3 01 0.4 %/V IN= 2 V to 5 V 1, 2 0.8 IN= 2.4 V to 5 V 3 0.8 Block

35、gain AVRL= 300 k 3/ 1, 2, 3 01 1000 V/V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93212 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 D

36、SCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions -55C TA +125C Group A subgroups Device type Limits 1/ Unit unless otherwise specified Min Max Switch off leakage current Measured at SW1 pin, VSW1= 12 V, TA= +25C 1 01 10 A Maximum excursion belo

37、w ground ISW1 10 A, switch off, TA= +25C 1 01 -350 mV Oscillator frequency fOSC4 01 54 88 kHz 5, 6 45 100 Duty cycle Full load 4 01 43 59 % 5, 6 40 62 Switch on time tONILIMtied to VIN9 01 5 9 s 10, 11 11 1/ The limiting terms “min” (minimum) and “max” (maximum) shall be considered to apply to magni

38、tudes only. Negative current shall be defined as conventional current flow out of a device terminal. 2/ This test guarantees that both the high and low trip points of the comparator fall within 1.20 V to 1.30 V range. 3/ A 100 k resistor connected between a 5 V source and the AO pin. Provided by IHS

39、Not for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93212 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outline P Terminal number Terminal symbol 1 I

40、LIM2 VIN3 SW1 4 SW2 5 GND 6 AO 7 SET 8 FB (SENSE) FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93212 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL

41、A SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not aff

42、ect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prio

43、r to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of

44、 MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissip

45、ation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test cond

46、ition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance

47、with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical

48、 test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4