DLA SMD-5962-93225 REV A-2009 MICROCIRCUIT MEMORY DIGITAL CMOS 64K X 4 SRAM MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Updated document to current requirements, and updating contact information and agency address. ksr 09-07-13 Charles F. Saffle REV SHET REV A A A A A A SHEET 15 16 17 18 19 20 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6

2、7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Jeff Bowling DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL APPROVED BY Michael A. Frye MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 64K X

3、 4 SRAM, MONOLITHIC SILICON DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-04-08 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-93225 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E391-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without l

4、icense from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93225 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q a

5、nd M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the follo

6、wing example: 5962 - 93225 01 Q X C Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-P

7、RF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type

8、(s) identify the circuit function as follows: Device type Generic number 1/ Circuit function Access time 01 64K X 4 CMOS SRAM with OE 45 ns 02 64K X 4 CMOS SRAM with OE 35 ns 03 64K X 4 CMOS SRAM with OE 25 ns 04 64K X 4 CMOS SRAM with OE 20 ns 1.2.3 Device class designator. The device class designa

9、tor is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification a

10、nd qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDIP3-T28 or GDIP4-T28 28 dual-in-line Y CQCC4-N28 28 rectangular leadless chip carrier Z GDFP2-F28 28 flat p

11、ack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also be listed in QML-3

12、8535 and MIL-HDBK-103 (see 6.6 herein). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93225 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolu

13、te maximum ratings. 2/ - Voltage on any input relative to VSSrange - -0.5 V dc to +7.0 V dc - Voltage applied to outputs range - -0.5 V dc to +6.0 V dc - Storage temperature range - -65C to +150C - Maximum power dissipation (PD) - 1.0 W - Lead temperature (soldering, 10 seconds) - +260C - Thermal re

14、sistance, junction-to-case (JC) - See MIL-STD-1835 - Junction temperature (TJ) - +150C 3/ 1.4 Recommended operating conditions. - Supply voltage range (VCC) - 4.5 V dc to 5.5 V dc - Supply voltage range (VSS) - 0 V dc - Input high voltage range (VIH) - 2.2 V dc to VCC +0.5 V dc - Input low voltage r

15、ange (VIL) - -0.5 V dc to + 0.8 V dc 4/ - Case operating temperature range (TC) - -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless oth

16、erwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-ST

17、D-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the

18、Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the

19、 solicitation. AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM) ASTM Standard F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to: ASTM Internationa

20、l, PO Box C700, 100 Barr Harbor Drive, West Conshohocken, PA 19428-2959; http:/www.astm.org.) 2/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. 3/ Stresses above the absolute maximum r

21、ating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 4/ VILminimum = -3.0 V dc for pulse width less than 20 ns. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDA

22、RD MICROCIRCUIT DRAWING SIZE A 5962-93225 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should be addressed to the Electronics Ind

23、ustries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in or through libraries or other infor

24、mational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obta

25、ined. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the for

26、m, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dime

27、nsions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specif

28、ied on figure 1. 3.2.3 Truth table(s). The truth table shall be as specified on figure 2. 3.2.4 Die overcoat. Polyimide and silicone coatings are allowable as an overcoat on the die for alpha particle protection only. Each coated microcircuit inspection lot (see inspection lot as defined in MIL-PRF-

29、38535) shall be subjected to and pass the internal moisture content test at 5000 ppm (see method 1018 of MIL-STD-883). The frequency of the internal water vapor testing shall not be decreased unless approved by the preparing activity for class M. The TRB will ascertain the requirements as provided b

30、y MIL-PRF-38535 for classes Q and V. Samples may be pulled any time after seal. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in tabl

31、e I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN list

32、ed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator s

33、hall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as requ

34、ired in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements

35、of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved sourc

36、e of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. Provided by IHSNot for ResaleNo reproduction or networking permitt

37、ed without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93225 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535

38、 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing

39、is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made a

40、vailable onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 41 (see MIL-PRF-38535, appendix A). 3.10.1 Unprogrammed device delivered to the user. All testing shall be verif

41、ied through group A testing as defined in 3.2.3.1 and table I. It is recommended that users perform subgroups 7 and 9 after programming to verify the specific program configuration. 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be i

42、n accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535,

43、appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and sh

44、all be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Delete the sequence specified as initial (preburn-in) electrical parameters through interim (postburn-in) electrical parameters of method 5004 and substitute lines 1 through 6 of

45、 table IIA herein. b. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in a

46、ccordance with the intent specified in method 1015. (1) Dynamic burn-in (method 1015 of MIL-STD-883, test condition D; for circuit, see 4.2.1b herein). c. Interim and final electrical test parameters shall be as specified in table IIA herein. 4.2.2 Additional criteria for device classes Q and V. a.

47、The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquirin