DLA SMD-5962-93251 REV B-2008 MICROCIRCUIT LINEAR WIDEBAND TWO QUADRANT ANALOG MULTIPLIER MONOLITHIC SILICON《微电路 线性宽带宽单片两象限模拟乘法器》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R289-94. 94-10-17 M. A. Frye B Incorporate revision A NOR. Update drawing to current requirements. - drw 08-03-13 Robert M. Heber REV SHET REV SHET REV STATUS REV B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5

2、 6 7 8 9 10 11 PMIC N/A PREPARED BY Rick C. Officer DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Charles E. Besore COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, WIDEBA

3、ND, TWO QUADRANT ANALOG MULTIPLIER, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 93-09-07 MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-93251 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E272-08 Provided by IHSNot for ResaleNo reproduction or networking perm

4、itted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93251 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (dev

5、ice classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as sho

6、wn in the following example: 5962 - 93251 01 M E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices m

7、eet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type. The d

8、evice type identifies the circuit function as follows: Device type Generic number Circuit function 01 HA-2546 Two quadrant analog multiplier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requireme

9、nts documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-18

10、35 as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device cla

11、ss M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93251 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply volt

12、age (VS) 35 V Differential input voltage (VID) 6 V Output current (IOUT). 60 mA Power dissipation (PD): Case E 1.31 W 2/ Case 2 1.42 W 2/ Lead temperature (soldering, 10 seconds). +275C Junction temperature (TJ). +175C Storage temperature range -65C to +150C Thermal resistance, junction-to-ambient (

13、JA): Case E 78C/W Case 2 70C/W Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 1.4 Recommended operating conditions. Supply voltage range (VS) 8 V to +15 V Operating ambient temperature range (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handboo

14、ks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Ma

15、nufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standa

16、rd Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a

17、conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause

18、 permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Derating factor above TA= +75C for case E is 13.1 mW/C and for case 2 is 14.2 mW/C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I

19、HS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93251 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535

20、and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A

21、for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2

22、.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical per

23、formance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each

24、subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not ma

25、rking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance

26、 mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall

27、be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein).

28、The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, a

29、ppendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for dev

30、ice class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring act

31、ivity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in

32、microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93251 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM

33、2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min MaxInput offset voltage VIOVCM= 0 V for (VY) pins 1 01 -10 +10 mV 2, 3 -15 +15 CM= 0 V for (VX) pins 1 -2 +2 2, 3 -15 +15 (

34、VZ) pins, VXpins = 0 V, VYpins = 0 V 1, 2, 3 -15 +15 Input bias current IIBVCM= 0 V for (VY) pins 1 01 -15 +15 A 2, 3 -20 +20 VCM= 0 V for (VX) pins 1 -2 +2 2, 3 -5 +5Input offset current IIOVCM= 0 V for (VY) pins 1 01 -2 +2 A 2, 3 -3 +3VCM= 0 V for (VX) pins 1 -2 +2 2, 3 -3 +3Common mode rejection

35、ratio +CMRR VY= 0 V to +5 V, VX= +2 V (VY) pins 1, 2, 3 01 60 dB -CMRR VY= 0 V to +5 V, VX= +2 V (VY) pins 60 Common mode voltage range +CMR VY= 0 V to +5 V 1, 2, 3 01 5 V -CMR VY= 0 V to -5 V -5 Output voltage swing +VOUTVY= +5 V, VX= +2.5 V 1, 2, 3 01 5 V -VOUTVY= -5 V, VX= +2.5 V -5 Output curren

36、t +IOUTVY= +5 V, VX= +2.5 V 1, 2, 3 01 20 mA -IOUTVY= -5 V, VX= +2.5 V -20 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93251 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43

37、218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min MaxPower supply rejection ratio +PSRR VS= 3 V, +V = +15 V, -V = -15

38、 V, +V = +12 V, -V = -15 V, 1, 2, 3 01 58 dB -PSRR VS= 3 V, +V = +15 V, -V = -15 V, +V = +15 V, -V = -12 V, 58 Quiescent power supply current +ICCVX= VY= 0 V, IOUT= 0 mA 1, 2, 3 01 29 mA -ICCVX= VY= 0 V, IOUT= 0 mA -29 Multiplication error ME VY= 5 V 1 01 -3 +3 %FS 2, 3 -5 +5Scale factor error SF GA

39、 B pin shorted to GA C pin 1, 2, 3 01 -5 +5 % Slew rate +SR VOUT= -5 V to +5 V 3/, 4/ 4, 5, 6 01 300 V/s -SR VOUT= +5 V to -5 V 3/, 4/ 300 Overshoot 3/ +OS VOUT= -100 mV to +100 mV 4, 5, 6 01 30 % -OS VOUT= +100 mV to -100 mV 30 Full power bandwidth FPBW VPEAK= 5 V 3/, 5/ 4, 5, 6 01 9.5 MHz Rise and

40、 fall time tRVOUT= -100 mV to +100 mV 3/, 4/ 9 01 15 ns 10, 11 17 tFVOUT= +100 mV to -100 mV 3/, 4/ 9 15 10, 11 17 1/ Unless otherwise specified, VS= 15 V, load resistance (RL) = 1 k, and capacitance load (CL) = 50 pF. 2/ The limiting terms “min” (minimum) and “max” (maximum) shall be considered to

41、apply to magnitudes only. Negative current shall be defined as conventional current flow out of a device terminal. 3/ If not tested, shall be guaranteed to the limits specified under table I herein. 4/ Measured between 10% to 90% points. 5/ Full power bandwidth value is based the following equation:

42、 FPBW = Slew rate/(2VPEAK). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93251 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case ou

43、tline E 2 Terminal number Terminal symbol 1 GND NC 2 VREFGND 3 VYIOB VREF4 VYIOA VYIOB 5 VY+ VYIOA 6 VY- NC 7 -VSVY+ 8 VOUT Y- 9 VZ+ -VS10 VZ- VOUT11 +VSNC 12 VX- VZ+ 13 VX+ VZ- 14 GA B +VS15 GA C VX- 16 GA A NC 17 - - - VX+ 18 - - - GA B 19 - - - GA C 20 - - - GA A NC = No connection FIGURE 1. Term

44、inal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-93251 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and

45、 inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device c

46、lass M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For de

47、vice class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit

48、 shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a