ImageVerifierCode 换一换
格式:PDF , 页数:13 ,大小:90.69KB ,
资源ID:700434      下载积分:10000 积分
快捷下载
登录下载
邮箱/手机:
温馨提示:
如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
如填写123,账号就是123,密码也是123。
特别说明:
请自助下载,系统不会自动发送文件的哦; 如果您已付费,想二次下载,请登录后访问:我的下载记录
支付方式: 支付宝扫码支付 微信扫码支付   
注意:如需开发票,请勿充值!
验证码:   换一换

加入VIP,免费下载
 

温馨提示:由于个人手机设置不同,如果发现不能下载,请复制以下地址【http://www.mydoc123.com/d-700434.html】到电脑端继续下载(重复下载不扣费)。

已注册用户请登录:
账号:
密码:
验证码:   换一换
  忘记密码?
三方登录: 微信登录  

下载须知

1: 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。
2: 试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。
3: 文件的所有权益归上传用户所有。
4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
5. 本站仅提供交流平台,并不能对任何下载内容负责。
6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。

版权提示 | 免责声明

本文(DLA SMD-5962-94517 REV D-2009 MICROCIRCUIT LINEAR WIDEBAND VARIABLE GAIN AMPLIFIER MONOLITHIC SILICON.pdf)为本站会员(eveningprove235)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-94517 REV D-2009 MICROCIRCUIT LINEAR WIDEBAND VARIABLE GAIN AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Under Figure 1, terminal connections, for pin 2, delete “VCC” and substitute “+VCC”. Changes in accordance with N.O.R. 5962-R255-94. 94-08-03 M. A. FRYE B Add CAGE code 27014 and delete CAGE code 62839. Make changes to figure 1 and PD, JC, JA, IO

2、S, CMRR, SGNL, GCNL, GACCU, SSBW, GFPH, GFRH, GFPL, GFRL, FDTH, HD2, HD3, SR tests as specified under table I. Redrawn. - ro 99-04-12 R. MONNIN C Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. Drawing updated to reflect current requirements. - gt 04-01-23 R. MONNIN D Update boile

3、rplate paragraphs. - ro 09-08-25 C. SAFFLE REV SHET REV SHET REV STATUS REV D D D D D D D D D D D D OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY RICK C. OFFICER DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWI

4、NG IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH R. PITHADIA APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, WIDEBAND, VARIABLE GAIN AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 94-02-28 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5

5、962-94517 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E437-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94517 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 2 DSCC FORM 223

6、4 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN).

7、When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 94517 01 Q C A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4)

8、 Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA le

9、vels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 CLC522 Wideband variable gain amplifier 1.2.3 Device class designator. The

10、 device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q

11、 or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 Dual-in-line2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish.

12、The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94517 DEFENSE SUPPLY CENTER COLUMBU

13、S COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) . 7 V dc Output current (IOUT) 95 mA Common mode input voltage (VCM) . VSDifferential input voltage (VID) . 10 V Power dissipation (PD) 810 mW Lead temperature (soldering,

14、10 seconds) +300C Junction temperature (TJ) . +175C Storage temperature range . -65C to +150C Thermal resistance, junction-to-case (JC): Case C 13C/W Case 2 . 21C/W Thermal resistance, junction-to-ambient (JA): Case C 84C/W still air 44C/W 500 linear feet per minute (LFPM) Case 2 . 85C/W still air 6

15、1C/W 500 linear feet per minute (LFPM) 1.4 Recommended operating conditions. Supply voltage (VS) . 5 V dc Gain range (AV) 2 V/V to 100 V/V Ambient operating temperature (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, s

16、tandards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification

17、 for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies

18、of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references ci

19、ted herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maxi

20、mum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94517 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 4 DSCC FORM 223

21、4 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the

22、form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical d

23、imensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specifi

24、ed on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature

25、range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also

26、be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall

27、 be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M

28、shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a cert

29、ificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacture

30、rs product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for devi

31、ce class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required

32、for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available ons

33、hore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license fro

34、m IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94517 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Devi

35、ce type Limits 2/ Unit Min Max Static and dc tests. Input bias current IIB1,2 01 -21 +21 A 3 -45 +45 Input offset current IOS1,2 01 -2.0 +2.0 A 3 -4.0 +4.0 Output offset voltage VOSRS= 50 1 01 -85 +85 mV 2 -120 +120 3 -90 +90 Average input bias current drift DIB3/ 2 01 -125 +125 nA/C 3 -275 +275 Ave

36、rage output offset voltage drift DVOSTA= +125C, -55C 3/ 2 01 -300 +300 V/C 3 -400 +400 Average output offset current drift DIOSTA= +125C, -55C 3/ 2 01 -20 +20 nA/C 3 -40 +40 Supply current ISNo load 1,2 01 -61 +61 mA 3 -63 +63 Power supply sensitivity PSS +VS= +4.5 V to +5.0 V, -VS= -4.5 V to -5.0 V

37、, output referred 1,2,3 01 -28 dB Gain control input bias current IG1,2 01 -38 +38 A 3 -82 +82 Gain control input bias current temperature coefficient DIGTA= +125C, -55C 3/ 2 01 +210 nA/C 3 +600 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted witho

38、ut license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94517 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specifie

39、d Group A subgroups Device type Limits 2/ Unit Min Max Static and dc tests continued. Common mode 3/ rejection ratio CMRR VCM= 1 V, 1,2,3 01 59 dB input referenced Integral signal nonlinearity SGNL VOUT= 4 VPP1,2,3 01 0.1 % Gain control nonlinearity GCNL VOUT= 4 VPP1 01 2.0 % 2 2.5 3 3.0 Gain error

40、GACCU AV= 10 V/V 1,2 01 -0.5 +0.5 dB 3 -1.0 +0.5 Frequency response tests. Small signal bandwidth SSBW VOUT 0.5 VPP4/ 4,6 01 120 MHz 5 110 Large signal bandwidth LSBW VOUT 0.5 VPP3/ 4,6 01 100 MHz 5 90 Gain flatness peaking high GFPH 0.1 MHz to 200 MHz, 4/ 4 01 0.5 dB VOUT 0.5 VPP5,6 0.7 Gain flatne

41、ss rolloff high GFRH 0.1 MHz to 60 MHz, 4/ 4,5 01 1.0 dB VOUT 0.5 VPP6 1.3 Gain flatness peaking low GFPL 0.1 MHz to 30 MHz, 4/ 4,5,6 01 0.1 dB VOUT 0.5 VPPGain flatness rolloff low GFRL 0.1 MHz to 30 MHz, 4/ 4,5 01 0.25 dB VOUT 0.5 VPP6 0.4 See footnotes at end of table. Provided by IHSNot for Resa

42、leNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94517 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Condit

43、ions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Frequency response tests continued. Linear phase deviation LPD 0.1 MHz to 60 MHz, 3/ 4 01 1.0 Degrees VOUT 0.5 VPP5,6 1.2 Gain control bandwidth GCBW VOUT, VG 0.5 VPP3/ 4,6 01 120 MHz 5 110 Feedthro

44、ugh FDTH 30 MHz, VG -1.1 V 4/ 4,5,6 01 -37 dB Distortion and noise tests. Second harmonic distortion HD2 2 VPPat 20 MHz 4/ 4,5,6 01 -44 dBc Third harmonic distortion HD3 2 VPPat 20 MHz 4/ 4,6 01 -58 dBc 5 -54 Output noise floor OSNF 1 MHz to 200 MHz 3/ 4,6 01 -130 dBm 5 -129 (1 Hz) Output spot noise

45、 OSN 1 MHz to 200 MHz 3/ 4,6 01 62 nV / 5 68 Hz Timing domain response tests Slew rate SR Measured 1 V with 3/ 4 V step, AV= +10 9,10,11 01 1400 V/s Rise and fall time trs0.5 V step 3/ 9,11 01 2.9 ns 10 3.2 trl5.0 V step 3/ 9,10,11 5.0Settling time tS2 V step at 0.1 % of 3/ the final value 9,10,11 0

46、1 18 ns Overshoot OS 0.5 V step 3/ 9,10,11 01 15 % See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94517 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL

47、D SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Miscellaneous performance tests. Buffer tail current IT3/ 1,3 01 1.37 mA 2 1.15 VINcommon

48、 mode voltage range CMIR 3/ 1,2 01 -1.2 +1.2 V 3 -1.4 +1.4 VG input voltage VGOSHAV= 10 V/V 3/ 1,2,3 01 930 1050 mV VGOSLAV= 0 V/V 3/ -1055 -895 Output voltage range VOUTNo load 3/ 1,2 01 -3.7 +3.7 V 3 -3.5 +3.5 Output current IOUT3/ 1,2 01 -47 +47 mA 3 -25 +25 VINsignal input resistance RIN3/ 4,5 01 650 k 6 175 VINsignal input capacitance CIN3/ 4,5,6 01 2 pFVGcontrol input resistance RING3/ 4,5 01 38 k 6 15 VGcontrol input capacitance CING3/ 4,5,6 01 2.0 pFOutput impedance RODC 3/ 4,5 0

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1