DLA SMD-5962-94522 REV A-2001 MICROCIRCUIT DIGITAL BIPOLAR CMOS PROGRAMMABLE SKEW CLOCK BUFFER TTL COMPATIBLE INPUTS AND OUTPUTS MONOLITHIC SILICON《硅单片 TTL兼容输入及输出 可编程低失真时钟驱动器 氧化物半导.pdf

1、REVISIONSLTR DESCRIPTION DATE (YR -MO -DA) APPROVEDA Update boilerplate to MIL-PRF-38535 requirements. - jak 01-02-06 Thomas M. HessREVSHEETREV A A A A A ASHEET 15 16 17 18 19 20REV STATUS REV A A A A A A A A A A A A A AOF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14PMIC N/A PREPARED BY Joseph A. K

2、erby DEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYThanh V. NguyenCOLUMBUS, OHIO 43216http:/www.dscc.dla.milTHIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMonica L. Poelking MICROCIRCUIT, DIGITAL, BIPOLAR CMOS,PROGRAMMABLE SKEW CLOCK BUFFER, TTLAND AGENCIES OF THED

3、EPARTMENT OF DEFENSE DRAWING APPROVAL DATE94-09-28COMPATIBLE INPUTS AND OUTPUTS,MONOLITHIC SILICONAMSC N/A REVISION LEVELASIZEACAGE CODE67268 5962-94522SHEET 1 OF 20DSCC FORM 2233APR 97 5962 -E122-01DISTRIBUTION STATEMENT A . Approved for public release; distribution is unlimited.Provided by IHSNot

4、for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-94522DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 2DSCC FORM 2234APR 971. SCOPE1.1 Scope . This drawing documents two product assurance class levels

5、 consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in thePart or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in t

6、hePIN.1.2 PIN . The PIN is as shown in the following example:5962 - 94522 01 M X XFederal RHA Device Device Case Lead stock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator . Device class

7、es Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels andare marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash ( -) indicates a non -RHA d

8、evice.1.2.2 Device type(s) . The device type(s) identify the circuit function as follows:Device type Generic number Circuit function Skew error01 7B991 Programmable skew clock buffer, 0.7 nsTTL compatible inputs and outputs1.2.3 Device class designator . The device class designator is a single lette

9、r identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self -certification to the requirements for MIL-STD-883 compliant,non -JAN class level B microcircuits in accordanc e with MIL-PRF-38535,appendix AQ or V Certification and qualification to MIL-

10、PRF-385351.2.4 Case outline(s) . The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive designator Terminals Package styleX CQC C1-N32 32 Square leadless chip carrier1.2.5 Lead finish . The lead finish is as specified in MIL-PRF-38535 for device classes Q and

11、 V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-94522DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 3DSCC FORM 2234APR 971.3 Abso

12、lute maximum ratings . 1 / 2 / 3 /Supply voltage range (V C CN , V CCQ ) . -0.5 V dc to +7.0 V dcDC input voltage range (V IN ) -0.5 V dc to +7.0 V dcOutput current into outputs (low) (I OL ) . +64 mAStorage temperature range (T STG ) . -65 C to +150 CMaximum power dissipation (P D ) . 807 mWLead te

13、mperature (soldering, 10 seconds) . +260 CThermal resistance, junction-to-case ( JC ) . See MIL-STD-1835Junction temperature (T J ) +175 C1.4 Recommended operating conditions . 2 / 3 /Supply voltage range (V CCN , V CCQ ) . +4.5 V dc to +5.5 V dcInput voltage range (V IN ) +0.0 V d c to V CCQOutput

14、voltage range (V OUT ) +0.0 V dc to V CCNHigh level input voltage range (V IH , V IHH ):V IH . 2.0 V dc to V CCQ 4 /V IHH . V CCQ 0.85 dc to V CCQ 5 / 6 /Mid level input voltage range (V IMM ) . V CCQ /2 500 mV dc 5 /Low level input voltage range (V IL , V ILL ):V IL . -0.5 V dc to 0.8 V dc 4 /V ILL

15、 0.0 V dc to 0.85 V dc 5 / 6 /Case operating temperature range (T C ) . -55 C to +125 CInput rise or fall time (t r , t f ):(2.0 V to 0.8 V; 0.8 V to 2.0 V) 0 to 2.5 nsMaximum high level output current (I O H ) -16 mAMaximum low level output current (I OL ) +46 mA_1 / Stresses above the absolute max

16、imum rating may cause permanent damage to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2 / U nless otherwise noted, all voltages are referenced to GND.3 / Unless otherwise specified the values listed above shall apply over the full V CCN , V CCQ

17、and T C recommended operatingrange. For the absolute maximum parameters, the limits shall apply over the full specified V CCN , V CCQ and T C operatingranges and case temperature of -55 C to +125 C.4 / This voltage range applies to the REF and FB inputs only.5 / This voltage range applies to the TES

18、T, FS, and mFn inputs only. These inputs are normally wired to V CCQ or GND or leftunconnected (actual threshold voltages vary as a percentage of V CCQ ). Internal termination resistors hold unconnectedinputs at V CCQ /2. If these inputs are switched, the function and timing of the outputs may glitc

19、h and the phase-lock-loop(PLL) may require an additional t LOCK time before all table I limits are achieved.6 / Negative undershoots of 2.0 V dc are allowed with a pulse width 20 ns.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT

20、 DRAWINGSIZEA 5962-94522DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 4DSCC FORM 2234APR 972. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks . The following specification, standards, and handbooks form apart of this drawing to the extent s

21、pecified herein. Unless otherwise specified, the issues of these documents are those listedin the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited inthe solicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circuits,

22、Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL -STD -883 - Test Metho d Standard Microcircuits.MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings.MIL -HDBK -780 - Standar

23、d Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)2.2 Order of precedence . In the event of a conflict between the text of

24、 this drawing and the references cited herein, the textof this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements . The individual item requirements for device class

25、es Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements fordevice class M shal

26、l be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifiedherein.3.2 Design, construction, and physical dimensions . The design, construction, and physical dimensions shall be asspecified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-3853

27、5, appendix A and herein for device class M.3.2.1 Case outlines . The case outlines shall be in accordance with 1.2.4 herein.3.2.2 Terminal connections . The terminal connections shall be as specified on figure 1.3.2.3 Frequency range and t u calculation and programmable skew configuration . The fre

28、quency range and t u calculationand programmable skew configuration shall be as specified on figure 2.3.2.4 Block diagram . The block diagram shall be as specified on figure 3.3.2.5 Switching waveforms and test circuit . The switching waveforms and test circuit shall be as specified on figure 4.Prov

29、ided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-94522DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 5DSCC FORM 2234APR 973.3 Electrical performance characteristics and postirradiation

30、 parameter limits . Unless otherwise specified herein, theelectrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over thefull case operating temperature range.3.4 Electrical test requirements . The electrical test requirements shall be

31、 the subgroups specified in table II. The electricaltests for each subgroup are defined in table I.3.5 Marking . The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PI

32、N number is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, theRHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device cla

33、ss M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark . The certification mark for device classes Q and V shall be a “QML“ or “Q“ as requiredin MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 C

34、ertificate of compliance . For device classes Q and V, a certificate of compliance shall be required from a QML -38535listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificateof compliance shall be required from a manufacturer in

35、 order to be listed as an approved source of supply in MIL-HDBK-103(see 6.6.2 herein). The certificate of compliance submitted to DSCC -VA prior to listing as an approved source of supply forthis drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements

36、of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate of conformance . A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 orfor device class M in MIL-PRF-38535, appendix A shall be provided with e

37、ach lot of microcircuits delivered to this drawing.3.8 Notification of change for device class M . For device class M, notification to DSCC -VA of change of product (see 6.2herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535, appendix A.3.9 Verif

38、ication and review for device class M . For device class M, DSCC, DSCCs agent, and the acquiring activity retainthe option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microcircuit

39、 group assignment for device class M . Device class M devices covered by this drawing shall be inmicrocircuit group number 132 See MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-94522

40、DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 6DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics .Test andMIL-STD-883 testmethod 1 /Symbol Test conditions 2 /-55 C T C +125 C+4.5 V V CCN , V CCQ +5.5 Vunless otherwise specifiedDevicetypeGroup Asubgr

41、oups Limits 3 /UnitMin MaxHigh leveloutput voltage3006V OH1 For all inputs affectingoutput under testV IN = V IH or V ILV IH = 2.0 V, V IL = 0.8 VI OH = -16 mAV CCQ = V CCN = 4.5 VAll 1, 2, 3 2.4 VLow leveloutput voltage3007V OL For all inputs affectingoutput under testV IN = V IH or V ILV IH = 2.0

42、V, V IL = 0.8 VI OH = 46 mAV CCQ = V CCN = 4.5 VAll 1, 2, 3 0.45 VInput leakagecurrent , high(REF and FB inputsonly)3010I IH For input under testV IN = V CCQV CCN = V CCQ = 5.5 VAll 1, 2, 3 10.0 AInput leakagecurrent , low(REF and FB inputsonly)3009I IL For input under testV IN = 0.4 VV CCN = V CCQ

43、= 5.5 VAll 1, 2, 3 -500.0 AInput current, high(TEST, FS and mFninputs)3010I IHH For input under testV IN = V CCQV CCN = V CCQ = 5.5 VAll 1, 2, 3, 200.0 AInput current, mid(TEST, FS and mFninputs)I IM M For input under testV IN = V CCQ /2V CCN = V CCQ = 5.0 VAll 1, 2, 3, 50.0 AInput current, low(TEST

44、, FS and mFninputs)3009I ILL For input under testV IN = GNDV CCN = V CCQ = 5.5 VAll 1, 2, 3, -200.0 AOperating currentused by internalcircuitry3005I CCQ REF = FB = 0.0 VTEST = FS = mFn = openV CCN = V CCQ = 5.5 VI OUT = 0.0 mAAll 1, 2, 3, 90.0 mAOutput buffercurrent peroutput pair3005I CCN4 /All 4,

45、5, 6 14.0 mAPower dissipationPer output pairP D5 /Frequency = 80 MHzV CCN = V CCQ = 5.5 VI OUT = 0.0 mAInput selects openFS = 5.5 V, TEST = 0.0 VFB = connected to 3QOAll 4, 5, 6 78 mWSee footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license fr

46、om IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA 5962-94522DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 7DSCC FORM 2234APR 97TABLE I. Electrical performance characteristics Continued.Test andMIL-STD-883 testmethod 1 /Symbol Test conditions 2 /-55 C T C +125 C+4.5 V V CC

47、N , V CCQ +5.5 Vunless otherwise specifiedDevicetypeGroup Asubgroups Limits 3 /UnitMin MaxOutput short-circuitcurrent3011I OS6 /V OUT = GNDV CCN = V CCQ = 5.5 VAll 1 -250.0 mAInput capacitance3012C IN REF and FB inputs onlyfrequency = 1 MHzV CCQ = V CCN = 5.0 VSee 4.4.1bAll 4 10 pFFunctional testing

48、30147 / V IL = 0.0 VV IH = 3.0 VV CCQ = V CCN = 4.5 V and 5.5 VVerify output V OUTSee 4.4.1cAll 7, 8FS = low 15 30FS = mid 25 50Operating clockfrequencyf NOM8 / 9 /C L = 50 pFV CCQ = V CCN =4.5 V and 5.5 V,R1 = 130 , R2 = 91 See figure 2FS = highAll 9, 10, 1140 80MHzREF pulse width,hight RPWH All 9, 10, 11 5.0 nsREF pulse width,lowt RPWL All 9, 10, 11 5.0 nsProgrammable skewunitt U All 9, 10, 11 10 /Programmable skewunit errort UE11 / 17 /All 9, 10, 11 0.7 nsZero output matchedpair skew ( mQO,mQ1)t SKEWPR12 / 13 /All 9, 10, 11 0.25 nsZero output skew (alloutputs)t SKEWO12