DLA SMD-5962-94526 REV H-2009 MICROCIRCUIT LINEAR DUAL DIFFERENTIAL COMPARATOR MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Added vendor CAGE 27014. Added case outline G. Added device type 02. 94-07-21 M.A. FRYE B Updated boilerplate. Added case outline P. Added delta table for device class V. 97-08-27 R. MONNIN C Changes to test conditions for IIO, IIB, VICR, and IOH

2、in table I. - rrp 97-11-18 R. MONNIN D Make change to JAlimit for case P as specified under 1.3. - ro 98-01-21 R. MONNIN E Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. - gt 04-01-29 R. MONNIN F Add radiation hardened requirements for device type 02. Add paragraphs 1.5, 3.2.3, a

3、nd 4.4.4.1. Add two footnotes to Table I. Make changes to Table IIA. - ro 07-05-09 R. HEBER G Add device type 03 tested at Low Dose Rate. Make changes to 1.2.2, 1.5, table I, figure 1, table IIB, and 4.4.4.1. -rrp 07-10-31 R. HEBER H Add appendix A, die requirements. - drw 09-04-17 Joseph D. Rodenbe

4、ck THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV H H H H SHEET 15 16 17 18 REV STATUS REV H H H H H H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Rick C. Officer DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED

5、BY Sandra B. Rooney COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Frye AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-02-09 MICROCIRCUIT, LINEAR, DUAL DIFFERENTIAL COMPARATOR, MONOLITHIC SILICON AMSC N

6、/A REVISION LEVEL H SIZE A CAGE CODE 67268 5962-94526 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E519-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94526 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218

7、3990 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflect

8、ed in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 94526 02 V G A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Dev

9、ice class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet t

10、he MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device types. The device types identify the circuit function as follows: Device type Generic number Circuit function 01 LM193 Dual differential comparato

11、r 02 LM193A Dual differential comparator 03 LM193A Dual differential comparator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirem

12、ents for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminal

13、s Package style G MACY1-X8 8 Can P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduct

14、ion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94526 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VCC) . 36 V Differential input voltage 36

15、V Input voltage range (either input) . -0.3 V to 36 V Output voltage (VOUT) . 36 V Output current (IOUT) . 20 mA Duration of output short-circuit to ground . Unlimited Continuous total power dissipation (PD) (TA 25C): Case G 660 mW Case P . 780 mW 2/ Case 2 . 900 mW 2/ Storage temperature range -65C

16、 to +150C Case temperature for 60 seconds (case 2) 260C Case temperature for 10 seconds (cases G and P) . 260C Thermal resistance, junction-to-case (JC): Case G 44C/W Case P . 33C/W Case 2 . 20C/W Thermal resistance, junction-to-ambient (JA): Case G . 174C/W still air 99C/W 500 LFPM Case P 180C/W st

17、ill air 85C/W 500 LFPM Case 2 65C/W 1.4 Recommended operating conditions. Supply voltage (VCC) . 5 V Operating ambient temperature range (TA) . -55C to +125C 1.5 Radiation features. 3/ Maximum total dose available (dose rate = 50 300 rad(Si)/s): Device class V (device type 02) 100 Krad(Si) Maximum t

18、otal dose available (dose rate = 10 mrad(Si)/s): Device class V (device type 03) 100 Krad(Si) The manufacturer supplying RHA parts on this drawing has performed a characterization test to demonstrate that the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 Me

19、thod 1019 paragraph 3.13.1.1. Therefore this part may be considered ELDRS free. However, the manufacturer will continue to perform low dose rate lot acceptance testing on each wafer lot or wafer until characterization testing has been performed according to test method 1019 of MIL-STD-883. Since the

20、 redesigned part did not demonstrate ELDRS per Method 1019 and the previously tested device was ELDRS, device type 03 will be added to distinguish it from the 02 device. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels

21、 may degrade performance and affect reliability. 2/ For case P, with TA +68C, derating at 8.4 mW/C. For case 2, with TA +68C, derating at 11.0 mW/C. 3/ For device type 02, this part may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end po

22、int limits for the noted parameters are guaranteed only for the conditions as specified in MIL- STD-883, method 1019, condition A. For device type 03, this part has been tested and does not demonstrate low dose rate sensitivity. Radiation end point limits for the noted parameters are guaranteed for

23、the conditions specified in MIL-STD-883, method 1019, condition D.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94526 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 4 DSCC F

24、ORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitat

25、ion or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DE

26、FENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelph

27、ia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obta

28、ined. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the for

29、m, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this docum

30、ent. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accord

31、ance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing

32、and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient o

33、perating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manuf

34、acturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device

35、 classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance ma

36、rk for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94526 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SH

37、EET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ -55C TA +125C VCC= 5 V Group A subgroups Device type Limits 3/ Unit unless otherwise specified Min Max Input offset voltage 1 01 5 mV VIOVCC= 5 V to 30 V, VIC= VICmin, VOUT= 1.4 V 2, 3 9 1 02, 0

38、3 2 VCC= 5 V to 30 V, VCM= 0 V 2, 3 4 VCC= 30 V, TA= 25C, VCM= 28.5 V 1 2 VCC= 30 V, VCM= 28 V 2, 3 4 1 25 Input offset current IIOVOUT= 1.4 V 2, 3 01 100 nA 1 25 VOUT= 1.5 V, RS= 50 , VCM= 0 V 2, 3 02, 03 100 1 -100 Input bias current IIBVOUT= 1.4 V 2, 3 01 -300 nA 1 -100 VOUT= 1.5 V, VCM= 0 V 2, 3

39、 02, 03 -300 Common mode input voltage range VICR4/ 5/ 1 01 0 to VCC1.5 V 2, 3 0 to VCC2 VCC= 30 V 4/ 5/ 1 02, 03 0 to VCC1.5 2, 3 0 to VCC2 High level output current IOHVOH= 30 V, VID= 1 V, TA= +125C, -55C 2, 3 01 1 A 1 0.65 VOH= 30 V, VID= 1 V, VCC= 30 V 2, 3 02, 03 1 1 01, 02, 03 6 Low level outp

40、ut current IOLVOL= 1.5 V, VID= 1 V 2, 3 02, 03 4 mA Low level output voltage VOLIOL= 4 mA, VID= -1 mA 1 01,02, 03 400 mV 2,3 700 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-

41、94526 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ -55C TA +125C VCC= 5 V Group A subgroups Device type Limits 3/ Unit unless otherwise specified Min Max

42、 Supply current ICCVCC= 5 V, RL= , TA= +25C 1 01,02, 03 1 mA VCC= 30 V, RL= 2, 3 01 2.5 VCC= 36 V 1, 2, 3 02, 03 2.5 Power supply rejection ratio PSRR VCC= 5 V to 30 V, RS= 50 , TA= +25C 1 02, 03 60 dB Common mode rejection ratio CMRR VCC= 30 V, TA= +25C, VCM= 0 V to 28.5 V, RS= 50 , 1 02, 03 60 dB

43、Differential input voltage VDIFFVCC= 30 V, VIN= 0 V to 36 V 1, 2, 3 02, 03 500 nA Large signal differential voltage amplification AVDVCC= 15 V, TA= +25C, VOUT= 1.4 V to 11.4 V, RL 15 k to VCC4 01 50 V/mV 4 50 VCC= 15 V, RL= 15 k, VOUT= 1 V to 11 V 5, 6 02, 03 25 Response time low to high tRLHVOD= 5

44、mV, VCC= 5 V, TA= +25C 9 02, 03 5.0 s VOD= 50 mV, VCC= 5 V, TA= +25C 0.8 M,D,P,L,R 9 02, 03 1.0 Response time high to low tRHLVOD= 5 mV, VCC= 5 V, TA= +25C 9 02, 03 2.5 s VOD= 50 mV, VCC= 5 V, TA= +25C 0.8 1/ Devices supplied to this drawing are tested through all levels M, D, P, L, R of irradiation

45、 Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ For device type 02, this part may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate e

46、ffects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL- STD-883, method 1019, condition A. For device type 03, this part has been tested and does not demonstrate low dose rate sensitivity. Radiation end point limits for the noted parame

47、ters are guaranteed for the conditions specified in MIL-STD-883, test method 1019, condition D. 3/ The term “min“ (minimum) and “max“ (maximum) shall be considered to apply to magnitudes only. Negative current shall be defined as conventional current flow out of a device terminal. 4/ The voltage at

48、either input or common-mode should not be allowed to go negative by more than 0.3 V. The upper end of the common-mode voltage range is +VCC- 1.5, but either or both inputs can go to 30 V without damage. 5/ Guaranteed by VIOtest.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94526 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 7 DSCC FORM 2234 APR 97 Device types 01 01, 02, 03 02, 03 Case outlines 2 P G Termi