DLA SMD-5962-94553 REV A-2009 MICROCIRCUIT LINEAR PRECISION QUAD OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Replace reference to MIL-STD-973 with reference to MIL-PRF-38535. - ro 09-01-27 R. HEBER REV SHET REV SHET REV STATUS REV A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY RICK C. OFFICER CHECKED BY SANDRA B.

2、 ROONEY DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY MICHAEL A. FRYE STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-02-14 MICROCIRCUIT, LINEAR, PRECIS

3、ION QUAD OPERATIONAL AMPLIFIER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-94553 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E073-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-

4、94553 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case

5、 outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 94553 01 M C A Federal stock class designa

6、tor RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate

7、 RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic

8、 number Circuit function 01 HA-5134 Precision quad operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements fo

9、r MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Termina

10、ls Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networ

11、king permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94553 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Voltage between V+ and V- terminals . 40 V Differential input voltage 6

12、 V Voltage at either input terminal .V+ to V- Input current 25 mA Output current . Full short circuit protection Output current duration . Indefinite Power dissipation (PD) : Case C 1.33 W Case 2 . 1.32 W Junction temperature (TJ) . +175C Storage temperature range . -65C to +150C Lead temperature (s

13、oldering 10 seconds) . +275C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case C 75C/W 2/ Case 2 . 76C/W 2/ 1.4 Recommended operating conditions. Supply voltage 15 V Common mode input voltage (VINcm) . 1/2 x (V+ - V-) Load resistance (RL)

14、 . 2 k Operating ambient temperature range (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of th

15、ese documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electr

16、onic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Des

17、k, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Derating factor above +75C, for case C is 13.3 mW/C

18、and for case 2 is 13.2 mW/C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94553 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of preceden

19、ce. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requiremen

20、ts. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein.

21、The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-3

22、8535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance c

23、haracteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The

24、 electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the

25、 entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Markin

26、g for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535,

27、 appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from

28、 a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V

29、, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shal

30、l be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.

31、9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Mic

32、rocircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE

33、 A 5962-94553 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Input offset v

34、oltage VIOVCM= 0 V 1 01 -200 200 V 2,3 -350 350 Average offset voltage drift VIOTC VCM= 0 V, RL= 2 k 3/ 1,2,3 01 2 V/C Offset voltage match VIO|VIO(max) VIO(min)| 1 01 200 V 2,3 350 Input bias current +IIBVCM= 0 V, +RS= 10 k, 1 01 -50 50 nA -RS= 50 2,3 -75 75 -IIBVCM= 0 V, +RS= 50 , 1 -50 50 -RS= 10

35、 k 2,3 -75 75 Input offset current IIOVCM= 0 V, +RS= 10 k, 1 01 -50 50 nA -RS= 10 k 2,3 -75 75 +CMR +V = 5.0 V, -V = -25 V 1,2,3 01 10 V Common mode voltage range -CMR +V = 25 V, -V = -5.0 V -10 +CMRR +V = 5.0 V, -V = -25 V, 1 01 100 dB Common mode rejection ratio VCM= 10 V, VOUT= -10 V 2,3 94 -CMRR

36、 +V = 25 V, -V = -5.0 V, 1 100 VCM= 10 V, VOUT= 10 V 2,3 94 Output current +IOVOUT= -10 V 1 01 15 mA 2,3 8 -IOVOUT= +10 V 1 -15 2,3 -8 +ICCVOUT= 0 V, IOUT= 0 mA 1 01 6.8 mA Quiescent power supply current 2,3 8 -ICC1 -6.8 2,3 -8 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduct

37、ion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94553 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C T

38、A+125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max+PSRR VSUP= 10 V, 1 01 100 dB Power supply rejection ratio +V = +20 V, -V = -15 V, +V = +10 V, -V = -15 V 2,3 94 VSUP= 10 V, 1 100 +V = +15 V, -V = -20 V, +V = +15 V, -V = -10 V 2,3 94 Differential input resistance

39、 RINVCM= 0 V, RL = 2 k, 3/ CL= 50 pF, TA= 25C 1 01 20 M Low frequency, peak-to-peak noise Enp-p0.1 Hz to 10 Hz, 3/ RL= 2 k, CL= 50 pF, TA= +25C 1 01 0.25 Vp-p Input noise voltage density EnRS= 20 , fO= 1 kHz, 3/ RL= 2 k, CL= 50 pF, TA= +25C 1 01 10 nV / Hz Input noise current density InRS= 2 M, fO=

40、1 kHz, 3/ RL= 2 k, CL= 50 pF, TA= +25C 1 01 2 pA / Hz Power consumption PCVOUT= 0 V, 3/ 4/ IOUT= 0 mA, RL= 2 k 1,2,3 01 240 mW Large signal voltage gain +AVOLVOUT= 0 V and +10 V, 4 01 800 kV/V RL= 2.0 k 5,6 500 -AVOLVOUT= 0 V and -10 V, 4 800 RL= 2.0 k 5,6 500 Output voltage swing +VOUT1RL= 2.0 k 4,

41、5,6 01 12 V -VOUT1-12 Gain bandwidth 3/ product GBWP VO= 200 mV, fO 100 kHz, RL= 2.0 k, CL= 50 pF, TA= +25C 4 01 3 MHz See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94553 DEFE

42、NSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Unity gain 3/ bandwidt

43、h UGBW VO= 200 mV, CL= 50 pF, RL= 2.0 k, TA= +25C 4 01 3 MHz Full power 3/ 5/ bandwidth FPBW VPEAK= 10 V, RL= 2.0 k, CL= 50 pF, TA= +25C 4 01 12 kHz Minimum closed loop stable gain CLSG RL= 2 k, CL= 50 pF 3/ 4,5,6 01 +1 V/V Output resistance ROUTOpen loop 3/ 4 01 86 Channel separation CSACVIN= 1 VP-

44、P, RL= 2 k, 3/ fO= 100 Hz, CL= 50 pF, TA= +25C 4 01 120 dB VIN= 1 VP-P, RL= 2 k, 3/ fO= 10 kHz, CL= 50 pF, TA= +25C 120 CSDCVO= 10 V (20 VP-P), 3/ VIO 20 V, RL= 2 k, CL= 50 pF, TA= +25C 120 Overshoot +OS AV= +1.0, CL= 50 pF, RL= 2.0 k, TA= +25C, VOUT= 0 mV to +200 mV step 4 01 40 % -OS AV= +1.0, CL=

45、 50 pF, RL= 2.0 k, TA= +25C, VOUT= 0 mV to -200 mV step 40 Slew rate +SR AV= +1.0, CL= 50 pF, RL= 2.0 k, TA= +25C, VOUT= -3 V to +3 V step, measured at 2.5 V 4 01 0.75 V/s -SR AV= +1.0, CL= 50 pF, RL= 2.0 k, TA= +25C, VOUT= +3 V to -3 V step, measured at 2.5 V 0.75 See footnotes at end of table. Pro

46、vided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94553 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Conti

47、nued. Test Symbol Conditions 1/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Rise time tRAV= +1.0, CL= 50 pF, RL= 2.0 k, TA= +25C, VOUT= 0 mV to +200 mV step, measured at 10 percent and 90 percent points 9 01 400 ns Fall time tFAV= +1.0, CL= 50 pF, RL=

48、 2.0 k, TA= +25C, VOUT= 0 mV to -200 mV step, measured at 10 percent and 90 percent points 9 01 400 ns 1/ Unless otherwise specified, V+ = 15 V, V- = -15 V, output voltage (VOUT) = 0 V, source resistance (RS) = 50 , and load resistance (RL) = 100 k. 2/ The algebraic convention, where by the most negative value is a minimum and the most positive value is a maximum, is used in this table. Negative current shall be defined as conventional