DLA SMD-5962-94556 REV B-2004 MICROCIRCUIT LINEAR CMOS RF VIDEO MULTIPLEXERS DEMULTIPLEXERS MONOLITHIC SILICON《硅单片 氧化物半导体RF 视频信号倍增器 信号分离器 线性微型电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R245-94. 94-07-22 M. A. FRYE B Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. Drawing updated to reflect current requirements. -rrp 04-03-10 R. MONNIN REV SHET REV SHET REV STATUS REV B B B

2、B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Sandra Rooney DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Sandra Rooney COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Michael A. Fry

3、e MICROCIRCUIT, LINEAR, CMOS RF/VIDEO MULTIPLEXERS/DEMULTIPLEXERS, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 02-07-94 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-94556 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E172-04 Provided by IHSNot for ResaleNo

4、reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94556 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels cons

5、isting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the

6、PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 94556 01 M E X Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device class

7、es Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA d

8、evice. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 MAX310 CMOS RF/video 1 of 8 multiplexer/demultiplexer 02 MAX311 CMOS RF/video 2 of 8 multiplexer/demultiplexer 1.2.3 Device class designator. The device class desi

9、gnator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certificatio

10、n and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The

11、lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94556 DEFENSE SUPPLY CENTER COLUMBUS CO

12、LUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Voltage referenced to V- : V+ +36 V dc GND . +24 V dc Digital inputs V- to V+ Input current: S and common out . 50 mA All pins except S and common out 30 mA Power dissipation (PD) . 750 mW 2/ Stor

13、age temperature range . -65C to +160C Lead temperature (soldering, 10 seconds) . +300C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case outline E . 100C/W Case outline 2 110C/W 1.4 Recommended operating conditions. Operating temperature ra

14、nge -55C to +125C Supply voltage range 4.5 V dc to 15 V dc 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these

15、 documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE SPECIFICATION MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Elect

16、ronic Component Case Outlines. DEPARTMENT OF DEFENSE SPECIFICATION MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil;quicksearch/ or www.dodssp.daps.mil or from the Standa

17、rdization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes

18、 applicable laws and regulations unless a specific exemption has been obtained. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Derate linearly above TA= +75C at 10 mW/

19、C.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94556 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The indiv

20、idual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individua

21、l item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and here

22、in for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Channel selection input codes.

23、The channel selection input codes shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and sha

24、ll apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2

25、 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall stil

26、l be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in M

27、IL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this d

28、rawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supp

29、ly for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required fo

30、r device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) in

31、volving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentatio

32、n. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 82 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo repr

33、oduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94556 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +12

34、5C unless otherwise specified Group A subgroups Device type Limits Unit Min Max 1 250 Channel ON resistance RONVIN= 5 V, IOUT= 10 mA 2, 3 All 300 1 10 OFF input leakage current IS(OFF)VS= 5 V, VEN= 2.4 V, VIH= 2.4 V, VIL= 0.8 V 2, 3 All 100 nA 1 01, 02 10 01 100 OFF output leakage current ID(OFF)VS=

35、 VD= 5 V, VEN= VA = 0.8 V 2, 3 02 50 nA 1 01, 02 10 01 200 ON channel leakage current ID(ON)VS= VD= 5 V, VIL= 0.8 V, VEN= 2.4 V 2, 3 02 100 nA Input low threshold VALV+/V- = 15 V, 5 V 1, 2, 3 All 0.8 V Input high threshold VAHV+/V- = 15 V, 5 V 1, 2, 3 All 2.4 V Input current (logic) IAVA= 0 V or 5 V

36、 1, 2, 3 All 10 A OFF isolation, single 2/ channels to OUT ISOSCVS1= 3.2 V rms at 5 MHz 1 All 66 dB Positive supply current I+ EN, A0, A1, A2 = 0 V or +5 V 1, 2, 3 All 200 A Negative supply current I- EN, A0, A1, A2 = 0 V or +5 V 1, 2, 3 All 100 A 9 1.5 Access time tACCVIH= 3 V, VIL= 0 V, VEN= 2.4 V

37、, VS1= -5 V, VS8= +5 V, RL= 1 k, See figure 3 10, 11 All 2.0 s 9 1.0 Enable delay ON or OFF tEN(ON/OFF)VENH= 3 V, VENL= 0 V, VA= 0.8 V, VS= 5 V, RL= 1 k, See figure 3 10, 11 All 2.0 s Break-before-make delay tON-tOFFVS1= VSS= 5 V, VAH= 3 V, VAL= 0 V, VEN= 2.4 V, RL= 1 k, See figure 3 9, 10, 11 All 3

38、0 ns 1/ V+ = +15 V, V- = -15 V, GND = 0 V. 2/ Guaranteed but not production tested. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94556 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVE

39、L B SHEET 6 DSCC FORM 2234 APR 97 Case outline E 2 Device type 01 02 01 02 Terminal number Terminal symbol 1 S1S1AS1S1A2 S2 2A 2 2A3 S3S3ANC NC 4 S4 4AS3S3A5 S5S1B 4 4A6 S6 2BS5S1B7 S7S3B 6 2B8 S8 4BS7S3B9 V- V- NC NC 10 OUT OUTBS8S4B11 V+ V+ V- V- 12 EN EN NC NC 13 A0A0OUT OUTB14 A1 1V+ V+ 15 A2GND

40、 EN EN 16 GND OUTAA0A017 - - A1 118 - - NC NC 19 - - A2GND 20 - - GND OUTANC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94556 DEFENSE SUPPLY CENTER COLUMBU

41、S COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 Device type 01 A2A1A0EN ON channel 0 0 0 1 1 0 0 1 1 2 0 1 0 1 3 0 1 1 1 4 1 0 0 1 5 1 0 1 1 6 1 1 0 1 7 1 1 1 1 8 x x x 0 ALL OFF Device type 02 A1 A0 EN ON channel 0 0 1 1A + 1B 0 1 1 2A + 2B 1 0 1 3A + 3B 1 1 1 4A + 4B X X

42、 0 ALL OFF FIGURE 2. Channel selection input codes. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94556 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 9

43、7 FIGURE 3. Timing waveforms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94556 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 9 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1

44、Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein.

45、For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspec

46、tion. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The

47、test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent

48、specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technolog