DLA SMD-5962-94557 REV B-2009 MICROCIRCUIT MEMORY DIGITAL CMOS 1MEG X 8 BIT EEPROM MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add flat package X to drawing. Updated boilerplate. 94-11-21 M. A. Frye B Updated drawing to current requirements. Editorial changes throughout. ksr. 09-11-20 Charles F. Saffle REV SHET REV B B B B B B SHEET 15 16 17 18 19 20 REV STATUS REV B B B

2、 B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Gary L. Gross DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Jeff Bowling COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL APPROVED BY Michae

3、l A. Frye MICROCIRCUIT, MEMORY, DIGITAL, CMOS 1MEG X 8 BIT EEPROM, MONOLITHIC SILICON DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-07-28 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-94557 SHEET 1 OF 20 DSCC FORM 2233 APR 97 5962-E393-09 Provided by IHSNot f

4、or ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94557 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class

5、 levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are refle

6、cted in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 94557 01 Q Q A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator

7、. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicat

8、es a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number 1/ Circuit function Access time Endurance 01 28F008 1M x 8 CMOS EEPROM 120 ns 10,000 cycles 02 28F008 1M x 8 CMOS EEPROM 100 ns 10,000 cycles 1.2.3 Device class designat

9、or. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appen

10、dix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style Q GDIP1-T40 or CDIP2-T40 40 Dual-in-line X See figure 1 42 Flatpack 1.2.5 Lead fini

11、sh. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. 1/ Generic numbers are listed on the Standard Microcircuit Drawing Source Approval Bulletin at the end of this document and will also be listed in QML-38535 and MIL-HDBK-1

12、03 (see 6.6 herein). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94557 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings.

13、 2/ Supply voltage range (VCC) 3/ -2.0 V dc to +7.0 V dc Storage temperature range (Tstg) -65C to +150C Maximum power dissipation (PD) 1.0 W Lead temperature (soldering, 10 seconds) . +300C Junction temperature (TJ) 4/ +150C Thermal resistance, junction-to-case (JC) (case outline Q) See MIL-STD-1835

14、 Thermal resistance, junction-to-case (JC) (case outline X) 10C/W Voltage on any pin with respect to ground 3/ . -2.0 V dc to +7.0 V dc Voltage on pin A9with respect to ground 5/ . -2.0 V dc to +13.5 V dc Vppsupply voltage with respect to ground 5/ -2.0 V dc to +14.0 V dc Output short circuit curren

15、t 6/ . 100 mA Data retention . 10 years, minimum Endurance (All device types) 10,000 cycles/byte, minimum 1.4 Recommended operating conditions. 7/ Supply voltage range (VCC) . +4.5 V dc to +5.5 V dc Operating temperature range (Tcase) . -55C to +125C Low level input voltage range (VIL) -0.5 V dc to

16、+0.8 V dc High level input voltage range (VIH) +2.0 V dc to VCC+0.5 V dc High level input voltage range, CMOS (VIH) +2.0 V dc to VCC+0.5 V dc Chip clear (VP) 11.4 V dc to 12.6 V dc 1.5 Digital logic testing for device classes Q and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-

17、883, test method 5012) . 99 percent 2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 3/ Minimum dc voltage on input or VOpins is -0.5 V. During voltage transitions, inputs

18、may overshoot VSSto -2.0 V for periods of up to 20 ns. Maximum dc voltage on output and VOpins is VCC+0.5 V. During voltage transitions outputs may overshoot to VCC+2.0 V for periods up to 20 ns. 4/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screen

19、ing conditions in accordance with method 5004 of MIL-STD-883. 5/ Minimum dc input voltage on A9or VPPmay overshoot to +14.0 V for periods less than 20 ns. 6/ No more than one output shorted at a time. Duration of short circuit should not be greater than 1 second. 7/ All voltages are referenced to VS

20、S(ground). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94557 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government

21、specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MI

22、L-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microci

23、rcuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. Th

24、e following document(s) form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation. ELECTRONICS INDUSTRIES ASSOCIATION (EIA) JEDEC Standard EIA/JESD78 - IC Latch-Up Test. (Applications for copies should b

25、e addressed to the Electronics Industries Association, 2500 Wilson Boulevard, Arlington, VA 22201; http:/www.jedec.org.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents also may be available in o

26、r through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless

27、a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in th

28、e QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The desig

29、n, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connectio

30、ns. The terminal connections shall be as specified on figure 2. 3.2.3 Truth table(s). The truth table shall be as specified on figure 3. 3.2.3.1 Unprogrammed devices. The truth table for unprogrammed devices shall be as specified on figure 3 herein. When required in screening (see 4.2 herein) or qua

31、lification conformance inspection, groups A, B, or C (see 4.4), the devices shall be programmed by the manufacturer prior to test. A minimum of 50 percent of the total number of cells shall be programmed. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,

32、-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94557 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.2.3.2 Programmed devices. The requirements for supplying programmed devices are not a part of this drawing. 3.2.3.3 Command definitions. The co

33、mmand definitions table shall be as specified on figure 3. 3.2.4 Block diagram. The block diagram shall be as specified on figure 4. 3.2.5 Switching test circuits and waveforms. The switching test circuits and waveforms shall be as specified on figure 5. 3.3 Electrical performance characteristics an

34、d postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test req

35、uirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN num

36、ber is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class

37、M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Ce

38、rtificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in

39、order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements

40、of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with

41、each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and

42、review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group ass

43、ignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 42 (see MIL-PRF-38535, appendix A). 3.10.1 Unprogrammed device delivered to the user. All testing shall be verified through group A testing as defined in 3.2.3.1 and table I. It is recomm

44、ended that users perform subgroups 7 and 9 after programming to verify the specific program configuration. 3.11 Processing of EEPROMs. All testing requirements and quality assurance provisions herein shall be satisfied by the manufacturer prior to delivery. 3.11.1 Conditions of the supplied devices.

45、 Devices will be supplied in an unprogrammed or clear state. No provision will be made for supplying programmed devices. 3.11.2 Erasure of EEPROMs. When specified, devices shall be erased in accordance with procedures and characteristics specified in 4.5.1. 3.11.3 Programming of EEPROMs. When specif

46、ied, devices shall be programmed in accordance with procedures and characteristics specified in 4.5.2. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94557 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218

47、-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TC +125C 1/ 4.5 V VCC 5.5 V unless otherwise specified Group A Subgroups Device type Limits UnitsMin Max Input leakage current ILIVCC= VCCmax, VIN= VCCmax or VSS1, 2, 3 A

48、ll -1.0 +1.0 A Output leakage current ILOVCC= VCCmax, VOUT= VCCmax or VSS1, 2, 3 All -10 +10 A VCCstandby current (TTL) ICCS1VCC = VCC max, CE = PWD = VIH 1, 2, 3 All 2.0 mA VCCstandby current (CMOS) ICCS2VCC= VCCmax, CE = PWD = VCC0.2 V 1, 2, 3 All 150 A VCCactive read current (TTL) ICC1VCC= VCCmax, CE = VIL, IOUT= 0 mA f = 8.0 MHz 1, 2, 3 All 50 mA VCCactive read current (CMOS) ICC2VCC= VCCmax, CE = GND, IOUT= 0 mA f = 8.0 MHz 1, 2, 3 Al