DLA SMD-5962-94572 REV B-2009 MICROCIRCUIT LINEAR LOW NOISE WIDEBAND VARIABLE GAIN AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. -ro 02-01-11 R. MONNIN B Five year review requirement. -rrp 09-11-10 C. SAFFLE REV SHEET REV SHEET REV STATUS REV B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PMIC N/A PR

2、EPARED BY RICK C. OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH R. PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, LOW NOISE WIDEBAND VARIABLE GAI

3、N AMPLIFIER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-03-01 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-94572 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E243-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license f

4、rom IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) an

5、d space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following exam

6、ple: 5962 - 94572 01 M E A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535

7、specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) ident

8、ify the circuit function as follows: Device type Generic number Circuit function 01 AD600 Dual, low noise, 35 MHz variable gain amplifier 02 AD602 Dual, low noise, 35 MHz variable gain amplifier 03 AD603 Single, low noise, 90 MHz variable gain amplifier 1.2.3 Device class designator. The device clas

9、s designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certif

10、ication and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style E GDIP1-T16 or CDIP2-T16 16 Dual-in-line P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. The

11、lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94572 DEFENSE SUPPLY CENTER COLUMBUS CO

12、LUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Total supply voltage (VS) . 7.5 V Input voltages: C1LO, C2LO, C2HI, and C1HI pins . VSA1HI, A1LO, A2LO, and A2HI pins 2 V continuous; VSfor 10 ms GAT1 and GAT2 pins VSInternal power dissipation (P

13、D): Case E . 600 mW Case P . 400 mW Transistor count: Device types 01 and 02 . 415 BJT Device type 03 . 100 BJT Storage temperature range -65C to +150C Lead temperature range (soldering 60 seconds) . +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-a

14、mbient (JA): Case E . 120C/W Case P . 140C/W 1.4 Recommended operating conditions. Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawin

15、g to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883

16、- Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/a

17、ssist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precede

18、nce. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reli

19、ability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. Th

20、e individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The in

21、dividual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 a

22、nd herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance character

23、istics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electri

24、cal test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire

25、SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for de

26、vice class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendi

27、x A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manuf

28、acturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the re

29、quirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be pro

30、vided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verifi

31、cation and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircui

32、t group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-

33、94572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C VS= 5.0 V Group A subgroups Device type Limits 1/ Unit unless otherwise specified Min Max Minimum input

34、resistance RINA1HI to A1LO pins and A2LO to A2HI pins 1,2,3 01 95 02 95 VINto COMM pins 03 97 Maximum input resistance RINA1HI to A1LO pins and A2LO to A2HI pins 1,2,3 01 105 02 105 VINto COMM pins 03 103 Peak output 2/ 3/ VOSmin RL 500 , CL= 5 pF 1,2,3 01,02 2.5 V 03 2.3 Gain error GE1 min 0 dB to

35、+3 dB gain 1,2,3 01 -1.5 dB -10 dB to -7 dB gain 02 -1.5 GE1 max 0 dB to +3 dB gain 01 +2.5 -10 dB to 7 dB gain 02 +2.5 GE2 min +3 dB to +37 dB gain 01 -1.5 -7 dB to +27 dB gain 02 -1.5 GE2 max +3 dB to +37 dB gain 01 +1.5 -7 dB to +27 dB gain 02 +1.5 See footnotes at end of table. Provided by IHSNo

36、t for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Sym

37、bol Conditions -55C TA +125C VS= 5.0 V Group A subgroups Device type Limits 1/ Unit unless otherwise specified Min Max Gain error GE3 min +37 dB to +40 dB gain 1,2,3 01 -2.5 dB +27 dB to +30 dB gain 02 -2.5 GE3 max +37 dB to +40 dB gain 01 +1.5 +27 dB to +30 dB gain 02 +1.5 GE min VG= -500 mV to +50

38、0 mV 03 -2.0 GE max +2.0 Output offset voltage 4/ VOSO1VG= -625 mV to +625 mV 1,2,3 01 75 mV 02 55 VG= -500 mV to +500 mV 03 30 Output offset voltage gain off VOSO21,2,3 01,02 500 mV Output offset variation VOSVVG= -625 mV to +625 mV 1,2,3 01 75 mV 02 55 VG= -500 mV to +500 mV 03 30 Gain scaling fac

39、tor SF min +3 dB to +37 dB gain 1,2,3 01 29 dB/V -7 dB to +27 dB gain 02 29 -500 mV to +500 mV 03 37 Gain scaling factor SF max +3 dB to +37 dB gain 1,2,3 01 35 dB/V -7 dB to +27 dB gain 02 35 -500 mV to +500 mV 03 43 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or net

40、working permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TA +125C VS= 5

41、.0 V Group A subgroups Device type Limits 1/ Unit unless otherwise specified Min Max Logic input “LOW” (output ON) VIL2/ 1,2,3 01,02 0.8 V Logic input “HIGH” (output ON) VIH2/ 1,2,3 01,02 2.4 V Specified operating voltage VSmax 2/ 1,2,3 All 5.25 V VSmin -4.75 Quiescent current IQ1,2,3 01,02 30 mA 03

42、 20 1/ The limiting terms “min“ (minimum) and “max“ (maximum) shall be considered to apply to magnitudes only. Negative current shall be defined as conventional current flow out of a device terminal. 2/ If not tested, shall be guaranteed to the limits specified in table I herein. 3/ Use resistive lo

43、ads of 500 or greater, or with the addition of a 1 k pull-down resistor when driving lower loads. 4/ The dc gain of the main amplifier in device type 01 is 113 times; thus an input offset of only 100 V becomes an 11.3 mV output offset. In device types 02 and 03, amplifiers gain is 35.7 times; thus,

44、an input offset of 100 V becomes a 3.57 mV output offset. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234

45、 APR 97 Device types 01 and 02 03 Case outlines E P Terminal number Terminal symbol 1 C1LO GPOS 2 A1HI GNEG 3 A1LO VIN4 GAT1 COMM 5 GAT2 FDBK 6 A2LO VNEG 7 A2HI VOUT 8 C2LO VPOS 9 C2HI - 10 A2CM - 11 A2OP - 12 VNEG - 13 VPOS - 14 A1OP - 15 A1CM - 16 C1HI - FIGURE 1. Terminal connections. Provided by

46、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94572 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 9 DSCC FORM 2234 APR 97 Device types 01 and 02 Terminal symbol Description C1LO Chann

47、el 1 gain control input “LOW”. Positive voltage reduces CH1 gain. A1HI Channel 1 signal input “HIGH”. Positive voltage increases CH1 output. A1LO Channel 1 signal input “LOW”. Usually taken to CH1 input ground. GAT1 Channel 1 gating input. A logic “HIGH” shuts off channel 1 signal path. GAT2 Channel

48、 2 gating input. A logic “HIGH” shuts off channel 2 signal path. A2LO Channel 2 signal input “LOW”. Usually taken to channel 2 input ground. A2HI Channel 2 signal input “HIGH”. Positive voltage increases channel 2 output. C2LO Channel 2 gain control input “LOW”. Positive voltage reduces channel 2 gain. C2HI Channel 2 gain controlled input “HIGH”. Positive voltage increases channel 2 gain. A2CM Channel 2 common. Usually taken to channel 2 output gro