DLA SMD-5962-94579 REV A-2004 MICROCIRCUIT DIGITAL ECL LOW-POWER HEX D FLIP-FLOP MONOLITHIC SILICON《硅单片 低功率六位D型双稳态多谐振荡器 数字微型电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Radiation requirements added. Update to reflect latest changes in format and requirements. Editorial changes throughout. -les 04-01-29 Raymond Monnin REV SHET REV A SHET 15 REV STATUS REV A A A A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7

2、8 9 10 11 12 13 14 PMIC N/A PREPARED BY Larry T. Gauder DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thomas M. Hess COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY Monica L. Poelking MICROCIRCUIT, DIGITAL, ECL, L

3、OW- POWER HEX D FLIP-FLOP, AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-04-29 MONOLITHIC SILICON AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-94579 SHEET 1 OF 15 DSCC FORM 2233 APR 97 5962-E070-04 DISTRIBUTION STATEMENT A. Approved for public release; distribution is u

4、nlimitedProvided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94579 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents

5、 two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assu

6、rance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN shall be as shown in the following example: 5962 F 94579 01 M X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Dra

7、wing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RH

8、A designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type. The device type identifies the circuit function as follows: Device type Generic number Circuit function 01 100351 Low power hex D flip-flop 1.2.3 Device class designator. The device class designator is a single letter identifyin

9、g the product assurance level as listed below. Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-

10、38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X GDIP5-T24 or CDIP6-T24 24 dual-in-line Y See figure 1 24 quad-flat 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for de

11、vice classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94579 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 3 DS

12、CC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range (VEE) -7 V dc to +0.5 V dc Dc input voltage range (VIN) VEEto +0.5 V dc Dc input current range (IIN) . -30 mA to +5.0 mA Storage temperature range -65C to +150C Maximum dc output current (IOUT) . -50 mA Maximum power dissipati

13、on (PD) 2/ . 750 mW Lead temperature (soldering, 10 seconds) . +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) +175C 1.4 Recommended operating conditions. Negative supply voltage range (VEE) . -5.7 V dc minimim to 4.2 V dc maximum High level input voltage

14、 range (VIH) -1.165 V dc minimum to 0.870 V dc maximum Low level output voltage (VIL) . -1.830 V dc minimum to 1.475 V dc maximum Ambient operating temperature range (TA) -55C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads(Si)/s). 100 Krads (Si) 2. APPLICABLE

15、DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Ind

16、ex of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-

17、1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from th

18、e Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Maximum power di

19、ssipation is defined as VCCX ICC, and must withstand the added PDdue to short circuit test e.g., IOS. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94579 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-

20、5000 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

21、specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the

22、QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design,

23、 construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal connections. Th

24、e terminal connections shall be as specified on figure 2. 3.2.3 Truth table. The truth table shall be as specified on figure 3. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 4. 3.2.5 Test circuit and switching waveforms. The test circuit and switching waveforms shall be as s

25、pecified on figure 5. 3.2.6 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and post-i

26、rradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and post-irradiation parameter limits are as specified in table I and shall apply over the full case operating temperature range. 3.4 Electrical test requirements. The electrical test requireme

27、nts shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the

28、 entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Markin

29、g for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535,

30、 appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from

31、 a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V

32、, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shal

33、l be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535,

34、appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94579 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance charac

35、teristics. Test Symbol Conditions -55C TC +125C 1/ unless otherwise specified Group A subgroupsDevice type Limits Unit Min Max High level output voltage VOHVEE= -4.2 V, -5.7 V,1, 2 All -1025 -870 mV IL= -1.83 V, VIH= -0.87 V, 3 -1085 -870 Low level output voltage VOLLoading 50 to 2.0 V 1, 2 All -183

36、0 -1620 mV 3 -1830 -1555 High level threshold output VOHCVEE= -4.2 V, -5.7 V,1, 2 All -1035 mV voltage VIL= -1.475 V, VIH= -1.165 V, 3 -1085 Low level threshold output VOLCLoading 50 to 2.0 V 1, 2 All -1610 mV voltage 3 -1555 Negative power supply drain current IEEVEE= -5.7 V, -4.2 V 1, 2, 3 All -13

37、5 -50 mA Low level input current IILVEE= -4.2 V, 1, 2, 3 All 0.5 A VIN= -1.83 V High level input current IIHVEE= -5.7 V, DN 1, 2 All 240 A IN= -0.87 V 3 340 MR, CPn 1, 2 350 3 500 Functional tests VEE= -4.2 V, -5.7 V, VIH= -1165 mV, VIL= -1830 mV, See 4.4.1b, 7, 8 All Propagation delay time tPHL1VEE

38、= -4.2 V, -5.7 V, 9 All 0.5 2.2 ns CPn to Qn to Qn tPLH1See figure 5 10 0.5 2.6 11 0.4 2.4 Propagation delay time tPHL29 All 0.7 2.6 ns MR to Qn to Qn tPLH210 0.8 2.9 11 0.6 2.7 Transition time, tTLH9 All 0.2 1.6 ns Qn to Qn 2/ tTHL10 0.2 1.6 11 0.2 1.6 Setup time, tsAll 0.8 ns Dn to CPn 2/ 0.9 0.9

39、Hold time, th9 All 1.4 ns Dn to CPn 2/ 10 1.6 11 1.5 See footnote at end of table Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94579 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL

40、A SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TC +125C 1/ unless otherwise specified Group A subgroupsDevice type Limits Unit Min Max Release time, tRELVEE= -4.2 V, -5.7 V, 9 All 1.8 ns MR 2/ See figure 5 10 2.6 11 1.6 Pulse

41、width, CPn/MR 2/ tPW(H) All 2.0 ns Maximum clock frequency 2/ fMAX9, 10, 11 All 375 MHz 1/ Pre and Post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/This parameter is provided as design

42、 information only (not tested but guaranteed). 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made availabl

43、e onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 31 (see MIL-PRF-38535, appendix A). 4. QUALITY ASSURANCE PROVISIONS 4.1 Sampling and inspection. For device classes Q a

44、nd V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection pro

45、cedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in

46、 accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufac

47、turer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1015. (2) TA= +125C, m

48、inimum. b. Interim and final electrical test parameters shall be as specified in table II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94579 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 Case Y Dimension Millimeters Inches Notes Min Max Min Max A 2.16 .085 b 0.41 0.46 .015 .019 c 0.10 0.15 .004 .007 D 22.10 28.45 .870 1.120 D1 9.40 10.16 .370 .400 4 E 22.10 28.45 .870 1.120 E1 9.40 10.16 .370 .400 4