DLA SMD-5962-94581 REV A-2001 MICROCIRCUIT LINEAR LOW POWER HIGH SPEED JFET QUAD OPERATIONAL AMPLIFIER MONOLITHIC SILICON《硅单片 低功率高速JFET四重运算扬声器 线性微型电路》.pdf

1、REVISIONSLTR DESCRIPTION DATE (YR-MO-DA) APPROVEDA Drawing updated to reflect current requirements. - ro 01-02-02 R. MONNINREVSHEETREVSHEETREV STATUS REV AAAAAAAAAOF SHETS SHET 123456789PMIC N/A PREPARED BY RICK OFFICERDEFENSE SUPPLY CENTER COLUMBUSSTANDARDMICROCIRCUITDRAWINGCHECKED BYRAJESH PITHADI

2、ACOLUMBUS, OHIO 43216http:/www.dscc.dla.milTHIS DRAWING IS AVAILABLEFOR USE BY ALLDEPARTMENTSAPPROVED BYMICHAEL FRYEMICROCIRCUIT, LINEAR, LOW POWER, HIGHSPEED, JFET QUAD OPERATIONAL AMPLIFIER,AND AGENCIES OF THEDEPARTMENT OF DEFENSEDRAWING APPROVAL DATE95-02-24MONOLITHIC SILICONAMSC N/AREVISION LEVE

3、LASIZEACAGE CODE672685962-94581SHEET1 OF 9DSCC FORM 2233APR 97 5962-E090-01DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-94581DEF

4、ENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET2DSCC FORM 2234APR 971. SCOPE1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q andM) and space application (device class V). A choice of case outlines and lead

5、finishes are available and are reflected in thePart or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in thePIN.1.2 PIN. The PIN is as shown in the following example:5962 - 94581 01 M C XG7EG7E G7EG7E G7EG7EG7EG7E G7EG7E G7EG7EG7E G7E G7

6、E G7E G7E G7E Federal RHA Device Device Case Lead stock class designator type class outline finishdesignator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3)/ Drawing number1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA le

7、vels andare marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix Aspecified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.1.2.2 Device type(s). The device type(s) identify the circuit fun

8、ction as follows:Device type Generic number Circuit function01 OP482 JFET quad operational amplifier1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level asfollows:Device class Device requirements documentationM Vendor self-certificatio

9、n to the requirements for MIL-STD-883 compliant,non-JAN class level B microcircuits in accordance with MIL-PRF-38535,appendix AQ or V Certification and qualification to MIL-PRF-385351.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:Outline letter Descriptive

10、 designator Terminals Package styleC GDIP1-T14 or CDIP2-T14 14 Dual-in-line2 CQCC1-N20 20 Square leadless chip carrier1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,appendix A for device class M.Provided by IHSNot for ResaleNo reproduc

11、tion or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-94581DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET3DSCC FORM 2234APR 971.3 Absolute maximum ratings. 1/Supply voltage (G72VCC) G7218 VDifferential input voltage .36 V 2/Input

12、 voltage (VIN) G7218 V 2/Output short circuit duration IndefiniteStorage temperature range .-65G71C to +175G71CLead temperature (soldering, 60 seconds) .+300CThermal resistance, junction-to-case (G54JC) .See MIL-STD-1835Thermal resistance, junction-to-ambient (G54JA):Case C .108G71C/WCase 2 .98G71C/

13、W1.4 Recommended operating conditions.Supply voltage (G72VCC) G7215 VAmbient operating temperature range (TA) .-55G71C to +125G71C2. APPLICABLE DOCUMENTS2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form apart of this drawing to the ext

14、ent specified herein. Unless otherwise specified, the issues of these documents are those listed inthe issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in thesolicitation.SPECIFICATIONDEPARTMENT OF DEFENSEMIL-PRF-38535 - Integrated Circu

15、its, Manufacturing, General Specification for.STANDARDSDEPARTMENT OF DEFENSEMIL-STD-883 - Test Method Standard Microcircuits.MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.HANDBOOKSDEPARTMENT OF DEFENSEMIL-HDBK-103 - List of Standard Microcircuit Drawings.MIL-HDBK-780 - Standar

16、d Microcircuit Drawings.(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the StandardizationDocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)1/ Stresses above the absolute maximum rating may cause permanent damage

17、 to the device. Extended operation at themaximum levels may degrade performance and affect reliability.2/ For supply voltages less than G7218 V, the maximum voltage is equal to the supply voltage.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDA

18、RDMICROCIRCUIT DRAWINGSIZEA5962-94581DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET4DSCC FORM 2234APR 972.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the tex tof this drawing takes precedence. Nothin

19、g in this document, however, supersedes applicable laws and regulations unless aspecific exemption has been obtained.3. REQUIREMENTS3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance withMIL-PRF-38535 and as specified herein or as modified in th

20、e device manufacturers Quality Management (QM) plan. Themodification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements fordevice class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as speci

21、fiedherein.3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specifiedin MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.3.2.1 Case outline(s). The case outline(s) shall be i

22、n accordance with 1.2.4 herein.3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.3.3 Electrical performance characteristics and post irradiation parameter limits. Unless otherwise specified herein, theelectrical performance characteristics and post irradiation pa

23、rameter limits are as specified in table I and shall apply over thefull ambient operating temperature range.3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electricaltests for each subgroup are defined in table I.3.5 Marking. The p

24、art shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also bemarked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to spacelimitations, the manufacturer has the option of not marking the “5962-“ on the de

25、vice. For RHA product using this option, theRHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A.3.5.1 Certification/compliance mark. The certification mark

26、 for device classes Q and V shall be a “QML“ or “Q“ as required inMIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535lis

27、ted manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate ofcompliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see6.6.2 herein). The certificate of compliance subm

28、itted to DSCC-VA prior to listing as an approved source of supply for thisdrawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein.3.7 Certificate

29、 of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or fordevice class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing.3.8 Notification of change for device class M. For device class M, notifi

30、cation to DSCC-VA of change of product (see 6.2herein) involving devices acquired to this drawing is required for any change as defined in MIL-PRF-38535.3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retainthe option to review the ma

31、nufacturers facility and applicable required documentation. Offshore documentation shall be madeavailable onshore at the option of the reviewer.3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be inmicrocircuit group number 61 (see MIL-PRF-3

32、8535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-94581DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET5DSCC FORM 2234APR 97TABLE I. Electrical performance characteristi

33、cs.Test SymbolConditions-55G71C G64 TAG64 +125G71CVCC= G7215 VGroup AsubgroupsDevicetypeLimits 1/ Unitunless otherwise specified Min MaxInput offset voltageVIO101 4mV2,3 6Input offset currentIIOVCM= 0 V 2/101 50pA2,3 1000Input bias currentIIBVCM= 0 V 2/1 01 100 pA2,3 8000Common mode rejectionratioCM

34、RRVCM= -11 V to +15 V1,2,3 01 70 dBLarge signal voltagegainAVORL= 10 kG3A10120 V/mV2,3 12Short circuit currentlimitISCSource, TA= +25G71C1015 mASink, TA= +25G71C-8Output voltage swingVORL= 10 kG3A1,2,3 01 G7213.5 VSupply currentICCVO= 0 V, no load1,2,3 01 1 mAPower supply rejectionratioPSRRVS= G724.

35、5 V to G7218 V1,2,3 01 316 G50V/VInput offset voltage 3/driftTCVIOTA= +125G71C, -55G71C2,3 01 50 G50V/G71CGain bandwidth product 3/ GBWPAL= +1, CL= 30 pF,TA= +25G71C4012. MHzSlew rate 3/ SRVIN= 10 V step,RL= 10 kG3A, CL= 30 pF,AV= +1, TA= +25G71C4015 V/G50sSettling time 3/tSVIN= 10 V step, measureda

36、t 0.03 %, TA= +25G71C901 2.5G50s1/ The limiting terms “min” (minimum) and “max” (maximum) shall be considered to apply to magnitudes only.Negative current shall be defined as conventional current flow out of a device terminal.2/ The input bias and offset current are tested at +25G71C and +125G71C. B

37、ias and offset currents are guaranteed but nottested at 55G71C.3/ Group A only and not 100 % tested.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-94581DEFENSE SUPPLY CENTER COLUMBUSCOLUMBUS, OHIO 43216-5000REVI

38、SION LEVELASHEET6DSCC FORM 2234APR 97Device type 01Case outlines C 2TerminalnumberTerminal symbol1 OUTPUT A NC2 -INPUT A OUTPUT A3 +INPUT A -INPUT A4+VCC+INPUT A5 +INPUT B NC6 -INPUT B+VCC7 OUTPUT B NC8 OUTPUT C +INPUT B9 -INPUT C -INPUT B10 +INPUT C OUTPUT B11-VCCNC12 +INPUT D OUTPUT C13 -INPUT D -

39、INPUT C14 OUTPUT D +INPUT C15 - NC16 -VCC17 - NC18 - +INPUT D19 - -INPUT D20 - OUTPUT DNC = No connectionFIGURE 1. Terminal connections.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARDMICROCIRCUIT DRAWINGSIZEA5962-94581DEFENSE SUPPLY CENTER C

40、OLUMBUSCOLUMBUS, OHIO 43216-5000REVISION LEVELASHEET7DSCC FORM 2234APR 974. QUALITY ASSURANCE PROVISIONS4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance withMIL-PRF-38535 or as modified in the device manufacturers Quality Management (

41、QM) plan. The modification in the QM planshall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall bein accordance with MIL-PRF-38535, appendix A.4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-P

42、RF-38535, and shall be conductedon all devices prior to qualification and technology conformance inspection. For device class M, screening shall be inaccordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.4.2.1 Additional criteria fo

43、r device class M.a. Burn-in test, method 1015 of MIL-STD-883.(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revisionlevel control and shall be made available to the preparing or acquiring activity upon request. The test circuit shallspecify

44、the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified intest method 1015.(2) TA= +125G71C, minimum.b. Interim and final electrical test parameters shall be as specified in table II herein.4.2.2 Additional criteria for device classes Q and V.a. The

45、 burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in thedevice manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained underdocument revision level control of the device manufacturers Technology Re

46、view Board (TRB) in accordance withMIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shallspecify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in testmethod 1015 of MIL-STD-883

47、.b. Interim and final electrical test parameters shall be as specified in table II herein.c. Additional screening for device class V beyond the requirements of device class Q shall be as specified inMIL-PRF-38535, appendix B.4.3 Qualification inspection for device classes Q and V. Qualification insp

48、ection for device classes Q and V shall be inaccordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein forgroups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance withMIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection fordevice class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performedfor device class M shall b