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本文(DLA SMD-5962-94632 REV B-2011 MICROCIRCUIT LINEAR VOLTAGE CONVERTER DOUBLER MONOLITHIC SILICON.pdf)为本站会员(孙刚)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-94632 REV B-2011 MICROCIRCUIT LINEAR VOLTAGE CONVERTER DOUBLER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. gt 04-01-29 R. Monnin B Update boilerplate paragraphs to current MIL-PRF-38535 requirements. - ro 11-11-01 C. Saffle REV SHET REV

2、SHET REV STATUS REV B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY Marcia B. Kelleher DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF TH

3、E DEPARTMENT OF DEFENSE CHECKED BY Rajesh Pithadia APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, VOLTAGE CONVERTER / DOUBLER, MONOLITHIC SILICON DRAWING APPROVAL DATE 94-05-03 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-94632 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E027-12 Provided by

4、 IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94632 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class

5、 levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflec

6、ted in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 94632 01 M P A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. De

7、vice classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a

8、 non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 MAX660 Voltage converter / doubler 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level

9、as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The ca

10、se outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and

11、 V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94632 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Abs

12、olute maximum ratings. 1/ Supply voltage (V+ to GND, or GND to OUT) +6 V dc LV input voltage . OUT - 0.3 V dc to V+ + 0.3 V dc FC, OSC input voltage . (the least negative of OUT - 0.3 V dc or V+ - 6 V dc) to V+ + 0.3 V dc OUT and V+ continuous output current 120 mA Output short circuit duration to G

13、ND 2/ . 1 second Power dissipation, TA= +70C (PD): For case outline P, derate at 8.0 mW/C above +70C 640 mW For case outline 2, derate at 9.09 mW/C above +70C 727 mW Junction temperature (TJ) +150C Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resista

14、nce, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) . 80C/W For case outline P 125C/W For case outline 2 . 110C/W 1.4 Recommended operating conditions. Supply voltage range, inverter mode (V+ to GND) +1.5 V dc to +5.5 V dc Supply voltage range, doubler mode (GND

15、to VOUT) +2.5 V dc to +5.5 V dc Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise

16、specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835

17、- Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standa

18、rdization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes

19、 applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ OUT may be shorted to GND for 1 second

20、 without damage, but shorting OUT to V+ may damage the device and should be avoided. Also, for temperatures above +85C, OUT must not be shorted to GND or V+, even instantaneously, or device damage may result. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from I

21、HS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94632 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specif

22、ied herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN

23、class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outl

24、ines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Test circuit. The test circuit shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter l

25、imits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the sub

26、groups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to

27、space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance wi

28、th MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. Fo

29、r device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an ap

30、proved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF

31、-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot o

32、f microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DLA Land and Maritime -VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verificat

33、ion and review for device class M. For device class M, DLA Land and Maritime, DLA Land and Maritimes agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of

34、 the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 76 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MI

35、CROCIRCUIT DRAWING SIZE A 5962-94632 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Su

36、pply voltage V+ RL= 1 k, Inverter, LV = open 1,2,3 01 3.0 5.5 V RL= 1 k, Inverter, LV = GND 1.5 5.5 RL= 1 k, Doubler, LV = open 2.5 5.5 Supply current ICCNo load, FC = open 1,2,3 01 0.5 mA No load, FC = V+ 3.0 Output current VTONOUT more negative than -4 V 1,3 01 100 mA OUT more negative than -3.8 V

37、 2 100 Output resistance 2/ ROUTIL= 100 mA 1,3 01 10 2 12 Oscillator frequency fOSCFC = open 1,2,3 01 5 kHz FC = V+ 40 Power efficiency PE RL= 1 k connected between V+ and OUT 1,2,3 01 96 % RL= 1 k connected between OUT and GND 92 Voltage conversion efficiency VCENo load 1,2,3 01 99 % 1/ V+ = 5 V, C

38、1 and C2 = 150 F, 0.2 maximum ESR. Capacitors with higher equivalent series resistance (ESR) may reduce output voltage and efficiency. FC = open. 2/ Specified output resistance is a combination of internal switch resistance and capacitor ESR. Provided by IHSNot for ResaleNo reproduction or networkin

39、g permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94632 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 Device type 01 Case outline P 2 Terminal number Terminal symbol 1 FC NC 2 CAP+ FC 3 GND NC 4 CAP- CAP+ 5 OUT GND 6 L

40、V GND 7 OSC NC 8 V+ CAP- 9 - NC 10 - NC 11 - OUT 12 - NC 13 - NC 14 - NC 15 - LV 16 - NC 17 - OSC 18 - NC 19 - NC 20 - V+ FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94632

41、DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 Terminal symbol Description FC Frequency control for internal oscillator. CAP+ Charge-pump capacitor, positive terminal. GND Power supply ground input for the inverter function. Power supply positive volta

42、ge input for the doubler function. CAP Charge-pump capacitor, negative terminal OUT Output, negative voltage for the inverter function. Power supply ground input for the doubler function. LV For the inverter function this is the low voltage operation input. Tie LV to GND when the input voltage is le

43、ss than 3 V. LV may be connected to GND or left open; when overdriving OSC,LV must be connected to GND. For the doubler function LV must be tied to OUT for all input voltages. V+ Power supply positive voltage input for the inverter function. Positive voltage output for the doubler function. NC No co

44、nnect. FIGURE 1. Terminal connections continued. FIGURE 2. Test circuit. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94632 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FOR

45、M 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit,

46、 or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification

47、 and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1)

48、Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additio

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