DLA SMD-5962-94637 REV B-2004 MICROCIRCUIT LINEAR ANALOG-TO-DIGITAL CONVERTER 10-BIT 60 MHZ MONOLITHIC SILICON《硅单片 10位60兆赫模拟数字转变器 线性微型电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes to table I. Editorial changes throughout. -drw 00-09-26 Raymond Monnin B Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. Drawing updated to reflect current requirements. rrp 04-05-25 Raymond Monnin REV SHET REV SHET REV

2、 STATUS REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Dan Wonnell DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Sandra Rooney COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTM

3、ENTS APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, ANALOG-TO-DIGITAL CONVERTER, 10-BIT, 60 MHz, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-09-07 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-94637 SHEET 1 OF 14 DSCC FORM 2233 APR 97 5962-E285-04

4、 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94637 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two pr

5、oduct assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (

6、RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 94637 01 Q X C Federal stock class designator RHA designator (see 1.2.1) Devicetype (see 1.2.2) Device class designator Caseoutline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1

7、.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator.

8、 A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function Differential nonlinearity 01 AD9020S A/D converter, 10-bit, 60 MSPS 1.5 LSB 02 AD9020T A/D converter, 10-bit, 60 MSPS 1.25 LSB 1.2.3

9、Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with

10、 MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X See figure 1 68 Square gullwing lead chip carrier Y See figu

11、re 1 68 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

12、 DRAWING SIZE A 5962-94637 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Positive supply voltage (+VS). +6 V dc Negative supply voltage (-VS) -6 V dc Analog IN. -2 V dc to +2 V dc +VREF, -VREF, 3/4REF, 1/2REF,

13、 1/4REF-2 V dc to +2 V dc Digital inputs -0.5 V dc to +VS3/4REF, 1/2REF, 1/4REFcurrent . 10 mA Digital output current . 20 mA Junction temperature (TJ) +175C Thermal resistance, junction-to-case(JC): Case X . 2.6C/W Case Y . 2.6C/W Thermal resistance, junction-to-ambient(JA): Case X . 20C/W Case Y .

14、 20C/W Storage temperature range . -65C to +150C Lead soldering temperature (10 seconds). +300C 1.4 Recommended operating conditions. Positive supply voltage (+VS). +5 V dc Negative supply voltage (-VS) -5 V dc Storage temperature range . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specific

15、ation, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38

16、535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Dr

17、awings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precede

18、nce. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute m

19、aximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94637 DEFENSE S

20、UPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacture

21、rs Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 D

22、esign, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline(s). The case outline(s) shall be in accordance w

23、ith 1.2.4 herein and figure 1. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation pa

24、rameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. T

25、he part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA produc

26、t using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classe

27、s Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacture

28、r in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC

29、-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of confor

30、mance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification t

31、o DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufactu

32、rers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 57 (see MIL-PRF-38535

33、, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94637 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance char

34、acteristics. Test Symbol Conditions -55C TA+125C +VS= +5 V, -VS= -5 V, VSENSE= 1.75 V 1/ Group A subgroups Device type Limits Unit unless otherwise specified Min Max Resolution RES 2/ 1, 2, 3 All 10 Bits Differential nonlinearity DNL 1 01 1.25 LSB 02 1.0 2, 3 01 1.5 02 1.25 Integral nonlinearity INL

35、 1 01 2.75 LSB 02 2.25 2, 3 01 3.0 02 2.5 Input bias current IB3/ 1 All 1 mA 2, 3 2 Input resistance RIN1 All 2 k Reference ladder resistance RRL1 All 22 56 2, 3 14 66 Reference ladder offset voltage VORL1, 2, 3 All 90 mV Input voltage logic high VIH1, 2, 3 All 2.0 V Input voltage logic low VIL1, 2,

36、 3 All 0.8 V Input current logic high IIH1, 2, 3 All 500 A Input current logic low IIL1, 2, 3 All 800 A Output voltage logic high VOHIOH= 2 mA 1, 2, 3 All 2.4 V Output voltage logic low VOLIOH= 10 mA 1, 2, 3 All 0.4 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or net

37、working permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94637 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TA+125C +VS=

38、 +5 V, -VS= -5 V, VSENSE= 1.75 V 1/ Group A subgroups Device type Limits Unit unless otherwise specified Min Max Positive supply current +IS1 All 530 mA 2, 3 542 Negative supply current -IS1 All 170 mA 2, 3 177 Power dissipation PD 1 All 3.3 W 2, 3 3.4 Power supply rejection ratio PSRR 4/ 1, 2, 3 Al

39、l 10 mV/V Effective number of bits ENOB fIN= 2.3 MHz 5/ 4 All 7.9 Bits Signal-to-noise ratio SNR1fIN= 2.3 MHz 5/ 6/ 4 All 49.5 dB fIN= 10.3 MHz 5/ 6/ 47.5 fIN= 15.3 MHz 5/ 6/ 45.5 Signal-to-noise ratio (without harmonics) SNR2fIN= 2.3 MHz 5/ 6/ 4 All 49.5 dB fIN= 10.3 MHz 5/ 6/ 49.5 fIN= 15.3 MHz 5/

40、 6/ 48 Harmonic distortion HD fIN= 2.3 MHz 5/ 4 All 54.5 dB fIN= 10.3 MHz 5/ 48.5 fIN= 15.3 MHz 5/ 46.5 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94637 DEFENSE SUPPLY CENT

41、ER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TA+125C +VS= +5 V, -VS= -5 V, VSENSE= 1.75 V 1/ Group A subgroups Device type Limits Unit unless otherwise specified Min Max C

42、onversion rate FS9 All 60 MSPS Output delay time tOD7/ 9 All 6 13 ns Output time skew tOS7/ 9 All 5 ns Pulse width (high) tPWH9 All 6 ns Pulse width (low) tPWL9 All 6 ns 1/ 3/4REF, 1/2REF, and 1/4REFreference ladder taps are driven from dc sources at +0.875 V, 0 V, and -0.875 V, respectively. 2/ No

43、missing codes guaranteed over the full operating ambient temperature range. 3/ Measured with ANALOG IN = +VSENSE. 4/ Measured as the ratio of the worst-case change in transition voltage of a single comparator for a 5% change in +VSor VS. 5/ ENCODE = 40 MHz. 6/ RMS signal to rms noise with analog inp

44、ut signal 1 dB below full scale at specified frequency. 7/ Output delay measured at worst-case time from 50% point of the rising edge of ENCODE to 50% point of the slowest rising or falling edge of D0-D9. Output skew measured as worst-case difference in output delay among D0-D9. 4. VERIFICATION 4.1

45、Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein.

46、For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspec

47、tion. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The

48、test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT