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本文(DLA SMD-5962-94670 REV A-2009 MICROCIRCUIT LINEAR HIGH SPEED VIDEO 8-BIT D A CONVERTER MONOLITHIC SILICON.pdf)为本站会员(bowdiet140)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-94670 REV A-2009 MICROCIRCUIT LINEAR HIGH SPEED VIDEO 8-BIT D A CONVERTER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Redraw. Update drawing to current requirements. drw 09-12-30 Charles F Saffle REV SHET REV SHET REV STATUS REV A A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY Dan Wonnell DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS,

2、 OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Sandra Rooney APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, HIGH SPEED, VIDEO, 8-BIT, D/A CONVERTER, MONOLITHIC SILICON

3、DRAWING APPROVAL DATE 95-09-08 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-94670 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E126-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94670 DEFENSE SUPPLY

4、 CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead f

5、inishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 94670 01 M J A Federal stock class designator RHA designator (

6、see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Dev

7、ice class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type. The device type identifies the circuit function as follows: Device type Generic number Circuit function

8、 01 SPT5140 High speed, 385 MWPS, video 8-bit D/A converter 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883

9、 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline. The case outline is as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style J G

10、DIP1-T24 or CDIP2-T24 24 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUI

11、T DRAWING SIZE A 5962-94670 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltages: VEED(measured to VCCD) -7.0 to +0.5 V dc VEEA(measured to VCCA) . -7.0 to +0.5 V dc VCCA(measured to VCCD) -0.5 to +0.

12、5 V dc Input voltages: CONV, data and controls (measured to VCCD) VEEDto +0.5 V dc Ref+ (measured to VCCA) VEEAto +0.5 V dc Ref- (measured to VCCA) . VEEAto +0.5 V dc Junction temperature (TJ) . +175C Lead temperature (soldering, 10 seconds) . +300C Storage temperature -60C to +150C 1.4 Recommended

13、operating conditions. Ambient operating temperature range (TA) -55C to +125C Supply voltage range (VEEA, VEED) -4.9 V dc to -5.5 V dc 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to t

14、he extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test

15、 Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist

16、.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence.

17、Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliabili

18、ty. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94670 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The ind

19、ividual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individ

20、ual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and he

21、rein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical performance characteristic

22、s and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical t

23、est requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD P

24、IN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device

25、class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A.

26、3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufactur

27、er in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the require

28、ments of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided

29、 with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verificatio

30、n and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit gro

31、up assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 56 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94670

32、DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA+125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Integral linearity error ILE 1.

33、0 mA ISET 1.3 mA 1, 2, 3 01 -0.95 +0.95 LSB Differential linearity error DLE 1.0 mA ISET 1.3 mA 1, 2, 3 01 -0.50 +0.50 LSB Gain error AE1, 2, 3 01 -6.5 +6.5 %FSR Compliance voltage, + output +VOC1, 2, 3 01 -1.2 +1.5 V Compliance voltage, - output -VOC1, 2, 3 01 -1.2 +1.5 V Equivalent output resistan

34、ce RO1, 2, 3 01 20 k Maximum current, + output +IO2/ 1, 2, 3 01 45 mA Maximum current, - output -IO2/ 1, 2, 3 01 45 mA Output offset current IOSE1, 2, 3 01 0.5 LSB Input voltage, logic high VIH1, 2, 3 01 -1.0 V Input voltage, logic low VIL1, 2, 3 01 -1.5 V Convert voltage, common mode range VCMR2/ 1

35、, 2, 3 01 -0.5 -2.5 V Convert voltage, differential VDIFF2/ 1, 2, 3 01 0.4 1.2 V Input current, logic low, data and controls IIL1, 2, 3 01 120 A Input current, logic high, data and controls IIH1, 2, 3 01 120 A Input current, convert IIC1, 2, 3 01 60 A Reference voltage, measured to VCCAVREF1, 2, 3 0

36、1 -1.3 -1.0 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94670 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 TABLE

37、 I. Electrical performance characteristics - continued. Test Symbol Conditions 1/ -55C TA+125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Reference output current IOREF1, 2, 3 01 -50 A Power supply sensitivity PSS 1, 2, 3 01 -120 +120 A/V Supply current IEE1, 2, 3 0

38、1 220 mA Maximum conversion rate FS2/, 3/, TA= 25C 9 01 385 MWPS Rise time tR2/, 3/, 10% to 90% gray scale, TA= 25C 9 01 900 ps 2/, RL= 25, CL= 50 pF, 10% to 90% gray scale, TA= 25C 600 Clock to output delay, clocked mode tDSC3/, 4/, see figure 2 9 01 4.5 ns Data to output delay, transparent mode tD

39、ST3/, 4/, see figure 2 9 01 6 ns Convert pulse width tPWH, tPWL3/, 4/, see figure 2 9 01 1.3 ns Set-up time, data and controls tS3/, 4/, see figure 2 9 01 1.0 ns Hold time, data and controls tH3/, 4/, see figure 2 9 01 0.5 ns Clock feedthrough FTC3/, 4/ 9 01 -48 dB 1/ VCCD= VCCA= ground, VEEA= VEED=

40、 -5.2 V dc 0.3 V dc, CC= 0 pF, ISET= 1.105 mA unless otherwise specified. 2/ Parameter is guaranteed by design and characterization data, but not tested. 3/ RL= 37.5, CL= 5 pF. 4/ 100% production tested at TA= +25C. Parameter is guaranteed over the full temperature range. Provided by IHSNot for Resa

41、leNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94670 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outline J Terminal number Terminal symbol and function 1

42、D3 Data bit 3 2 D2 Data bit 2 3 D1 Data bit 1 4 D0 Data bit 0 (LSB) 5 VEEDDigital negative supply 6 CONV Convert clock input 7 CONV Convert clock input complement 8 FT Register feedthrough control 9 VCCDDigital positive supply 10 FH Data force high control 11 BLANK Video blank input 12 BRT Video bri

43、ght input 13 SYNC Video SYNC input 14 REF OUT Reference output 15 REF IN Reference input 16 ISETReference current 17 VCCAAnalog positive supply 18 OUT- Output current negative 19 OUT+ Output current positive 20 VEEAAnalog negative supply 21 D7 Data bit 7 (MSB) 22 D6 Data bit 6 23 D5 Data bit 5 24 D4

44、 Data bit 4 FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94670 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 FIGURE

45、 2. Timing waveforms. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94670 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 9 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling

46、 and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For devi

47、ce class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. Fo

48、r device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biase

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