DLA SMD-5962-94680 REV E-2011 MICROCIRCUIT LINEAR RADIATION HARDENED LOW NOISE PRECISION OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with NOR 5962-R140-96. 96-06-12 M. A. FRYE B Add device type 02. Add RHA requirements. Add case outlines G, H, and P. Changes were made to paragraphs 1.3, 1.4, table I, and table IIA. Update boilerplate. rrp 98-09-02 R. MONN

2、IN C Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. Add a new footnote to paragraph 1.5 and Table I. - ro 05-04-19 R. MONNIN D Add a note to case outline G as specified under figure 1. - ro 08-01-29 R. HEBER E Add device type 03 tested at low dose rate. Make changes to footnotes

3、1/ and 2/ as specified under Table I. Make change to the VOStest subgroups from 4 and 6 to 1 and 3 as specified under Table I. Make change to the TCVOStest subgroups from 5 and 6 to 2 and 3 as specified under Table I. Make change to the CMRR and AVOtest subgroups from 4, 5, 6 to 1, 2, 3 as specified

4、 under Table I. Make change to INand ENtests subgroup from 1 to 4 as specified in Table I. Make change to paragraph 4.4.4.1 and Table IIB. Delete paragraphs 4.4.4.1.1 and 4.4.4.2. - ro 11-03-30 C. SAFFLE REV SHET REV SHET REV STATUS REV E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10

5、11 12 13 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY MICHAEL FRYE MICROCIRC

6、UIT, LINEAR, RADIATION HARDENED, LOW NOISE, PRECISION, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 95-07-17 AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-94680 SHEET 1 OF 13 DSCC FORM 2233 APR 97 5962-E072-11 Provided by IHSNot for ResaleNo reproduction or networking perm

7、itted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94680 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class

8、es Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the

9、following example: 5962 R 94680 01 V G A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL

10、-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device ty

11、pe(s) identify the circuit function as follows: Device type Generic number Circuit function 01 OP-27B Low noise precision operational amplifier 02 OP-27A Low no precision operational amplifier 03 OP-27A Low noise precision operational amplifier 1.2.3 Device class designator. The device class designa

12、tor is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification a

13、nd qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can H GDFP1-F10 or CDFP2-F10 10 Flat pack P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 2 CQCC1-N20 20 Squ

14、are leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SI

15、ZE A 5962-94680 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) 22 V Internal power dissipation . 500 mW Input voltage 22 V 2/ Output short-circuit duration Indefinite Differential input voltage 0.7 V

16、 3/ Differential input current 25 mA 3/ Storage temperature range . -65C to +150C Operating temperature range -55C to +125C Lead temperature (soldering, 60 seconds) +300C Junction temperature range (TJ) -65C to +150C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junc

17、tion-to-ambient (JA): Cases G and H . 150C/W Case P . 119C/W Case 2 110C/W 1.4 Recommended operating conditions. Supply voltage (VS) . 4.5 V to 18 V Source resistor (RS) 50 Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features: Device type 02: Maximum total dose available (

18、dose rate = 50 300 rads(Si)/s) . 100 krads (Si) 4/ Device type 03: Maximum total dose available (dose rate 10 m rads(Si)/s) . 50 krads (Si) 5/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance an

19、d affect reliability. 2/ For supply voltages less than 22 V, the absolute maximum input voltage is equal to the supply voltages. 3/ The device inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds 0.7

20、 V, the input current should be limited to 25 mA. 4/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019,

21、condition A. 5/ For device type 03, radiation end point limits for the noted parameters are guaranteed for the conditions specified in MIL-STD-883, test method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT D

22、RAWING SIZE A 5962-94680 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent spec

23、ified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standa

24、rd Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at https:/assist.daps.dla.mil/

25、quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in thi

26、s document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the de

27、vice manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specifi

28、ed herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in

29、accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. U

30、nless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups s

31、pecified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN is not feasible due to space limitati

32、ons, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-385

33、35, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or

34、 networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94680 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless othe

35、rwise specified Group A subgroups Device type Limits 4/ Unit Min Max Input offset voltage VOS1 01 60 V 2, 3 200 1 02, 03 -25 25 2, 3 -60 60 M,D,P,L,R 1 02 -100 100 M,D,P,L 1 03 -100 100 Average input offset 5/ voltage TCVOSTA= +125C, -55C 2, 3 01 1.3 V/C 02, 03 -0.6 0.6 Input offset current IOS1 01

36、50 nA 2, 3 85 1 02, 03 -35 +35 2, 3 -50 +50 M,D,P,L,R 1 02 -100 100 M,D,P,L 1 03 -100 100 Average input bias current IIB1 01 -55 +55 nA 2, 3 -95 +95 1 02, 03 -40 +40 2, 3 -60 +60 M,D,P,L,R 1 02 -1000 1000 M,D,P,L 1 03 -1000 1000 Input voltage range IVR 5/ 6/ 1 01, 02, -11 +11 V 2, 3 03 -10.3 +10.3 P

37、ower supply rejection 5/ ratio PSRR VS= 4 V to 18 V 1 01 10 V/V VS= 4.5 V to 18 V 2, 3 20 VS= 4 V to 18 V 1 02, 03 10 VS= 4.5 V to 18 V 2, 3 16 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWI

38、NG SIZE A 5962-94680 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 4/ Unit Min Max

39、 Output voltage swing 5/ VOUTRL 2 k 1 01 -12 +12 V RL 600 -10 +10 RL 2 k 2, 3 -11 +11 RL 2 k 1 02, 03 -12 +12 RL 600 -10 +10 RL 2 k 2, 3 -11.5 11.5 Supply current ISNo load, TA= +25C 1 01, 02, 03 4.67 mA M,D,P,L,R 1 02 4.7 M,D,P,L 1 03 4.7 Power dissipation 5/ PDNo load, TA= +25C 1 01, 02, 03 140 mW

40、 Offset adjustment range 5/ VOSADJ RPK= 10 k, TA= +25C 1 01, 02, 03 -0.5 +0.5 mV Output short-circuit 5/ current +ISCTA= 25C 1 01, 02, 03 +70 mA -ISC-70 Input noise voltage 5/ 7/ ENfo= 1 Hz to 100 Hz, TA= +25C 4 01, 02, 03 50 nVRMSInput noise current 5/ 7/ INfo= 1 Hz to 100 Hz, TA= +25C 4 01, 02, 03

41、 40 pARMSSlew rate 5/ SR VOUT= 5 V, RL 2 k, CL= 100 pF, TA= +25C, measured at -2.5 V to +2.5 V 4 01, 02, 1.7 V/s 03 Gain bandwidth 5/ GBW TA= +25C 4 01, 02, 03 5.0 MHz Common mode 5/ rejection ratio CMRR VCM= IVR = 11 V 1 01 106 dB VCM= IVR = 10.3 V 2,3 100 VCM= IVR = 11 V 1 02, 03 114 VCM= IVR = 10

42、.3 V 2,3 108 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94680 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electr

43、ical performance characteristics - Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits 4/ Unit Min Max Large signal voltage gain AVOVOUT= 10 V, RL 2 k 1 01 1000 V/mV VOUT= 10 V, RL 600 800 VOUT= 10 V, RL 2 k 2,3 500 VOUT= 10 V, RL

44、2 k 1 02, 03 1000 M,D,P,L,R 1 02 100 M,D,P,L 1 03 100 VOUT= 10 V, RL 600 1 02, 03 800 VOUT= 10 V, RL 2 k 2,3 600 1/ Device 02 supplied to this drawing have been characterized through all levels M, D, P, L, R of irradiation. Device 03 supplied to this drawing have been characterized through all level

45、s P and L of irradiation. However, device 02 is only tested at the “R” level and device type 03 is only tested at the “L” level. Pre and Post irradiation values are identical unless otherwise specified in Table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C.

46、2/ Unless otherwise specified, VS= 15 V and source resistance (RS) = 50 . 3/ The 02 device may be low dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified

47、 in MIL-STD-883, method 1019, condition A for device type 02. Device type 03, has been tested at low dose rate. 4/ The algebraic convention, whereby the most negative value is a minimum and the most positive is a maximum, is used in this table. Negative current shall be defined as conventional curre

48、nt flow out of a device terminal. 5/ This parameter is not tested post-irradiation. 6/ Input voltage range is defined as the VCMrange used for the CMRR test. 7/ This test shall be 100% tested at preburn-in of interim electrical parameters and guaranteed to the limits specified in table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD M