ImageVerifierCode 换一换
格式:PDF , 页数:11 ,大小:105.29KB ,
资源ID:700550      下载积分:10000 积分
快捷下载
登录下载
邮箱/手机:
温馨提示:
如需开发票,请勿充值!快捷下载时,用户名和密码都是您填写的邮箱或者手机号,方便查询和重复下载(系统自动生成)。
如填写123,账号就是123,密码也是123。
特别说明:
请自助下载,系统不会自动发送文件的哦; 如果您已付费,想二次下载,请登录后访问:我的下载记录
支付方式: 支付宝扫码支付 微信扫码支付   
注意:如需开发票,请勿充值!
验证码:   换一换

加入VIP,免费下载
 

温馨提示:由于个人手机设置不同,如果发现不能下载,请复制以下地址【http://www.mydoc123.com/d-700550.html】到电脑端继续下载(重复下载不扣费)。

已注册用户请登录:
账号:
密码:
验证码:   换一换
  忘记密码?
三方登录: 微信登录  

下载须知

1: 本站所有资源如无特殊说明,都需要本地电脑安装OFFICE2007和PDF阅读器。
2: 试题试卷类文档,如果标题没有明确说明有答案则都视为没有答案,请知晓。
3: 文件的所有权益归上传用户所有。
4. 未经权益所有人同意不得将文件中的内容挪作商业或盈利用途。
5. 本站仅提供交流平台,并不能对任何下载内容负责。
6. 下载文件中如有侵权或不适当内容,请与我们联系,我们立即纠正。
7. 本站不保证下载资源的准确性、安全性和完整性, 同时也不承担用户因使用这些下载资源对自己和他人造成任何形式的伤害或损失。

版权提示 | 免责声明

本文(DLA SMD-5962-94693 REV A-2009 MICROCIRCUIT LINEAR HIGH SPEED LOW POWER 8-BIT VIDEO DIGITAL TO ANALOG CONVERTER MONOLITHIC SILICON.pdf)为本站会员(boatfragile160)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-94693 REV A-2009 MICROCIRCUIT LINEAR HIGH SPEED LOW POWER 8-BIT VIDEO DIGITAL TO ANALOG CONVERTER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Redraw. Update drawing to current requirements. drw 09-08-04 Charles F. Saffle REV SHET REV SHET REV STATUS REV A A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY Sandra Rooney DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, O

2、HIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Sandra Rooney APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, HIGH SPEED, LOW POWER, 8-BIT, VIDEO DIGITAL TO ANALOG CONVERTE

3、R, MONOLITHIC SILICON DRAWING APPROVAL DATE 94-06-16 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-94693 SHEET 1 OF 10 DSCC FORM 2233 APR 97 5962-E411-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 596

4、2-94693 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of ca

5、se outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 94693 01 Q R A Federal stock class desig

6、nator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropria

7、te RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type. The device type identifies the circuit function as follows: Device type Generic n

8、umber Circuit function 01 TLC5602M 8-bit video digital-to-analog converter 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements

9、for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outlines. The case outlines are as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Pac

10、kage style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line 2 CQCC1-N20 20 Square leadless chip carrier 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking p

11、ermitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94693 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage range, ANLG VDD, DGTL VDD. -0.5 V to 7 V Digital input voltage

12、 range, VI. -0.5 V to 7 V Analog reference range, VREFVDD 1.7 V to VDD+ 0.5 V Storage temperature range -65C to +150C Case temperature for 10 seconds: 2 package 260C Lead temperature 1.6 mm (1/16 inch) from case for 10 seconds, R package . 260C Power dissipation (TA 25C) 2/ 1375 mW Thermal resistanc

13、e, junction-to-case (JC) . See MIL-STD-1835 Junction temperature (TJ) . 150C 1.4 Recommended operating conditions. Supply voltage, VDD4.75 V Min, 5.25 V Max Analog reference voltage, VREF3.8 V Min, 4.2 V Max High-level input voltage, VIH. 2 V Min Low-level input voltage, VIL0.8 V Max Phase compensat

14、ion capacitance, CCOMP3/ 1 F Operating free-air temperature, TA. -55C TA +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified,

15、 the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interfac

16、e Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization D

17、ocument Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable

18、 laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Above 25C derate linearly at a factor of 11.0 mW/

19、C. 3/ The phase compensation capacitor should be connected between COMP and ANLG GND. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94693 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LE

20、VEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM

21、 plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, c

22、onstruction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal conn

23、ections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation paramete

24、r limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The par

25、t shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product usin

26、g this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q an

27、d V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in o

28、rder to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA pr

29、ior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance.

30、 A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC

31、-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers f

32、acility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 92 (see MIL-PRF-38535, appe

33、ndix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94693 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteri

34、stics. Test Symbol Conditions -55C TA+125C 4.75 V VDD 5.25 V Group A subgroups Device type Limits Unit unless otherwise specified Min Max High-level input current, digital inputs IIHVI= 5 V 1, 2, 3 01 1 A Low-level input current, digital inputs IILVI= 0 V 1, 2, 3 01 1 A Input reference current IREFV

35、REF= 4 V 1, 2, 3 01 10 A Full-scale analog output voltage VFSVDD= 5 V, VREF= 4.02 V 1, 2, 3 01 4.985 5.015 V Zero-scale analog output voltage VZSVDD= 5 V, VREF= 4.02 V 1 01 3.919 4.042 V 2, 3 3.919 4.062 Output resistance RO4, 5, 6 01 60 120 Supply current IDDfCLOCK= 20 MHz, VREF= VDD 0.95 V 1, 2, 3

36、 01 25 mA Linearity error, best straight line EL4 01 0.2 % 5, 6 0.4 Linearity error, differential ED1, 2, 3 01 0.2 % Pulse duration, CLK high or low tWSee figure 3 9, 10, 11 01 25 ns Setup time, data before CLK tSUSee figure 3 9, 10, 11 01 16.5 ns Hold time, data after CLK tHSee figure 3 9, 10, 11 0

37、1 12.5 ns Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94693 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 Device type 01 Case outlines R and 2 Ter

38、minal number Terminal symbol 1 NC 2 DGTL GND 3 DGTL VDD4 COMP 5 REF 6 ANLG VDD17 A OUT8 ANLG VDD29 DGTL VDD10 ANLG GND 11 CLK 12 D7 (MSB) 13 D6 14 D5 15 D4 16 D3 17 D2 18 D1 19 D0 (LSB) 20 NC NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networkin

39、g permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94693 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 STEP DIGITAL INPUTS OUTPUT VOLTAGE 1/ D7 D6 D5 D4 D3 D2 D1 D0 0 L L L L L L L L 3.980 V 1 L L L L L L L H 3

40、.984 V 127 L H H H H H H H 4.488 V 128 H L L L L L L L 4.492 V 129 H L L L L L L H 4.496 V 254 H H H H H H H L 4.996 V 255 H H H H H H H H 5.000 V H = High voltage level L = Low voltage level 1/ For VDD= 5 V, VREF= 4.020 V. FIGURE 2. Truth table. FIGURE 3. Timing waveforms. Provided by IHSNot for Re

41、saleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94693 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sa

42、mpling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures

43、shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accorda

44、nce with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition B or D. The test circuit shall be maintained by the manufacturer under doc

45、ument revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimu

46、m. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in

47、accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circu

48、it shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in accordance with MIL-PRF-38535

copyright@ 2008-2019 麦多课文库(www.mydoc123.com)网站版权所有
备案/许可证编号:苏ICP备17064731号-1