DLA SMD-5962-94695 REV D-2005 MICROCIRCUIT LINEAR 3 AMP NEGATIVE LOW DROPOUT VOLTAGE REGULATOR MONOLITHIC SILICON《3安培阴性的低电压调节器硅单片电路线型微电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. -ro 02-02-20 R. MONNIN B Make change from VOUT= VREFto VOUT= 5 V to footnote 1/ in table I. Add VOUT= VREFto conditions column for IQin table I. -rrp 04-10-18 R. MONNIN C Make correction to the tes

2、t name in table I from “Thermal resistance” to “Thermal regulation”. -rrp 04-11-18 R. MONNIN D Make change to the min limit for dimension “e” on case outline X in figure 1.-rrp 05-04-25 R. MONNIN REV SHET REV SHET REV STATUS REV B B B B B C D B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A

3、PREPARED BY RAJESH PITHADIA DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL FRYE MICROCIRCUIT, LINEAR, 3 AMP, NEGATIVE, LOW DROPOUT VOLTAG

4、E REGULATOR, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 94-11-21 AMSC N/A REVISION LEVEL D SIZE A CAGE CODE 67268 5962-94695 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E248-05 Provided by IHSNot for ResaleNo reproduction or networking permitted without license f

5、rom IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) an

6、d space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following exa

7、mple: 5962 - 94695 01 M X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 s

8、pecified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identi

9、fy the circuit function as follows: Device type Generic number Circuit function 01 1185 Negative low dropout regulator 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Ve

10、ndor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:

11、 Outline letter Descriptive designator Terminals Package style X See figure 1 4 Flange mount style 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networkin

12、g permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Input voltage . 35 V Input-Output differential 30 V VFBvoltage . 7 V VREFv

13、oltage 7 V Power dissipation (PD) 25 W Output voltage 30 V Output reverse voltage 2 V Lead temperature (soldering, 10 seconds) . +300C Operating junction temperature range (TJ): Control section -55C to +150C Power transistor section -55C to +175C Storage temperature range . -65C to +150C Thermal res

14、istance, junction-to-case (JC): TO-3 control area 1C/W Power transistor 3C/W Thermal resistance, junction-to-ambient (JA) 35C/W 1.4 Recommended operating conditions. Ambient temperature range . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The followin

15、g specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, Gen

16、eral Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit

17、Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between

18、 the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damag

19、e to the device. Extended operation at the maximum levels may degrade performance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43

20、218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The mo

21、dification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimen

22、sions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein and figure 1. 3.2.2 Terminal

23、 connections. The terminal connections shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I an

24、d shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed i

25、n 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall

26、 still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required

27、 in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of t

28、his drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of

29、 supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as requir

30、ed for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herei

31、n) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documen

32、tation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 52 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo

33、 reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C T

34、A +125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Reference voltage 2/ (at FB pin) VREFVIN- VOUT= 5 V, 3/ TA= 25C 1 01 2.34 2.4 V P 25 W, 4/ 5/ 1,2,3 2.31 2.43 VOUT= 5 V, IOUT= 1 mA to 3 A, TMIN TJ TMAXFeedback pin bias current IFB 1,2,3 01 2 A Dropout voltage 6/ -

35、 IOUT= 0.5 A, VOUT= 5 V, TA= 25C 1 01 0.37 V IOUT= 3 A, VOUT= 5 V, TA= 25C 1.00 Load regulation 7/ LOAD / VOUTIOUT= 5 mA to 3 A, VOUT= 5 V, TA= 25C, VIN- VOUT= 1.5 V to 10 V 1 01 0.3 % Line regulation 7/ LINE / VOUTVIN- VOUT= 1 V to 20 V, VOUT= 5 V, TA= 25C 1 01 0.01 %/V Minimum input 8/ voltage MIN

36、VINIOUT= 1 A, TA= 25C 1 01 4.0 V IOUT= 3 A, TA= 25C 4.5 Internal current 9/ limit ILIMIT VIN- VOUT= 10 V 2,3 01 3.1 4.2 A VIN- VOUT= 15 V 2.0 4.0 VIN- VOUT= 20 V 1.0 2.6 VIN- VOUT= 30 V 0.2 1.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted withou

37、t license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued Test Symbol Conditions 1/ -55C TA +125C Group A subgroups Device

38、type Limits Unit unless otherwise specified Min Max External current limit error - 1 A ILIM 3 A, RLIM= 15 k x A / ILIM1 01 0.06ILIM+ 0.03 A 2,3 0.1 ILIM+ 0.05 Quiescent supply 10/ current IQIOUT= 5 mA, VOUT= VREF, 1,2,3 01 3.5 mA 4 V VIN 25 V Supply current change with load IQ/ VIN- VOUT= VSAT11/ 1,

39、2,3 01 40 mA/A LOAD VIN- VOUT 2 V 25 REF pin shutoff current - 1,2,3 01 0.4 7 A Thermal regulation - VIN- VOUT= 10 V, IOUT= 5 mA to 2 A, TA= 25C 1 01 0.014 %/W Reference voltage 12/ temperature coefficient - 1,2,3 01 0.01 %/C 1/ VIN= 7.4 V, VOUT= 5 V, IOUT= 1 mA, RLIM= 4.02 k. 2/ VIN- VOUT= 1.2 V to

40、 VIN= 30 V. 3/ Reference voltage is guaranteed both at nominal conditions (no load, 25C) and at worst case conditions of load, line, power and temperature. An intermediate value can be calculated by adding the effects of these variables in the actual application. 4/ The 25 W power level is guarantee

41、d for an input-output voltage of 8.3 V to 17 V. At lower voltages the 3 A limit applies, and at higher voltages the internal power limiting may restrict regulator power below 25 W. 5/ TJMIN= -55C and TJMAX= 150C. 6/ Dropout voltage is tested by reducing input voltage until the output drops 1% below

42、its nominal value. Tests are done at 0.5 A and 3 A. The power transistor looks basically like a pure resistance in this range so that minimum differential at any intermediate current can be calculated by interpolation; VDROPOUT= 0.25 V + 0.25 x IOUT. 7/ Line and load regulation are measured on a pul

43、se basis with a pulse width of 2 ms to minimize heating. DC regulation will be affected by thermal regulation and temperature coefficient of the reference. 8/ Minimum input voltage is limited by base emitter voltage drive of the power transistor section. For output voltages below 4 V, minimum input

44、voltage specification may limit dropout voltage before transistor saturation limitation. 9/ For VIN- VOUT= 1.5 V; VIN= 5 V, VOUT= 3.5 V. VOUT= 1 V for all other tests. 10/ Supply current is measured on the ground pin, and does not include load current, RLIM, or output divider current. 11/ VSATis the

45、 maximum specified dropout voltage; 0.25 V + (0.25)(IOUT). 12/ If not tested, shall be guaranteed to the limits specified in table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94695 DEFENSE SUPPL

46、Y CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL D SHEET 7 DSCC FORM 2234 APR 97 Symbol Inches Millimeters Min Max Min Max A .320 .350 8.128 8.890 b .038 .043 .965 1.092 D .760 .775 19.30 19.69 e .440 .465 11.18 11.81 e1 .220 .235 5.588 5.969 F .060 .135 1.52 3.43 L .420 .480 10.67 12.19 P

47、 .151 .161 3.84 4.09 q 1.177 1.197 29.90 30.40 R1 .167 .177 4.241 4.495 NOTES: 1. The US government preferred system of measurement is the metric SI system. However, since this item was originally designed using inch-pound units of measurement, in the event of conflict between the metric and inch-po

48、und units, the inch-pound units shall take precedence. 2. Metric equivalents are given for general information only. FIGURE 1. Case outline. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-94695 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 8 DSCC FORM 2234 APR 97 Device type 01 Case outline X Termina