DLA SMD-5962-95527 REV A-2009 MICROCIRCUIT LINEAR 7-CHANNEL C0MMON-SOURCE POWER DMOS ARRAY MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Redraw. Update drawing to current requirements. drw 09-10-14 Charles F. Saffle REV SHET REV SHET REV STATUS REV A A A A A A A A A OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 PMIC N/A PREPARED BY Marcia B. Kelleher DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, O

2、HIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY Rajesh Pithadia APPROVED BY Michael A. Frye MICROCIRCUIT, LINEAR, 7-CHANNEL C0MMON-SOURCE POWER DMOS ARRAY, MONOLITHIC SILICON

3、 DRAWING APPROVAL DATE 94-11-28 AMSC N/A REVISION LEVEL A SIZE A CAGE CODE 67268 5962-95527 SHEET 1 OF 9 DSCC FORM 2233 APR 97 5962-E461-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95527 DEFENSE SUPPLY

4、 CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead f

5、inishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 95527 01 Q J A Federal stock class designator RHA designator (

6、see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Dev

7、ice class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type. The device type identifies the circuit function as follows: Device type Generic number Circuit function

8、 01 TPIC2701M 7-channel common-source power DMOS array 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 comp

9、liant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline. The case outline are as designated in MIL-STD-1835 as follows: Outline letter Descriptive designator Terminals Package style J GDIP1-T24

10、 or CDIP2-T24 24 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWIN

11、G SIZE A 5962-95527 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Drain-source voltage (VDS) . 60 V dc Gate-source voltage (VGS) . 20 V dc Clamp-drain voltage (VCD) 60 V dc Continuous source-drain diode curren

12、t 0.5 A Pulsed drain current, each output (ID) 2/ 3 A Pulsed clamp current (ICL) 2/ 3 A Continuous drain current, each output, all outputs ON . 0.5 A Single-pulse avalanche energy, (EAS) 22 mJ Continuous total dissipation at (or below) TA= +25C 1.38 W 3/ Junction temperature (TJ) . +150C Storage tem

13、perature range -65C to +150C Lead temperature 1.6 mm (1/16 inch) from case, for 60 seconds +300C Thermal resistance, junction-to-case (JC) . See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) 90C/W 1.4 Recommended operating conditions. Ambient operating temperature range (TA) -55C to +125

14、C Gate-Source voltage, (VGS) +15 V dc 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those

15、cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outl

16、ines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, B

17、uilding 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific e

18、xemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Pulse duration = 10 ms, duty cycle = 6 percent. 3/ For operation above TA= +25C, derate li

19、nearly at the rate of 11 mW/C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95527 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1

20、 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as de

21、scribed herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specif

22、ied in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.3 Electrical

23、 performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test req

24、uirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where

25、marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF

26、-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in

27、MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be

28、 required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device c

29、lasses Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, a

30、ppendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects th

31、is drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall be made available onshore at the option of the revi

32、ewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 53 (see MIL-PRF-38535, appendix A).Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT

33、 DRAWING SIZE A 5962-95527 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA+125C Group A subgroups Device type Limits Unit unless otherwise specified Min Max Drai

34、n-source breakdown voltage V(BR)DSID= 1 A, VGS= 0 1 01 60 V ID= 1 mA, VGS= 0 2, 3 60 Gate-source threshold voltage VTGSID= 1 mA, VDS= VGS1, 2, 3 01 1.2 2.4 V Drain-source on stage voltage VDS(ON)ID= 0.5 mA, VGS= 15 V 1 01 0.45 V 2, 3 0.65 Zero-gate-voltage drain current IDSSVDS= 48 V, VGS= 0 1 01 1

35、A 2, 3 10 Forward gate current, drain short circuited to source IGSSFVGS= 20 V, VDS= 0 1 01 100 nA 2, 3 10 A Reverse gate current, drain short circuited to source IGSSRVGS= -20 V, VDS= 0 1 01 100 nA 2, 3 10 A Forward drain-source on-state resistance rDS(ON)VGS= 15 V, ID= 0.5 A 1 01 0.9 2, 3 1.3 Forw

36、ard on voltage, source-drain diode VSDIS= 0.5 A, VGS= 0 1, 2, 3 01 1.4 V Forward on voltage, clamp diode VFIF= 0.5 A 1, 2, 3 01 1.5 V Breakdown voltage, clamp diode VBRIR= 1A 1 01 60 V IR= 1mA 2, 3 60 Reverse leakage current, clamp diode IRVR= 48 V 1 01 1 A 2, 3 10 1/ Pulse-testing techniques are us

37、ed to maintain the virtual junction temperature as close to the case temperature as possible. Thermal effects must be taken into account separately. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95527 DEFEN

38、SE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 6 DSCC FORM 2234 APR 97 Device type 01 Case outlines J Terminal number Terminal symbol 1 GATE 1 2 GATE 2 3 GATE 3 4 NC 5 NC 6 GATE 4 7 GATE 5 8 NC 9 GATE 6 10 GATE 7 11 SOURCE 12 SOURCE 13 SOURCE 14 CLAMP 15 DRAIN 7 16 DRAIN

39、6 17 NC 18 DRAIN 5 19 DRAIN 4 20 NC 21 NC 22 DRAIN 3 23 DRAIN 2 24 DRAIN 1 NC = No connection FIGURE 1. Terminal connections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95527 DEFENSE SUPPLY CENTER COLUMB

40、US COLUMBUS, OHIO 43218-3990 REVISION LEVEL A SHEET 7 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. T

41、he modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535

42、, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for dev

43、ice class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition B or D. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inpu

44、ts, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a.

45、 The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the device manufacturers QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document revision level control of the device manufacturers Technol

46、ogy Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD

47、-883. b. Interim and final electrical test parameters shall be as specified in table II herein. c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in MIL-PRF-38535, appendix B. 4.3 Qualification inspection for device classes Q and V. Qualificat

48、ion inspection for device classes Q and V shall be in accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4). 4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspecti