DLA SMD-5962-95536 REV H-2009 MICROCIRCUIT LINEAR HIGH SPEED HIGH OUTPUT CURRENT VOLTAGE FEEDBACK AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add a device class V device. Make changes to table II and add table IIB. 96-11-19 R. MONNIN B Add case outlines H and X. Make changes to 1.2.4, 1.3, and FIGURE 1. 97-06-13 R. MONNIN C Change case outline X dimensions L, R, and R1 for FIGURE 1. -

2、lgt 97-11-25 R. MONNIN D Change values for thermal resistance under the absolute maximum ratings. Change footnote 1 for table I. Change test conditions for Slew rate in table I. lgt 98-09-22 R. MONNIN E Add radiation hardened requirements. - ro 00-03-15 R. MONNIN F Change the maximum total dose avai

3、lable value in 1.5. Remove radiation test circuit. rrp 00-08-18 R. MONNIN G Delete figure 1 and update drawing to reflect current requirements. - ro 03-02-26 R. MONNIN H Add device type 02 tested at low dose rate. Make changes to footnotes 1/ and 2/ as specified under Table I. Make a change to parag

4、raph 4.4.4.1. Delete the Accelerated aging test. - ro 09-03-10 R. HEBER THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED. REV SHET REV SHET REV STATUS REV H H H H H H H H H H H H OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY RICK OFFICER CHECKED BY RAJESH PITHADIA DEFENSE

5、 SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil APPROVED BY MICHAEL FRYE STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 96-04-29 MICROCIRCUIT, LINEAR, HIGH SPEED, HIGH OUTPUT

6、CURRENT, VOLTAGE FEEDBACK, AMPLIFIER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL H SIZE A CAGE CODE 67268 5962-95536 SHEET 1 OF 12 DSCC FORM 2233 APR 97 5962-E152-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A

7、 5962-95536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice o

8、f case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 95536 02 V P A Federal stock class d

9、esignator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appro

10、priate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type G

11、eneric number Circuit function 01 LM7171 High speed, high output current, voltage feedback amplifier 02 LM7171 High speed, high output current, voltage feedback amplifier and not sensitive at low dose rate 1.2.3 Device class designator. The device class designator is a single letter identifying the

12、product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4

13、 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style H GDFP1-F10 or CDFP2-F10 10 Flat pack P GDIP1-T8 or CDIP2-T8 8 Dual-in-line X GDFP1-G10 10 Flat pack with gullwing leads 1.2.5 Lead finish. The lead f

14、inish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS

15、, OHIO 43218-3990 REVISION LEVEL H SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (+VSto VS) 36 V Differential input voltage . 10 V 2/ Output short circuit to ground . Continuous 3/ Storage temperature range -65C to +150C Power dissipation (PD) . 730 mW Lead temperatur

16、e (soldering, 10 seconds) . +260C Junction temperature (TJ) +150C Thermal resistance, junction-to-case (JC): Cases H and X . 5C/W Case P 3C/W Thermal resistance, junction-to-ambient (JA): Cases H and X . 182C/W still air 105C/W at 500 linear feet per minute Case P 106C/W still air 53C/W at 500 linea

17、r feet per minute 1.4 Recommended operating conditions. Supply voltage . 5.5 V to 36 V Ambient operating temperature range (TA) -55C to +125C 1.5 Radiation features: 4/ 5/ Device type 01: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 300 Krads (Si) Device type 02: Maximum total dose

18、available (dose rate = 10 mrads (Si)/s) 300 Krads (Si) The manufacturer supplying RHA device 02 parts on this drawing has completed Lot Acceptance testing at Low Dose Rate (10 mrad/s) on these RHA marked parts. The Low Dose Rate (LDR) testing that was performed demonstrates that these parts from the

19、 lot tested do not have an Enhanced Low Dose rate Sensitivity as defined by Method 1019. Lot Acceptance Testing at LDR will continue to be performed on each wafer. Since the redesigned part did not demonstrate ELDRS per Method 1019 and the previously tested device type 01 was not tested for ELDRS, d

20、evice type 02 will be added to distinguish it from the 01 device. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Input differential voltage is measured at VS= 15 V.

21、3/ Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed TJof +150C. 4/ For device type 01, these parts may be dose rate sensitive in a space environment and may demonstrate enhanced lo

22、w dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A. 5/ For device type 02, these parts have been tested and do not demonstrate low dose rate sensitivity. Radiation end point limits for

23、the noted parameters are guaranteed for the conditions specified in MIL-STD-883, test method 1019, condition D. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, O

24、HIO 43218-3990 REVISION LEVEL H SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of th

25、ese documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electr

26、onic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Des

27、k, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulat

28、ions unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modifi

29、cation in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimension

30、s. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. T

31、he terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical p

32、erformance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requi

33、rements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where m

34、arking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-

35、38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in M

36、IL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical perf

37、ormance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max 5 V section Input offset voltage VOS1 01, 02 1.5 mV 2,3 7 Input bias current IIB1 01, 02 10 A 2,3 12 Input offset current IOS1 01, 02 4 A 2,3 6 Common mo

38、de rejection ratio CMRR VCM= 2.5 V 1 01, 02 80 dB 2,3 70 Large signal voltage gain AVRL= 1 k 4/ 1 01, 02 75 dB 2,3 70 RL= 100 4/ 1 72 2,3 67 Output voltage swing VOUTRL= 1 k 1 01, 02 3.2 -3.2 V 2,3 3.0 -3.0 RL= 100 1 2.9 -2.9 2,3 2.8 -2.75 Output current IOUTSourcing, RL= 100 5/ 1 01, 02 29 mA 2,3 2

39、8 Sinking, RL= 100 5/ 1 29 2,3 27.5 Supply current ICC1 01, 02 8 mA 2,3 9 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 432

40、18-3990 REVISION LEVEL H SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max 15 V section Input offset voltage VOS1 01, 02 1 mV 2,3 7 Input b

41、ias current IIB1 01, 02 10 A 2,3 12 Input offset current IOS1 01, 02 4 A 2,3 6 Common mode rejection ratio CMRR VCM= 10 V 1 01, 02 85 dB 2,3 70 Power supply rejection ratio PSRR VS= 15 V to 5 V 1 01, 02 85 dB 2,3 80 Large signal voltage gain AVRL= 1 k 4/ 1 01, 02 80 dB 2,3 75 RL= 100 4/ 1 75 2,3 70

42、Output voltage swing VOUTRL= 1 k 1 01, 02 13 -13 V 2,3 12.7 -12.7 RL= 100 1 10.5 -9.5 2,3 9.5 -9 Output current, open loop IOUTSourcing, RL= 100 5/ 1 01, 02 105 mA 2,3 95 Sinking, RL= 100 5/ 1 95 2,3 90 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitt

43、ed without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95536 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL H SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA+125C unless other

44、wise specified Group A subgroups Device type Limits Unit Min Max 15 V section - continued Supply current ICC1 01, 02 8.5 mA 2,3 9.5 Slew rate SR AV= 2, VIN= 2.5 V, 6/ rise and fall time = 3 ns, 4 01, 02 2000 V/s TA= +25C Unity gain bandwidth UGBW 4 01, 02 170 MHz 1/ RHA devices supplied to this draw

45、ing have been characterized through all levels M, D, P, L, R, F of irradiation. Pre and Post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 2/ The 01 device may be dose rate sensitive in a

46、space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A for device type 01. Device type 02, has been tested at low dose rate and does not dem

47、onstrate low dose rate sensitivity (see 1.5 herein). 3/ Unless otherwise specified VCM= 0 V and RL 1 M for subgroups 1, 2, 3 only. VCM= 0 V for subgroup 4. For the 5 V section tests, +VS= +5 V and VS= -5 V. For the 15 V section tests, +VS= +15 V and VS= -15 V. 4/ Large signal voltage gain is the tot

48、al output swing divided by the input signal required to produce that swing. For the 5 V section tests, VOUT= 1 V. For the 15 V section tests, VOUT= 5 V. 5/ The open loop output current is guaranteed by the measurement of the open loop output voltage swing, using 100 output load. 6/ The slew rate is measured between 4 V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95536 DEFENSE