DLA SMD-5962-95597 REV E-2010 MICROCIRCUIT LINEAR VOLTAGE FEEDBACK CLAMP AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add RIN, CIN, ZOUT, ZDOUT, BW, CNL, TOV, DIS, PSRR, HFRR, and VNtests as specified under Table I. Changes in accordance with N.O.R. 5962-R183-96. 96-08-08 R. MONNIN B Make changes to CNL and VNtests as specified under Table I. Changes in accordan

2、ce with N.O.R. 5962-R138-97. 96-11-21 R. MONNIN C Drawing updated to reflect current requirements. Redrawn - ro 00-04-07 R. MONNIN D Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. - gt 03-06-20 R. MONNIN E Update boilerplate paragraphs to current MIL-PRF-38535 requirements. - ro

3、10-02-03 C. SAFFLE REV SHET REV SHET REV STATUS REV E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPART

4、MENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY MICHAEL FRYE MICROCIRCUIT, LINEAR, VOLTAGE FEEDBACK CLAMP AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 95-08-04 AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-95597 SHEET 1 OF 10 DSCC FORM 2233 APR 9

5、7 5962-E172-10 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95597 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing do

6、cuments two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardne

7、ss Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 95597 01 M P A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Leadfinish (see 1.2.5) / (see 1.2.3) / Draw

8、ing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA

9、 designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 AD8036 Low distortion, wide bandwidth, voltage feedback clamp amplifier 1.2.3 Device class designator. The device clas

10、s designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certif

11、ication and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style P GDIP1-T8 or CDIP2-T8 8 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38

12、535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95597 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E

13、SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) . 6 V Input common mode range . VSInternal power dissipation (PD) . 1.3 W 2/ Storage temperature range . -65C to +150C Lead temperature range (soldering 60 seconds) +300C Thermal resistance, junction-to-case (JC) . Se

14、e MIL-STD-1835 Thermal resistance, junction-to-ambient (JA) 110C/W 1.4 Recommended operating conditions. Supply voltage (VS) . 5 V Operating ambient temperature range (TA) -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, stand

15、ards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for

16、. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of t

17、hese documents are available online at https:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited

18、 herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum

19、 levels may degrade performance and affect reliability. 2/ Derate at 9 mW/C for TA 32C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95597 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION

20、LEVEL E SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the

21、QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design,

22、 construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal conn

23、ections shall be as specified on figure 1. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full amb

24、ient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the

25、manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device c

26、lasses Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark

27、 for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For de

28、vice class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm

29、that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-P

30、RF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this

31、drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation shall b

32、e made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking permitted

33、 without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95597 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA+125C unless otherwise specified Gro

34、up A subgroups Device type Limits 2/ Unit Min Max Offset voltage VOS1 01 -7 7 mV 2,3 -8 -8 Positive supply current +IS1 01 21.5 mA 2,3 25 Negative supply current -ISTA= +25C 1 01 -21.5 mA Common mode rejection ratio CMRR VCM= 2 V, TA= +25C 1 01 -0.7 0.7 mV/V Power supply rejection ratio PSRR TA= +25

35、C 1 01 -3.16 3.16 mV/V Input bias current IIBTA= +25C 1 01 -10 10 A Input bias offset current IIBSTA= +25C 1 01 -3 3 A Clamp bias current IBCH/ IBCL1,2,3 01 -100 100 A Clamp high/clamp low VCHE/ 1 01 -10 10 mV voltage (VCH/VCL) error VCLE2,3 -12 12Clamp bias current ICLMeasured at 1 V and +1 V, TA=

36、+25C 1 01 -60 60 A Open loop gain AOLMeasured at 0 V and -2.5 V, measured at 0 V and +2.5 V 1,2,3 01 .251 1000 kV/V Positive output swing +VOUTRL= 150 , TA= +25C 1 01 3.2 5.0 V RL= 50 , TA= +25C 2.5 5.0 VS= 3 V, RL= 150 , TA= +25C 1.0 3.0 Negative output swing -VOUTRL= 150 , TA= +25C 1 01 -5.0 -3.2

37、V RL= 50 , TA= +25C -5.0 -2.5 VS= 3 V, RL= 150 , TA= +25C -3.0 -1.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95597 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-399

38、0 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ -55C TA+125C unless otherwise specified Group A subgroups Device type Limits 2/ Unit Min Max Short circuit source current +ISCTA= +25C 1 01 60 220 mA Short circuit si

39、nk current -ISCTA= +25C 1 01 -220 -60 mA Input resistance RINVS= 5 V 3/ 1 01 400 1000 k Input capacitance CINVS= 5 V 3/ 1,2,3 01 0.2 2.5 pF Output impedance ZOUTVS= 5 V, 3/ dc to 200 kHz, gain = +1 1 01 0.05 0.33 Dynamic output impedance ZDOUTVS= 5 V, 3/ 200 kHz to 10 MHz, gain = +1 1 01 0.3 1.0 Ope

40、n loop bandwidth BW VS= 5 V 3/ 1 01 150 330 MHz Clamp non-linearity CNL VS= 5 V 3/ 1 01 0.15 V Overvoltage recovery time TOV VS= 5 V, 2X overdrive 3/ 1 01 3.0 ns Harmonic distortion, (any harmonic) DIS VS= 5 V 3/ 1 01 -60 dB Power supply rejection ratio PSRR VS= 5 V, 3/ dc to 200 kHz, rolloff 200 kH

41、z to 40 MHz 1 01 50 dB High frequency rejection ratio HFRR VS= 5 V, 3/ above 40 MHz 1 01 5 dB Average input noise voltage VNVS= 5 V 3/ 1,2,3 01 200 VRMS 1/ Unless otherwise specified, VS= 5 V. 2/ The algebraic convention, whereby the most negative value is a minimum and the most positive is a maximu

42、m, is used in this table. Negative current shall be defined as conventional current flow out of a device terminal. 3/ If not tested, shall be guaranteed to the limits specified in table I herein. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDA

43、RD MICROCIRCUIT DRAWING SIZE A 5962-95597 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 Device type 01 Case outline P Terminal number Terminal symbol 1 NC 2 -INPUT 3 +INPUT 4 -VS5 VL6 OUTPUT 7 +VS8 VHNC = No connection FIGURE 1. Terminal conn

44、ections. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95597 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 8 DSCC FORM 2234 APR 97 4. VERIFICATION 4.1 Sampling and inspecti

45、on. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. For device class M, s

46、ampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification and technology conformance inspection. For device clas

47、s M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Test condition B. The test circuit shall be maintained

48、by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified in table II herein. 4.2.2 Additional criteria for device classes Q and V. a. The burn-in test duratio