DLA SMD-5962-95598 REV B-2009 MICROCIRCUIT LINEAR LOGARITHMIC AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Drawing updated to reflect current requirements. - ro 02-03-18 R. MONNIN B Five year review requirement. -rrp 09-10-21 C. SAFFLE REV SHEET REV SHEET REV STATUS REV B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 PMIC N/A PREPARED BY

2、 RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL FRYE MICROCIRCUIT, LINEAR, LOGARITHMIC AMPLIFIER, MONOLITHIC SILICON AND AGE

3、NCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-05-12 AMSC N/A REVISION LEVEL B SIZE A CAGE CODE 67268 5962-95598 SHEET 1 OF 11 DSCC FORM 2233 APR 97 5962-E253-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWI

4、NG SIZE A 5962-95598 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A

5、 choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 95598 01 M R A Federal stoc

6、k class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked wit

7、h the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: De

8、vice type Generic number Circuit function 01 AD641 Logarithmic amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements fo

9、r MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Termina

10、ls Package style R GDIP1-T20 or CDIP2-T20 20 Dual-in-line 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

11、STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95598 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Supply voltage (VS) . 7.5 V Input voltage (SIG -IN pin or SIG +IN pin to GND) -3 V to +300 mV Attenuator input volt

12、age (ATN IN pin to ATN COM pins) . 4 V Power dissipation (PD) 900 mW Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) 300C Thermal resistance, junction-to-case (JC) . 25C/W Thermal resistance, junction-to-ambient (JA) . 120C/W 1.4 Recommended operating conditions. Pos

13、itive operating voltage range (+VS) . 4.5 V to 5.5 V Negative operating voltage range (-VS) . -4.5 V to -5.5 V Ambient operating temperature range (TA) . -55C to +125C 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbook

14、s form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DE

15、FENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are

16、 available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text o

17、f this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade p

18、erformance and affect reliability. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95598 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 3. REQUIREMENTS

19、 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function a

20、s described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as sp

21、ecified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Blo

22、ck diagram. The block diagram shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall a

23、pply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 her

24、ein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be

25、 marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-P

26、RF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawi

27、ng (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply f

28、or this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for de

29、vice classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involv

30、ing devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. O

31、ffshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 49 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reprodu

32、ction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95598 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions -55C TA +125C unl

33、ess otherwise specified Group A subgroups Device type Limits Unit Min Max Total absolute dc accuracy TA IOUT= 1 mA x log10 (|VIN| / 1 mV), 1 01 -0.9 0.9 dB VIN= 1 mV to 100 mV 2,3 -1.8 1.8 IOUT= 1 mA x log10 (|VIN| / 1 mV), 1 -1.5 1.5 VIN= 1 mV to 100 mV, using attenuator 2,3 -2.0 2.0 Total absolute

34、 dc accuracy transfer function versus supplies TA VS= 4.5 V to 7.5 V, IOUT= 1 mA x log10 (|VIN| / 1 mV), VIN= 1 mV to 100 mV, TA= +25C 1 01 -1.0 1.0 dB DC linearity LEdc VIN= 1 mV to 100 mV, TA= +25C 1 01 -0.6 0.6 dB Input offset voltage VOSDifferential 1 01 -200 200 V 2,3 -300 300 Slope current IYd

35、c At dc 1,2,3 01 0.98 1.02 mA Slope current versus supplies IYdc VS= 4.5 V to 7.5 V, TA= +25C 1 01 -0.4 0.4 %V Intercept voltage VXdc At dc 1 01 0.95 1.05 mV 2,3 0.90 1.10 Using attenuator, TA= +25C 1 9.0 11.0 Application resistors RA1 01 995 1005 2,3 990 1010 Provided by IHSNot for ResaleNo reprodu

36、ction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95598 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions -55C TA

37、 +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Supply current +IS+VS= 5.0 V, static conditions 1,2,3 01 15.0 mA -IS-VS= -5.0 V, static conditions 60.0 Log conformance (ac linearity) LEac Single configuration 1/ frequency = 250 MHz, Input level = -44 dBm to 0 dBm

38、4 01 -2.0 2.0 dB Single configuration 1/ frequency = 250 MHz, Input level = -42 dBm to -4 dBm 5,6 -2.5 2.5 Dual configuration 1/ frequency = 250 MHz, Input level = -60 dBm to -2 dBm 4 -2.0 2.0 Dual configuration 1/ frequency = 250 MHz, Input level = -56 dBm to -4 dBm 5,6 -2.5 2.5 AC slope current IY

39、ac f 1 MHz, 1/ 2/ TA= +25C 4 01 0.98 1.02 mA f = 30 MHz, 1/ 2/ TA= +25C 0.91 0.97 f = 60 MHz, 1/ 2/ TA= +25C 0.86 0.94 AC intercept voltage VXac f = 250 MHz 1/ 4 01 -40.84 -39.96 dBm 5,6 -40.59 -39.47 1/ If not tested, shall be guaranteed to the limits specified in table I herein. 2/ The slope is me

40、asured by linear regression over central region of transfer function. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95598 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DS

41、CC FORM 2234 APR 97 Device type 01 Case outline R Terminal number Terminal symbol 1 SIGNAL INPUT (SIG IN) 2 ATTENUATOR LOW (ATN LO) 3 ATTENUATOR COMMON (ATN COM) 4 ATTENUATOR COMMON (ATN COM) 5 ATTENUATOR INPUT (ATN IN) 6 BALANCE LIMITER 1 (BL1) 7 NEGATIVE POWER SUPPLY (-VS) 8 INTERNAL TEMPERATURE C

42、OMPENSATION (ITC) 9 BALANCE LIMITER 2 (BL2) 10 SIGNAL OUTPUT (SIG OUT) 11 SIGNAL +OUTPUT (SIG +OUT) 12 POSITIVE POWER SUPPLY (+VS) 13 LOGARITHMIC COMMON (LOG COM) 14 LOGARITHMIC OUTPUT (LOG OUT) 15 GAIN RESISTOR 2 (RG2) 16 GAIN RESISTOR 0 (RG0) 17 GAIN RESISTOR 1 (RG1) 18 CIRCUIT COMMON (CKT COM) 19

43、 ATTENUATOR OUTPUT (ATN OUT) 20 SIGNAL +INPUT (SIG +IN) FIGURE 1. Terminal connections.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95598 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION L

44、EVEL B SHEET 8 DSCC FORM 2234 APR 97 FIGURE 2. Block diagram. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95598 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 9 DSCC FORM

45、2234 APR 97 4. VERIFICATION 4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, o

46、r function as described herein. For device class M, sampling and inspection procedures shall be in accordance with MIL-PRF-38535, appendix A. 4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to qualification a

47、nd technology conformance inspection. For device class M, screening shall be in accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection. 4.2.1 Additional criteria for device class M. a. Burn-in test, method 1015 of MIL-STD-883. (1) Te

48、st condition A, B, C, D, or E. The test circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in method 1015 of MIL-STD-883. (2) TA= +125C, minimum. b. Interim and final electrical test parameters shall be as specified i