DLA SMD-5962-95610 REV A-1996 MICROCIRCUIT MEMORY DIGITAL CMOS PROGRAMMABLE LOGIC CELL ARRAY MONOLITHIC SILICON《数字的互补金属氧化物半导体 可编程逻辑电池陈列硅单片电路线型微电路》.pdf

1、SMD-59b2-95bLO REV A b O090043 129 w DEFENSE LOGISTICS AGENCY DEFENSE SUPPLY CENTER COLUMBUS 3990 BROAD STREET COLUMBUS, OH 4321 6-5000 IN REPLY REFER lo DSCC-VAS (Mr . K Rice/(DSN)850-0534/614-692-0534/ksr) OCT 3 O l936 SUBJECT: Notice of Revision (NOR) 5962-R010-97 for Standard Microcircuit Drawin

2、g (SMD) 5962-95610 Military/Industry Distribution The enclosed NOR is approved for use effective as of the date of the NOR. In accordance with MIL-STD-100 SMD holders should, as a minimum, handwrite those changes described in the NOR to sheet 1 of the subject SMD. After completion, the NOR should be

3、 attached to the subject SMD for future reference. Those companies who were listed as approved sources of supply prior to this action have agreed to actions taken on devices for which they had previously provided DSCC a certificate of compliance. This is evidenced by an existing active current certi

4、ficate of compliance on file at DSCC with a DSCC record of verbal coordination. The certificate of compliance for these devices is considered concurrence with the new revision unless DSCC is otherwise notified. If you have comments or questions, please contact Ken Rice at (DSN)850-0534/(6 14)692-053

5、4. 1 Encl Chief, Microelectronics Team Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-57b2-75b10 REV A b 0070044 Ob0 = NOTICE OF REVISION (NOR) THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. Form Approved OM5 NO, 0704

6、0188 I 1. DATE (YYMMDD) 96-1 0-04 I ublicreppwting,burden for,this wiiecon is estimated to average 2 hours per,response. induding the time for reviewin instnictions. searchin existing data DUS gathenn and maintaining the data needed and completing and rewewing the colledion of information. Senicomm

7、ents regarding #is burden slimate or anpSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITY NUMBER LISTED IN ITEM 2 OF THIS FORM. b. ADDRESS (Street, City, State, Zip Code) 5. CAGE CODE ORIGINATOR Defense Supply Center Columbus 67268 3990 Broad Street Columbus,OH 43216-5000 Last) 67268 I.

8、 TYPED NAME (First, Middle Initial, 7. CAGE CODE 2. PROCURING ACTIVITY NO. 3 6. NOR NO. 5962-ROI 0-97 8. DOCUMENT NO. 5962-9561 O I I I 2. CONFIGURATION ITEM (OR SYSTEM) TO WHICH ECP APPLIES Ail I. TITLE OF DOCUMENT MICROCIRCUIT, MEMORY, DIGITAL CMOS, PROGRAMMABLE LOGIC ELL ARRAY, MONOLITHIC SILICON

9、 3. DESCRIPTION OF REVISION 11. ECP NO. IO. REVISION LETTER a, CURRENT b. NEW A Sheet 1: Revisions ltr colum; add iiAit. Revisions description colm; add ilChanges in accordance with NOR 5962-R010-97i1. Revisions date colum; add ii96-10-04ii. Rev status above sheet nunbers 1 and IO, Revision level bl

10、ock; add IiAii. add iiAil. d. TITLE Microelectronics Team Chief Sheet IO: Table I, footnote z/ Delete the last sentence of this footnote and replace it with the following: IlCharacteriration data is taken initially and after any design or process change which may affect this parameter.I1 Revision le

11、vel block; add miAli. e. SIGNATURE f. DATE SIGNED (YYMMDD) Ray Monnin 96-10-04 14. THIS SECTION FOR GOVERNMENT USE ONLY 15a. ACTIVITY ACCOMPLISHING REVISION DSCC-VAS a. (X one) X (i) Existing document supplemented by the NOR may be used in manufacture. b. REVISION COMPLETED (Signature) c. DATE SIGNE

12、D (YYMMDD) Kenneth S. Rice 96-1 0-04 (2) Revised document must be received before manufacturer may incorporate this change. H (3) Custodian of master document shall make above revision and furnish revised document. I I b. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT c. TYPED NAME (First, Mid

13、dle Initial, Last) DSCC-VAS I Ray Monnin Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SflD-5962-95bLO = 6 0086293 Ob7 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED kktk SHEET REV III SHEET REV STATUS OF SHEETS PMIC NIA STANDARD MICROCIRCUIT D

14、RAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A REV III SHEET PREPAREDBY Kenneth Rice CHECKED BY Jeff Bowling APPROVED BY Michael A. Frye DRAWING APPROVAL DATE 96-03- 12 REVISION LEVEL DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 MI

15、CROCIRCUIT, MEMORY, DIGITAL, CMOS, 4200 GATE PROGRAMMABLE LOGIC ARRAY, MONOLITHIC SILICON I 5962-95610 SIZE 1 CAiYir8 A SHEET 1 OF 26 DESC FORM 193 JUL 94 5962-E277-96 DISTRIBUTION STATEMENT A Approved for public release, distribution IS unlimited Provided by IHSNot for ResaleNo reproduction or netw

16、orking permitted without license from IHS-,-,-SMD-5962-95bLO = 9999996 OO629V TT3 1. SCOPE 1.1 m. This drawing docunents two product assurance class levels consisting of high reliability (device classes A choice of case outlines and lead finishes are available and are Uhen available, a choice of Rad

17、iation Hardness Assurance (RHA) levels Q and M) and space application (device class V). reflected in the Part or Identifying Nunber (PIN). are reflected in the PIN. 1.2 PIN. The PIN is be as shown in the following exanple: 1111 95610 Federal RHA Device Device Case Lead stock class designator type c

18、1 ass outline finish designator (1.2.1) (See 1.2.2) designator (See 1.2.4) (See 1.2.5) 11 LA (See 1.2.3) / Drawing nunber 1.2.1 RHA desianato r. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RH

19、A marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-1 indicates a non-RHA device. 1.2.2 pevice tvae(Q . The device type(s) shall identify the circuit function as follows: Device tvw Generic nunber Circuit function Toqs

20、le Swed 84 = actual number of pins used, not maximum listed in MIL-STD-1835 132 = actual number of pins used, not maximum listed in MIL-STD-1835 j o1 I O2 SIZE STANDARD A MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 3142A -05 3142A -04 4200 gate programble array 4200 gat

21、e programble array 5962-9561 O REVISION LEVEL SHEET 2 4.1 ns 3.3 ns 1.2.3 Device class des ianator. The device class designator is a single letter identifying the product assurance level as follows: pevice reauirements docwntat i on M Vendor self-certification to the requirements for MIL-STD-883 com

22、pliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A P or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s1. The case outline(s) are as designated in MIL-STD-1835 and as follows: putline letter DeSCriDtiVe desianator Terminals packaae style

23、X CMGA15 -84 Y See figure 1 2 See figure 1 U CMGA6- 132 Pin grid array package 1 O0 Quad flat package 1 O0 Quad flat package 132 U Pin grid array package 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. DE

24、SC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-1.3 Absolute maximun ratina -u Supply voltage range to ground potential (Vcc) - - - - - DC input voltage range - - - - - - - - - - - - - - - - - Voltage applied to three-state output

25、VTS) - - - - - - - Lead temperature (soldering, 10 seconds) - - - - - - - - Thermal resistance, junction-to-case (OJc): Case )( u - - - - - - - - - - - - - - - - - - - Junction tenperature (TJ) - - - - - - - - - - - - - - - - Storage temperature range - - - - - - - - - - - - - - - - , Case outlines

26、 y, - - - - - - - - - - - - - - - - - - 1.4 Recommended owratins conditions. 6/ Case operating temperature Range(TC)- - - - - - - - - - - Supply voltage relative to ground(VCC)- - - - - - - - - - Ground voltage (GND) - - - - - - - - - - - - - - - - - - 1.5 pisital losic test ina for device classes C

27、I and V. Fault coverage measurement of manufacturing logic tests (MIL-STD-883, test method 5012)- - - - - - 2. APPLICABLE DOCUMENTS -0.5 V dc to +7.0 V dc -0.5 V dc to Vcc +0.5 V dc -0.5 V dc to Vcc +0.5 V dc +260*c See MIL-STD-1835 20“C/W 4/ +150c U -65C to +150C -55C to +125“C +4.5 V dc minim to +

28、5.5 V dc maximum O V dc u percent 2.1 S;overnment specification. standards. and handbooks. The following specification, standards, and handbooks form h part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these docunents are :hose listed in the issue of the

29、Department of Defense Index of Specifications and Standards (DoISS) and supplement :hereto, cited in the solicitation. SPECIFICATION MIL I TARY MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. STANDARDS MILITARY MIL-STD-883 - Test Methods and Procedures for Microelectro

30、nics. MIL-STD-973 - Configuration Management. MIL-STD-1835 - Microcircuit Case Outlines. HANDBOOKS MIL I TARY MIL-HDBK-103 - List of Standard Microcircuit Drawings (SMDIS). MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handboo

31、ks are available from the tandardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) Stresses above the absolute maximum rating may cause permanent damage to the device. maximum levels may degrade performance and affect reliability. indicated herein. Maxim jun

32、ction tenprature shall not be exceeded except for allowable short duration burn-in screening conditions in accordance with method 5004 of MIL-STD-883. All voltage values in this drawing are with respect to Vss. Values will be added when they become available. Extended operation at the ?/ When a ther

33、mal resistance for this case is specified in MIL-STD-1835 that value shall supersede the value iJ 5962-95610 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permit

34、ted without license from IHS-,-,-SND-59b2-95bLO 9999996 008b29b 87b M 3.3 i trica on ar r limi . Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating temperature ran

35、ge. 3.4 Electr ical test reauirements. The electrical test requirements shall be the subgroups specified in table 11A. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturerls PIN may also

36、For packages where marking of the entire SMD PIN nunber is not feasible due to space For RHA product using this option, MIL-PRF-38535. be marked as listed in MIL-HDBK-103. limitations, the manufacturer has the option of not marking the 115962-11 on the device. the RHA designator shall still be marke

37、d. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. Marking for device classes P and V shall be in accordance with 3.5.1 Cprtificat ion/comDliance mark. The certification mark for device classes Q and V shall be a llQML1l or WI1 as as required in MIL-PRF-38535, appen

38、dix required in MIL-PRF-38535. A. The conpliance mark for device class M shall be a 3.6 Certificate of com liancq. For device classes P and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein).

39、 For device class M, a certificate of conpliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance subnitted to DESC-EC prior to listing as an approved source of supply for this drawing shall

40、affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 2.2 i. . The following docunents form a part of this docunent to the extent specified herein. Unless

41、otherwise Specified, the issues of the docunents which are DOO adopted are those listed in the issue of the DODISS cited in the solicitation. Unless otherwise specified, the issues of docunents not listed in the DDISS are the issues of the docunents cited in the solicitation. AMERICAN SOCIETY FOR TE

42、STING AND MATERIALS (ASTM) ASTM Standard F1192-88 - Standard Guide for the Measurement of Single Event Phenomena from Heavy Ion Irradiation of Semiconductor Devices. (Applications for copies of ASTM publications should be addressed to the American Society for Testing and Materials, 1916 Race Street,

43、 Philadelphia, PA 19103.) ELECTRONICS INDUSTRIES ASSOCIATION CEIA) JEDEC Standard No. 17 - A Standardized Test Procedure for the Characterization of Latch-up in CMOS Integrated Circuits. (Applications for copies should be addressed to the Electronics Industries Association, 2500 Uilson Blvd., Arling

44、ton, VA 22201. (Non-Govermient standards and other publications are normally available from the organizations that prepare or These docunents also may be available in or through libraries or other informational services.) In the event of a conflict between the text of this drawing and the references

45、 cited herein, Nothing in this docunent, however, supersedes applicable laws and regulations distribute the docunents. 2.3 Order of Drecedencp. the text of this drawing takes precedence. unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Jtm rmuirementp. The individual item requireme

46、nts for device classes Q and V shall be in accordance with MIL- PRF-38535 and as specified herein or as modified in the device manufacturerls Quality Management (PMI plan. The modification in the PM plan shall not affect the form, fit, or function as described herein. The individual item requirement

47、s for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 pes isn. CO nstruction. and rhvs ical dimens ions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device

48、classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case out line(s1. 3.2.2 Terminal connections. 3.2.3 Losic block diaqram. The case outline(s) shall be in accordance with 1.2.4 herein and figure 1. The terminal connections shall be as specified on figure 2. The logic

49、block diagram shall be as specified in figure 3. STANDARD MICROCIRCUIT DRAWING DEFENSEELECTRONICSSUPPLYCENTER DAYTON, OHIO 45444 5962-9561 O REVISION LEVEL SHEET DESC FORM 193A JUL 94 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SND-5b2-75bLO = b 008b297 702 m 3.7 Certificate of CO nformance. A certificate of conformance as required for device classes Q and V in MIL-PRF