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本文(DLA SMD-5962-95619 REV C-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS 16-BIT BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf)为本站会员(brainfellow396)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-95619 REV C-2009 MICROCIRCUIT DIGITAL ADVANCED CMOS 16-BIT BUFFER LINE DRIVER WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add RHA data. Editorial changes throughout - jak. 99-07-02 Monica L. Poelking B Change ground bounce limits VOLP, VOLV, VOHP, and VOHV in table I. Update boilerplate to MIL-PRF-38535 requirements. - CFS 02-04-12 Thomas M. Hess C Update the boiler

2、plate paragraphs to current requirements as specified in MIL-PRF-38535. - jak 09-04-15 Thomas M. Hess REV SHEET REV C C C SHEET 15 16 17 REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING CHEC

3、KED BY Thanh V. Nguyen DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE APPROVED BY Thomas M. Hess MICROCIRCUIT, DIGITAL, ADVANCED CMOS, 16-BIT BUFFER/LINE DRIVER WITH THREE-

4、STATE OUTPUTS, TTL COMPATIBLE INPUTS, DRAWING APPROVAL DATE 95-05-11 MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-95619 SHEET 1 OF 17 DSCC FORM 2233 APR 97 5962-E242-09 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STAND

5、ARD MICROCIRCUIT DRAWING SIZE A 5962-95619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2233 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space applicati

6、on (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95619

7、 01 V X A Federal RHA Device Device Case Lead stock class designator type class outline finish designator (see 1.2.1) (see 1.2.2) designator (see 1.2.4) (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA lev

8、els and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit f

9、unction as follows: Device type Generic number Circuit function 01 54ACTQ16244 16-bit buffer/line driver with three-state outputs, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Devi

10、ce requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designat

11、ed in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X GDFP1-F48 48 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo re

12、production or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 3 DSCC FORM 2233 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) -0.5 V dc to +7.0

13、V dc DC input voltage range (VIN) -0.5 V dc to VCC + 0.5 V dc DC output voltage range (VOUT) . -0.5 V dc to VCC+ 0.5 V dc DC input clamp current (IIK): VIN= -0.5 V -20 mA VIN= VCC+ 0.5V +20 mA DC output clamp current (IOK): VOUT= -0.5 V -20 mA VOUT =VCC+ 0.5V. +20 mA DC output current (IOUT) per out

14、put pin 50 mA DC VCCor GND current (ICC, IGND) per pin . 400 mA Storage temperature range (TSTG) . -65C to +150C Lead temperature (soldering, 10 seconds) +300C Thermal resistance, junction-to-case (JC). See MIL-STD-1835 Junction temperature (TJ) +175C Maximum power dissipation (PD) 750 mW 1.4 Recomm

15、ended operating conditions. 2/ 3/ Supply voltage range (VCC) +4.5 V dc to +5.5 V dc Input voltage range (VIN) +0.0 V dc to VCCOutput voltage range (VOUT) +0.0 V dc to VCCMaximum low level input voltage (VIL) 0.8 V dc Minimum high level input voltage (VIH). 2.0 V dc Case operating temperature range (

16、TC). -55C to +125C Minimum input edge rate (VINfrom 0.8 V to 2.0 V or from 2.0 V to 0.8 V) (V/t) 125 mV/ns Maximum high level output current (IOH) .-24 mA Maximum low level output current (IOL) .+24 mA 1.5 Radiation features: Maximum total dose available (effective dose rate 165 mrads(Si)/s) 1 X 105

17、Rads (Si) 4/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified he

18、rein shall apply over the full specified VCCrange and case temperature range of -55C to +125C. 4/ Device type 01 is irradiated at dose rate = 50 - 300 rads (Si)/s in accordance with MIL-STD-883, method 1019, condition A, and is guaranteed to a maximum total dose specified. The effective dose rate af

19、ter extended room temperature anneal = 165 mrads (Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for this device only applies to the specified effective dose rate, or lower, environment. Provided by IHSNot for ResaleNo reproduction or networking permitt

20、ed without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2233 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standar

21、ds, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

22、DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of the

23、se documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited he

24、rein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. ELECTRONIC INDUSTRIES ALLIANCE (EIA) JESD 20 - Standardized for Description of 54/74ACXXXX and 54/74ACTXXXX Advanced High-Spee

25、d CMOS Devices. (Applications for copies should be addressed to the Electronics Industries Alliance, 2001 Eye Street, NW, Washington, DC 20006.) (Non-Government standards and other publications are normally available from the organizations that prepare or distribute the documents. These documents ma

26、y also be available in or through libraries or other informational services.) 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws

27、 and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan

28、. The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physic

29、al dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-

30、STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2233 APR 97 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as sp

31、ecified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Ground bounce load circuit and waveforms. The ground bounce load circuit and waveforms shall be as specified on figure 4. 3.2.6 S

32、witching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 5. 3.2.7 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revision control and shall be made available to the preparing and a

33、cquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full case operating

34、 temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers

35、PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for device classes

36、Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for de

37、vice class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device cl

38、ass M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this drawing shall affirm that th

39、e manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-3853

40、5 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change of product (see 6.2 herein) involving devices acquired to this drawing

41、 is required for any change as defined in MIL-PRF-38535, appendix A. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facility and applicable required documentation. Offshore documentation

42、shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 37 (see MIL-PRF-38535, appendix A). Provided by IHSNot for ResaleNo reproduction or networking pe

43、rmitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2233 APR 97 Table I. Electrical performance characteristics. Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/

44、3/ -55C TC +125C +4.5 V VCC +5.5 V VCCGroup A subgroups Limits 4/ Unit unless otherwise specified Min Max 4.5 V 1, 2, 3 4.40 V IOH= -50 A 5.5 V 1, 2, 3 5.40 1 3.86 4.5 V2, 3 3.70 1 4.86 IOH= -24 mA5.5 V2, 3 4.70 High level output voltage 3006 VOH For all inputs affecting output under test, VIH= 2.0

45、V or VIL= 0.8 V For all other inputs, VIN= VCCor GND IOH= -50 mA5/ 5.5 V 1, 2, 3 3.85 4.5 V 1, 2, 3 0.10 V IOL= +50 A5.5 V 1, 2, 3 0.10 1 0.36 4.5 V2, 3 0.50 1 0.36 IOL= +24 mA5.5 V2, 3 0.50 Low level output voltage 3007 VOL For all inputs affecting output under test, VIH= 2.0 V or VIL= 0.8 V For al

46、l other inputs, VIN= VCCor GND IOL= +50 mA5/ 5.5 V 1, 2, 3 1.65 Positive input clamp voltage VIC+For input under test, IIN= 18 mA 3022 GND 1, 2, 3 5.7 V Negative input clamp voltage VIC-For input under test, IIN= -18 mA Open 1, 2, 3 -1.2 V Input leakage current high IIHFor input under test, VIN= 5.5

47、 V For all other inputs, VIN= VCCor GND 5.5 V 1 0.1 A 3010 5.5 V 2, 3 1.0 Input leakage current low IILFor input under test, VIN= 0.0 V For all other inputs, VIN= VCCor GND 5.5 V 1 -0.1 A 3009 5.5 V 2, 3 -1.0 Three-state output leakage current IOZHOEm = 2.0 V 5.5 V 1 0.5 A high 3021 6/ For all other

48、 inputs, VIN= VCCor GND VOUT= 5.5 V 5.5 V 2, 3 10.0 M, D, P, L, R 5.5 V 1 25.0 Three-state output leakage current IOZLOEm = 2.0 V 5.5 V 1 -0.5 A low 3020 6/ For all other inputs, VIN= VCCor GND VOUT= 0.0 V 5.5 V 2, 3 -10.0 M, D, P, L, R 5.5 V 1 -25.0 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95619 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2233 APR 97 Table I. Electrical performance character

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