DLA SMD-5962-95630 REV N-2013 MICROCIRCUIT DIGITAL-LINEAR RADIATION HARDENED SINGLE 16-CHANNEL ANALOG MUX DEMUX WITH OVERVOLTAGE PROTECTION MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. Add appendix A for device type 02 only. Make editorial changes throughout. 97-04-09 R. MONNIN B Make change to 1.4, 30.2.1, IS(OFF)overvoltage and ID(OFF)overvoltage tests. - ro 97-09-12 R. MONNIN C Make change to boilerplate

2、and add device class T for device type 02. - ro 98-12-02 R. MONNIN D Add level P to table I. Make change to 1.5 and glassivation as specified under APPENDIX A. - ro 99-04-22 R. MONNIN E Make change to enable delay waveform as specified on figure 6. - ro 00-04-14 R. MONNIN F Make changes to supply vo

3、ltage and VREFto GND limits as specified under 1.3. Make clarification to paragraphs 4.4.4.2 and 4.4.4.3. - ro 04-06-25 R. MONNIN G Under 1.5, move footnote 3/ to the latch up parameter. Make correction to the RLvalue under the tON(A), tOFF(A)test as specified in table I. - ro 06-02-24 R. MONNIN H A

4、dd a junction temperature limit to paragraph 1.3 and make clarifications to the figure 3 logic diagram. - ro 09-06-17 J. RODENBECK J Add device type 03. Add paragraphs 2.2, 6.7, and Table IB. Under Table IIB, delete +IS(OFF), -IS(OFF), -ID(OFF), +ID(OFF), +ID(ON), -ID(ON)parameters. Under figure A-1

5、, backside metallization, delete the word “none” and replace with “silicon”. Update boilerplate paragraph to current MIL-PRF-38535 requirements. - ro 11-01-26 C. SAFFLE K Add device types 04 and 05. Make changes to paragraphs 1.2.2, 1.3, 1.4, 1.5, 4.4.4.2, A.1.2.2, A.1.2.4, Table IA, Table IB, Table

6、 IIA, Table IIB, and figure 1. Delete paragraph 4.4.4.2.1. - ro 11-06-28 C. SAFFLE L Add case outline Z. Make change to paragraph 3.2.5. Delete figure 4 radiation exposure circuit. Delete device class M requirements. - ro 13-05-02 C. SAFFLE M Add device types 04 and 05 to Table IIB. Delete LDR, HDR,

7、 and EDLRS references from paragraphs 1.2.2 and A.1.2.2. - ro 13-07-03 C. SAFFLE N Add device type 05 to the Analog input overvoltage range (power on/off) parameter as specified under paragraph 1.3. - ro 13-08-20 C. SAFFLE REV SHEET REV N N N N N N N N N N N SHEET 15 16 17 18 19 20 21 22 23 24 25 RE

8、V STATUS REV N N N N N N N N N N N N N N OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RAJESH PITHADIA DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGEN

9、CIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY MICHAEL FRYE MICROCIRCUIT, DIGITAL-LINEAR, RADIATION HARDENED, SINGLE 16-CHANNEL ANALOG MUX / DEMUX WITH OVERVOLTAGE PROTECTION, MONOLITHIC SILICON DRAWING APPROVAL DATE 95-08-23 AMSC N/A REVISION LEVEL N SIZE A CAGE CODE 67268

10、 5962-95630 SHEET 1 OF 25 DSCC FORM 2233 APR 97 5962-E545-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHSSTANDARD MICROCIRCUIT DRAWING SIZE A 5962-95630 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL N SHEET 2 DSCC FORM 2234 APR 97 1.

11、SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device class Q), space application (device class V) and for appropriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are

12、reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the user is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their a

13、cceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95630 01 V X C Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing nu

14、mber 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device typ

15、e Generic number Circuit function 01 HS-1840RH Radiation hardened dielectrically isolated (DI) CMOS single 16-channel analog MUX / DEMUX with high impedance analog input overvoltage protection 02 HS-1840ARH Radiation hardened DI BiCMOS single 16-channel analog MUX / DEMUX with high impedance analog

16、input overvoltage protection 03 HS-1840BRH Radiation hardened DI BiCMOS single 16-channel analog MUX / DEMUX with high impedance analog input overvoltage protection 04 HS-1840AEH Radiation hardened DI BiCMOS single 16-channel analog MUX / DEMUX with high impedance analog input overvoltage protection

17、. 05 HS-1840BEH Radiation hardened DI BiCMOS single 16-channel analog MUX / DEMUX with high impedance analog input overvoltage protection. Provided by IHSNot for Resale-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95630 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL N SHEET 3 DSCC F

18、ORM 2234 APR 97 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q, V Certification and qualification to MIL-PRF-38535 T Certification and qualification to MIL-PRF-38535 wi

19、th performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X CDIP2-T28 28 Dual-in-line Y CDFP3-F28 28 Flat pack Z

20、CDFP3-F28 28 Flat pack with grounded lid 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V. 1.3 Absolute maximum ratings. 1/ Supply voltage between V+ and V- : Device type 01 . +40 V Device types 02, 03, 04, and 05 +33 V Supply voltage between V+ and G

21、ND : Device type 01 . +20 V Device types 02, 03, 04, and 05 +16.5 V Supply voltage between V- and GND : Device type 01 . -20 V Device types 02, 03, 04, and 05 -16.5 V VREFto GND : Device type 01 . +20 V Device types 02, 03, 04, and 05 . +16.5 V Digital input overvoltage range (GND) - 4 V) VA (VREF)

22、+ 4 V) Analog input overvoltage range (power on/off): Device type 01 . -25 V VS +25 V Device types 02, 03, 04, and 05 -35 V VS +35 V Storage temperature range -65C to +150C Junction temperature (TJ) +175C Maximum package power dissipation (PD): 2/ Case X . 1600 mW Cases Y and Z . 1400 mW Lead temper

23、ature (soldering, 10 seconds) +275C Thermal resistance, junction-to-case (JC) See MIL-STD-1835 Thermal resistance, junction-to-ambient (JA): Case X . 83.1C/W Cases Y and Z . 49.1C/W _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the ma

24、ximum levels may degrade performance and affect reliability. 2/ The derating factor for case X shall be 20.4 mW/C, above TA= +95C, and for cases Y and Z shall be 18.5 mW/C above TA= +95C. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHSSTANDARD MICROCIRCU

25、IT DRAWING SIZE A 5962-95630 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL N SHEET 4 DSCC FORM 2234 APR 97 1.4 Recommended operating conditions. Positive supply voltage (V+): Device types 01, 02, and 04 +15 V Device types 03 and 05 . +12 V 10% Negative supply voltage (V-): Device ty

26、pes 01, 02, and 04 -15 V Device types 03 and 05 . -12 V 10% VREF5 V dc VAH4.0 V dc VAL0.8 V dc VEN0.8 V dc Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available: high dose rate tests - dose rate = 50 300 rad(Si)/s Device classes Q and V: Device

27、 type 01 . 200 krads(Si) Device types 02, 03, 04 and 05 300 krads(Si) Device class T: Device type 02 . 100 krads(Si) ELDRS test (Low dose rate 10 mrad(Si)/s: Device class V: Device types 02 and 03 . Not production tested 3/ Device types 04 and 05 50 krads(Si) 3/ 4/ Single event phenomena (SEP) : No

28、SEL occurs at effective linear energy threshold (LET): Device type 01 . 110 MeV/cm2/mg 5/ Device types 02, 03, 04, and 05 . Latch up free 5/ Dose rate induced latch up: Device type 01 . None 6/ Device types 02, 03, 04, and 05 Not tested Dose rate upset: Device type 01 . 1 x 108rads(Si)/s Device type

29、s 02, 03, 04, and 05 Not tested For device types 02, 03, 04 and 05, the manufacturer supplying RHA parts on this drawing has performed characterization testing to a level of 150 krad(Si) that demonstrates the parts do not exhibit enhanced low dose rate sensitivity (ELDRS) according to MIL-STD-883 me

30、thod 1019 paragraph 3.13.1.1. Therefore, this part may be considered ELDRS free. Testing beyond 150 krads(Si) was not performed. _ 3/ For device types 02, 03, 04 and 05, the manufacturer supplying RHA parts on this drawing has performed characterization testing to a level of 150 krad(Si) at low and

31、high dose rate in accordance with MIL-STD-883 method 1019 paragraph 3.13.1.1. Therefore, this part may be considered ELDRS free. Testing beyond 150 krads(Si) was not performed. 4/ Devices 04 and 05 are production lot acceptance tested on a wafer by wafer basis to 50 krads(Si) at low dose rate ( 10 m

32、rad(Si)/s). 5/ Device type 01 uses dielectrically isolated (DI) / CMOS technology and latch-up is physically not possible. Device types 02, 03, 04, and 05 use dielectrically isolated (DI) technology and latch-up is physically not possible. 6/ Guaranteed by process design, but not tested, unless spec

33、ified in table IA herein. Provided by IHSNot for Resale-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95630 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL N SHEET 5 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following spe

34、cification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General

35、Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawi

36、ngs. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Non-Government publications. The following document(s) form a part of this document to the extent spec

37、ified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. ASTM INTERNATIONAL (ASTM) ASTM F1192 - Standard Guide for the Measurement of Single Event Phenomena (SEP) Induced by Heavy Ion Irradiation of semiconductor Devices. (Copies of the

38、se documents are available online at http:/www.astm.org or from ASTM International, 100 Barr Harbor Drive, P.O. Box C700, West Conshohocken, PA, 19428-2959). 2.3 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing

39、 takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified

40、 herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, constructi

41、on, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall

42、be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagrams. The logic diagrams shall be as specified on figure 3. 3.2.5 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer under document revis

43、ion level control and shall be made available to the preparing and acquiring activity upon request. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHSSTANDARD MICROCIRCUIT DRAWING SIZE A 5962-95630 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LE

44、VEL N SHEET 6 DSCC FORM 2234 APR 97 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as specified in table IA and shall apply over the full ambient o

45、perating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table IA. 3.5 Marking. The part shall be marked with the PIN listed in 1.2 herein. In addition, the manu

46、facturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using this option, the RHA designator shall still be marked. Marking for devic

47、e classes Q, T and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q, T and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. 3.6 Certificate of compliance. For device classes Q, T and V, a certificate of compliance sh

48、all be required from a QML-38535 listed manufacturer in order to supply to the requirements of this drawing (see 6.6.1 herein). The certificate of compliance submitted to DLA Land and Maritime-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers pr

49、oduct meets, for device classes Q, T and V, the requirements of MIL-PRF-38535 and herein. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q, T and V in MIL-PRF-38535 shall be provided with each lot of microcircuits delivered to this drawing. Provided by IHSNot for Resale-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 59