DLA SMD-5962-95635 REV D-1999 MICROCIRCUIT DIGITAL 16-BIT MICROCONTROLLER RADIATION HARDENED MONOLITHIC SILICON《数字16-BIT反射微型控制器硅单片电路线型微电路》.pdf

1、SMD-5962-75635 REV D W 96 OL4Lh40 356 e (YYMMDD) NOTICE OF REVISION (NOR) 99-06-01 THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. 1 1. DATE I Form Approved OMB NO. 0704-0188 1. ORIGINATOR L. TYPED NAME (First, Middle Initial, Last) LEASE DO NOT RETURN YOUR COMPLETED FORM

2、TO EITHER OF THESE ADDRESSED. RETURN COMPLETED FORM TO THE jOVERNMEM ISSUING CONTRACTING OFFICER FOR THE CONTRACT/ PROCURING ACTIVITY NUMBER LISTED IN ITEM 2 OF THIS FORM. b. ADDRESS (Street, City, State, Zip Code) 5. CAGE CODE 7. CAGE CODE 6. NOR NO. Defense Supply Center Columbus 67268 5962-R066-9

3、9 8. DOCUMENT NO. 67268 5962-95635 3990 East Broad Street Columbus, OH 43216-5000 2. PROCURING ACTIVITY NO. 10. REVISION LETTER i. TITLE OF DOCUMENT MICROCIRCUIT, DIGITAL, 16-BIT MICROCONTROLLER, RADIATION HARDENED, MONOLITHIC SILICON a. CURRENT b. NEW C D 11. ECP NO. NIA 13. DESCRIPTION OF REVISION

4、 Sheet 1: Revisions Itr column; add “D“. Revisions description column; add “Changes in accordance with NOR 596243066-99“. Revisions date column; add 99-06-01“. Revision level block; change from “C“ to “D“. Rev status of sheets; for sheet 1, change from “C“ to “W. For sheets 4 and 28 through 33, add

5、“D“. to this document.“ Revision level block; add “D“. Sheets 4: Add new paragraph ac follows: “3.1.1 Microcircuit die. For the requirements for microcircuit die, see appendix A Sheets 28 through 33: Add attached appendix A. Continued on next sheets. x I. (Xone) (1) Existing document supplemented by

6、 the NOR may be used In manufacture. (2) Revised document must be received before manufacturer may incorporate this change. (3) Custodian of master document shall make above revision and furnish revised document. DSCC-VAC 1. ACTIVITY AUTHORIZED TO APPROVE CHANGE FOR GOVERNMENT I Monica L. Poelking c

7、. TYPED NAME (First, Middle Initial, Last) j. TITLE Chief, Custom Microelectronics Team b. REVISION COMPLETED (Signature) Thanh V. Nguyen Ea. ACTIVITY ACCOMPLISHING REVISION DSCC-VAC c. DATE SIGNED (YYMMDD) 99-06-01 DD Form 1695, APR 92 e. SIGNATURE Monica L. Poelking f. DATE SIGNED (YYMMDD) 99-06-0

8、1 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SUD-59b2-75635 REV D E 9999b 0141641 O92 Il APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95635 Document No: 5962-95635 Revision: D Sheet: 2 of 7 NOR NO: 596243066-99 10. SCOPE 10.1 Scope. This appen

9、dix establishes minimum requirements for microcircuit die to be supplied under the Qualified Manufacturers List (QML) Program. QML microcircuit die meeting the requirements of MIL-PRF-38535 and the manufacturers approved QM plan for use in monolithic microcircuits, multichip modules (MCMs), hybrids,

10、 electronic modules, or devices using chip and wire designs in accordance with MIL-PRF-38534 are specified herein. Two product assurance classes consisting of military high reliability (device class Q) and space application (device Class V) are reflected in the Part or Identification Number (PIN). W

11、hen available a choice of Radiation Hardiness Assurance (RHA) levels are reflected in the PIN. 10.2 m. The PIN shall be as shown in the following example: 59,62 i 95653 T t k Federal RHA Device Device Die Die Stock class designator type class code Details designator (see 10.2.1) (see 10.2.2) designa

12、tor (see 10.2.4) (see 10.2.3) : Drawing Number 10.2.1 RHA desianator. Device classes Q and V RHA identified die shall meet the MIL-PRF-38535 specified RHA levels. A dash (-) indicates a non-RHA die. 10.2.2 Device tvDe(s). The device type(s) shall identify the circuit function as follows: Device twe

13、Generic number Circuit function o1 HS- RTX201 OR H 16-bit microcontroller radiation hardened, SOS 10.2.3 Device class desianator. Device class Device reauirements documentation QorV Certification and qualification to the die requirements of MIL-PRF-38535. 10.2.4 Die Details. The die details designat

14、ion shall be a unique letter which designates the dies physical dimensions, bonding pad location(s) and related electrical function(s), interface materials, and other assembly related information, for each product and variant supplied to this appendix. 10.2.4.1 Die Phvsical dimensions. Die Types o1

15、Figure number A- 1 5962-95635 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SflD-5962-95b35 REV D 111 99b 044Lb42 r27

16、 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95635 Document No: 5962-95635 Revision: D Sheet: 3 of 7 NOR NO: 5962-R066-99 SIZE A STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 D REVISION LEVEL 5962-95635 SHEET 29 Provided by IHSNot for ResaleNo reproduction

17、 or networking permitted without license from IHS-,-,-SMD-5962-95b35 REV D m b 0141643 b5 1111 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95635 Document No: 5962-95635 Revision: D Sheet: 4of 7 NOR NO: 5962-R066-99 30. REQUIREMENTS 30.1 Item Reauirements. The individual item requirements for devi

18、ce classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (OM) plan. The modification in the QM plan shall not affect the form, fit or function as described herein. specified in MIL-PRF-38535 and the manufacture

19、rs QM plan, for device classes Q and V and herein. 30.2 Desian. construction and Rhvsical dimensions. The design, construction and physical dimensions shall be as 30.2.1 Die Phvsical dimensions. The die physical dimensions shall be as specified in 10.2.4.1 and on figure A-1. 30.2.2 Die bondina Dad l

20、ocations and electrical functions. The die bonding pad locations and electrical functions shall be 30.2.3 Interface materials. The interface materials for the die shall be as specified in 10.2.4.3 and on figure A-1 . 30.2.4 Assemblv related information. The assembly related information shall be as s

21、pecified in 10.2.4.4 and figure A-1 . 30.2.5 Radiation exposure circuit. The radiation exposure circuit shall be as defined within paragraph 3.2.4 of the body of as specified in 10.2.4.2 and on figure A-1. this document. 30.3 Electrical performance characteristics and post- irradiation parameter lim

22、its. Unless otherwise specified herein, the electrical Performance characteristics and post-irradiation parameter limits are as specified in table I of the body of this document. 30.4 Electrical test reauirements. The wafer probe test requirements shall include functional and parametric testing suff

23、icient to make the packaged die capable of meeting the electrical performance requirements in table I. 30.5 Marking. As a minimum, each unique lot of die, loaded in single or multiple stack of carriers, for shipment to a customer, shall be identified with the wafer lot number, the certification mark

24、, the manufacturers identification and the PIN listed in 10.2 herein. The certification mark shall be a “QML“ or “Q“ as required by MIL-PRF-38535. 30.6 Certification of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order

25、 to supply to the requirements of this drawing (see 60.4 herein). The certificate of compliance submitted to DSCC-VA prior to listing as an approved source of supply for this appendix shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and

26、 the requirements herein. 30.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 shall be provided with each lot of microcircuit die delivered to this drawing. 40. QUALITY ASSURANCE PROVISIONS 40.1 SamDlina and insDection. For device cla

27、sses Q and V, die sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturers Quality Management (QM) plan. The modifications in the QM plan shall not affect the form, fit or function as described herein. 5962-95635 REVISION LEVEL SHEET STA

28、NDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-59b2-95b35 REV D W 999999b OL41544 8T1 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95635

29、Document No: 5962-95635 Revision: D Sheet: 5 of 7 NOR NO: 5962-R066-99 40.2 Screeninq. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and as defined in the manufacturers QM plan. As a minimum it shall consist of: a) Wafer Lot acceptance for Class V product using the

30、 criteria defined within MIL-STD-883 TM 5007. b) 100% wafer probe (see paragraph 30.4). c) 100% internal visual inspection to the applicable class Q or V criteria defined within MIL-STD-883 TM2010 or the alternate procedures allowed within MIL-STD-883 TM5004. 40.3 Conformance inspection. 40.3.1 Grou

31、p E insDection. Group E inspection is required only for parts intended to be identified as radiation assured (see 30.5 herein). RHA levels for device classes Q and V shall be as specified in MIL-PRF-38535. End point electrical testing of packaged die shall be as specified in table IIA herein. Group

32、E tests and conditions are as specified within paragraphs 4.4.4.1,4.4.4.1.1, and4.4.4.2. 50. DIE CARRIER 50.1 Die carrier reauirements. The requirements for the die carrier shall be in accordance with the manufacturers QM plan or as specified in the purchase order by the acquiring activity. The die

33、carrier shall provide adequate physical, mechanical and electrostatic protection. 60. NOTES 60.1 Intended use. Microcircuit die conforming to this drawing are intended for use in microcircuits built in accordance with MI L-PRF-38535 or MIL-PRF-38534 for government microcircuit applications (original

34、 equipment), design applications and logistics purposes. 60.2 Comments. Comments on this appendix should be directed to DSCC-VA, Columbus, Ohio, 43216-5000 or telephone (61 4)-692-0674. 60.3 Abbreviations, svmbols and definitions. The abbreviations, symbols, and definitions used herein are defined w

35、ith MIL-PRF-38535 and MIL-STD-1331. 60.4 Sources of SUDDV for device classes Q and V. Sources of supply for device classes Q and V are listed in QML-38535. The vendors listed within QML-38535 have submitted a certificate of compliance (see 30.6 herein) to DSCC-VA and have agreed to this drawing. 596

36、2-95635 REVISION LEVEL SHEET STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SflD-59b2-95b35 REV D D b OL41b45 738 E APPENDIX A APPENDIX A FO

37、RMS A PART OF SMD 5962-95635 Document No: 5962-95635 Revision: D Sheet: 6 of 7 NOR NO: 5962-R066-99 FIGURE A-1 o DIE PHYSICAL DIMENSIONS Die Size: Die Thickness: 9240 x 9530 microns. 21 +2 mils. o DIE BONDING PAD LOCATIONS AND ELECTRICAL FUNCTIONS The following metallization diagram supplies the loc

38、ations and electrical functions of the bonding pads. The internal metallization layout and alphanumeric information contained within this diagram may or may not represent the actual circuit defined by this SMD. NOTE: Pad numbers reflect terminal numbers when placed in case outline Y (see figure 1).

39、5962-95635 REVISION LEVEL STANDARD MICROCIRCUIT DRAWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 4321 6-5000 DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-SMD-5962-55635 REV D 1811 b 0343646 674 W STANDARD MICROCIRCUIT DR

40、AWING DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 APPENDIX A APPENDIX A FORMS A PART OF SMD 5962-95635 5962-95635 SIZE A REVISION LEVEL SHEET D 33 o INTERFACE MATERIALS Metal 1: AlSi 7.0kA IlkA Metal 2 (Top): AlSi 1o.okA +lkA Backside Metallization None Glassivation Type: PSG Thickness

41、13kA tl.5kA Substrate: Silicon on Sapphire (SOS) o ASSEMBLY RELATED INFORMATION Substrate Potential: Insulator. Document No: 5962-95635 Revision: D Sheet: 7of7 NOR NO: 5962-RO66-99 DSCC FORM 2234 APR 97 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,

42、-STANDARD MICROCIRCUIT DRAWING BULLETIN DATE: 99-06-01 Approved sources of supply for SMD 5962-95635 are listed below for immediate acquisition information only and shall be added to MIL-HDBK-103 and QML-38535 during the next revision. MIL-HDBK-103 and QML-38535 will be revised to include the additi

43、on or deletion of sources. The vendors listed below have agreed to this drawing and a certificate of compliance has been submitted to and accepted by DSCC-VA. This bulletin is superseded by the next dated revision of MIL-HDBK-103 and QML-38535. Standard Vendor Vendor number PIN 11 microcircu; drawin

44、g 1 CAGE 1 similar I 5962F9563501 V9A 34371 HSO-RTX201 ORH-Q - 1/ Caution. Do not use this number for item acquisition. Items acquired to this number may not satisfy the performance requirements of this drawing. Vendor CAGE number 34371 Vendor name and address Harris Semiconductor P.O. Box 883 Melbo

45、urne, FL 32902-0883 The information contained herein is disseminated for convenience only and the Government assumes no liability whatsoever for any inaccuracies in the information bulletin. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-NOTICE OF R

46、EVISION (NOR) THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. I Jublic reporting burden for this collection is estimated to average 2 hours per response includin the time for review jata sou-. atheflng and maintainin the data need+. and cpnPl.eng and renewk the ooihon oi i

47、nfomation.%nd comments regarding this urden ern?rations an8 add “C“. Revisions description column; add “Changes in accordance with NOR 5962-Rol 4-99. Revisions date column; add 98-1 1-1 O“. Revision level block; change from 8“ to “C“. Rev stahis of sheets; for sheets 1 and 5, change from 6 to C“. Fo

48、r sheet 21, add “C“. Sheet 5: Table I, Low output voltage, VOL, conditions column; change 1oL from “4.0 v“ to “4.0 mA“ Table I, input leakage current, II, pre-irradiation tmits; change from “-1 .O p.A Min.“ to “5.0 p.A Min.“ and from 1 .O pA Max.“ to “5.0 pA Max.“ for subgroups 1 and 3. Change from

49、“5.0 pA Min.“ to -10.0 pA Min.“ and from “5.0 p-4 Max.“ to “10.0 pA Max.“ for subgroup 2. Post-irradiation hits; change from 5.0 pA Min.“ to “-10.0 p-4 Min.“ and from “5.0 pA Max.“ to 1 0.0 pA Max.“ for subgroup 1. Table I, Standby power suppy current, ICCSB, pre-irradiation limits; change from “500 pA Max.“ to “3.0 mA Max.“ for subgroups 1 and 3. Revision level block; ch