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本文(DLA SMD-5962-95646 REV B-2008 MICROCIRCUIT DIGITAL ADVANCED BIPOLAR CMOS 20-BIT BUS-INTERFACE D-TYPE LATCH WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON《单片硅TTL兼.pdf)为本站会员(jobexamine331)主动上传,麦多课文库仅提供信息存储空间,仅对用户上传内容的表现方式做保护处理,对上载内容本身不做任何修改或编辑。 若此文所含内容侵犯了您的版权或隐私,请立即通知麦多课文库(发送邮件至master@mydoc123.com或直接QQ联系客服),我们立即给予删除!

DLA SMD-5962-95646 REV B-2008 MICROCIRCUIT DIGITAL ADVANCED BIPOLAR CMOS 20-BIT BUS-INTERFACE D-TYPE LATCH WITH THREE-STATE OUTPUTS TTL COMPATIBLE INPUTS MONOLITHIC SILICON《单片硅TTL兼.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with the notice of revision 5962-R151-96. - jak 96-06-14 Thomas M. Hess B Redrawn with changes. Update boilerplate to MIL-PRF-38535 requirements. - jak 08-08-01 Thomas M. Hess REV SHET REV B B B B SHEET 15 16 17 18 REV STATU

2、S REV B B B B B B B B B B B B B B OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY Thomas M. Hess DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY Thomas M. Hess COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPA

3、RTMENTS APPROVED BY Monica L. Poelking AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-11-09 MICROCIRCUIT, DIGITAL, ADVANCED BIPOLAR CMOS, 20-BIT BUS-INTERFACE D-TYPE LATCH WITH THREE-STATE OUTPUTS, TTL COMPATIBLE INPUTS, MONOLITHIC SILICON AMSC N/A REVISION LEVEL B SIZE A CAGE CO

4、DE 67268 5962-95646 SHEET 1 OF 18 DSCC FORM 2233 APR 97 5962-E471-08 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95646 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 2 DSC

5、C FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Numb

6、er (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 - 95646 01 Q X A Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (

7、see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A speci

8、fied RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 54ABT16841 20 bit bus-interface D-type latch with three-state o

9、utputs, TTL compatible inputs 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class leve

10、l B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style X GDFP1-F56 56 Flat pack 1

11、.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95646 DEFENSE SUP

12、PLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ 2/ 3/ Supply voltage range (VCC) .-0.5 V dc to +7.0 V dc DC input voltage range (VIN) .-0.5 V dc to + 7.0 V dc 4/ DC output voltage range (VOUT) -0.5 V dc to + 5.5 V dc 4/ DC

13、 output current (IOL) (per output) +96 mA DC input clamp current (IIK) (VIN 0.0 V) -18 mA DC output clamp current (IOK) (VOUT 0.0 V) -50 mA Storage temperature range (TSTG) -65C to +150C Maximum power dissipation (PD) 1018 mW 5/ Lead temperature (soldering, 10 seconds) .+300C Thermal resistance, jun

14、ction-to-case (JC) See MIL-STD-1835 Junction temperature (TJ) .+175C 1.4 Recommended operating conditions. 2/ 3/ Supply voltage range (VCC) .+4.5 V dc to +5.5 V dc Input voltage range (VIN) .+0.0 V dc to VCCOutput voltage range (VOUT) .+0.0 V dc to VCCMaximum low level input voltage (VIL) 0.8 V Mini

15、mum high level input voltage (VIH) .2.0 V Maximum high level output current (IOH) .-24 mA Maximum high level output current (IOL) .+48 mA Maximum input rise or fall rate (t/V) .10 ns/V Maximum power up ramp rate (t/VCC) . 200 s/V Ambient operating temperature range (TA) .-55C to +125C _ 1/ Stresses

16、above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ Unless otherwise noted, all voltages are referenced to GND. 3/ The limits for the parameters specified herein shall apply over the f

17、ull specified VCCrange and case temperature range of -55C to +125C. 4/ The input and output negative voltage ratings may be exceeded provided that the input and output clamp current ratings are observed. 5/ Power dissipation values are derived using the formula PD= VCCICC+ nVOLIOL, where VCCand IOLa

18、re as specified in 1.4 above, ICCand VOLare as specified in table I herein, and n represents the total number of outputs. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95646 DEFENSE SUPPLY CENTER COLUMBUS C

19、OLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the is

20、sues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Stand

21、ard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or from the Standardization Document

22、 Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws a

23、nd regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan.

24、The modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical

25、 dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connec

26、tions. The terminal connections shall be as specified on figure 1. 3.2.3 Truth table. The truth table shall be as specified on figure 2. 3.2.4 Logic diagram. The logic diagram shall be as specified on figure 3. 3.2.5 Ground bounce load circuit and waveforms. The ground bounce load circuit and wavefo

27、rms shall be as specified on figure 4. 3.2.6 Switching waveforms and test circuit. The switching waveforms and test circuit shall be as specified on figure 5. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performanc

28、e characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95646 DEFE

29、NSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 5 DSCC FORM 2234 APR 97 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part sh

30、all be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using th

31、is option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V

32、shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in order

33、 to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prior

34、to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A c

35、ertificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA

36、of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. 3.9 Verification and review for device class M. For device class M, DSCC, DSCCs agent, and the acquiring activity retain the option to review the manufacturers facil

37、ity and applicable required documentation. Offshore documentation shall be made available onshore at the option of the reviewer. 3.10 Microcircuit group assignment for device class M. Device class M devices covered by this drawing shall be in microcircuit group number 129 (see MIL-PRF-38535, appendi

38、x A). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95646 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characterist

39、ics. Limits 3/ Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ -55C TA +125C +4.5 V VCC +5.5 V unless otherwise specified VCCGroup A subgroups Min Max Unit Negative input clamp voltage 3022 VICFor input under test IIN= -18 mA 4.5 V 1, 2, 3 -1.2 V 4.5 V 1, 2, 3 2.5 V IOH= -3.0 mA 5.0 V

40、1, 2, 3 3.0 High level output voltage 3006 VOHFor all inputs affecting output under test VIN= 2.0 V or 0.8 V IOH= -24 mA 4.5 V 1, 2, 3 2.0 Low level output voltage 3007 VOLFor all inputs affecting output under test, VIN= 2.0 V or 0.8 V IOL= 48 mA 4.5 V 1, 2, 3 0.55 V Input current II4/ For input und

41、er test VIN= VCC or GND 5.5 V 1, 2, 3 5.0 A Three-state output leakage current high 3021 IOZH5/ For control inputs affecting output under test, VIN= 2.0 V or 0.8 V VOUT= 2.7 V, OE 2.0 V 5.5 V 1, 2, 3 10.0 A Three-state output leakage current low 3020 IOZL5/ For control inputs affecting output under

42、test, VIN= 2.0 V or 0.8 V VOUT= 0.5 V OE 2.0 V 5.5 V 1, 2, 3 -10.0 A Off-state leakage current IOFFFor input or output under test VINor VOUT= 4.5 V 0.0 V 1 100 A High-state leakage current ICEXFor output under test, VOUT= 5.5 V Outputs at high logic state 5.5 V 1, 2, 3 50 A Short circuit current 301

43、1 IOS6/ VOUT= 2.5 V 5.5 V 1, 2, 3 -50 -180 mA Quiescent supply current delta ICC7/ For input under test VIN= 3.4 V For all other inputs VIN= VCCor GND 5.5 V 1, 2, 3 1.5 mA Quiescent supply current, output high 3005 ICCH5.5 V 1, 2, 3 0.5 mA Quiescent supply current, output high 3005 ICCH5.5 V 1, 2, 3

44、 89 mA Quiescent supply current, output high 3005 ICCHFor all other inputs VIN= VCCor GND VOUT= 0 A 5.5 V 1, 2, 3 0.5 mA See footnotes at end of table.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95646 DEF

45、ENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL B SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Limits 3/ Test and MIL-STD-883 test method 1/ Symbol Test conditions 2/ -55C TA +125C +4.5 V VCC +5.5 V unless otherwise specified VCCGrou

46、p A subgroups Min Max Unit Input capacitance 3012 CINTA= +25C, VIN= 2.5 V or 0.5 V See 4.4.1b 5.0 V 4 10pF Output capacitance 3012 COUTTA= +25C, VOUT= 2.5 V or 0.5 V See 4.4.1b 5.0 V 4 15pF Low level ground bounce noise VOLP8/ 5.0 V 4 1700mV Low level ground bounce noise VOLV8/ 5.0 V 4 -1800mV High

47、level VCCbounce noise VOHP8/ 5.0 V 4 1900mV High level VCCbounce noise VOHV8/ VIH= 3.0 V, VIL= 0.0 V TA= +25C See figure 4 See 4.4.1d+ 5.0 V 4 -700mV 4.5 V 7, 8 L H Functional test 3014 9/ VIH= 2.0 V, VIL= 0.8 V Verify output VOSee 4.4.1c 5.5 V 7, 8 L H 5.0 V 9 Pulse duration LE high or low tw4.5 V

48、and 5.5 V 10, 11 4.0 ns 5.0 V 9 Set up time data before LE tsu4.5 V and 5.5 V 10, 11 3.0 ns 5.0 V 9 Hold time data after LE thCL= 50 pF minimum RL= 500 See figure 5 4.5 V and 5.5 V 10, 11 2.6 ns 5.0 V 9 1.1 4.3 tPHL110/ CL= 50 pF minimum RL= 500 See figure 5 4.5 V and 5.5 V 10, 11 1.1 5.7 ns 5.0 V 9 1.6 4.5 Propagation delay time, Dn to Qn 3003 tPLH110/ CL= 50 pF minimum RL= 500 See figure 5 4.5 V and 5.5 V 10, 11 1.6 5.3 ns See footnotes at end of table Provided by IHSNot for ResaleNo reproduction or networking pe

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