DLA SMD-5962-95669 REV C-2005 MICROCIRCUIT LINEAR RADIATION HARDENED SAMPLE AND HOLD AMPLIFIER MONOLITHIC SILICON《抗辐射的取样和持有放大器硅单片电路线型微电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Changes in accordance with N.O.R. 5962-R264-97. 97-04-04 R. MONNIN B Make changes to 1.2 and 1.3. Redrawn. - ro 99-06-30 R. MONNIN C Add a dose rate footnote under paragraph 1.5 and Table I. Delete paragraphs 4.4.4.2, 4.4.4.3, and 6.7. - ro 05-10

2、-05 R. MONNIN REV SHET REV SHET REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43218-3990 http:/www.dscc.dla.mil THIS

3、DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL FRYE AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-11-09 MICROCIRCUIT, LINEAR, RADIATION HARDENED, SAMPLE AND HOLD AMPLIFIER, MONOLITHIC SILICON AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-95669 SHEET

4、1 OF 14 DSCC FORM 2233 APR 97 5962-E517-05 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95669 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOP

5、E 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available,

6、a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95669 01 V C X Federal stock class designator RHA designator (see 1.2.1) Device type (see 1.2.2)Device class designatorCase outline (see 1.2.4) Lead finish (se

7、e 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are ma

8、rked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-2420RH Radiation hardened, D.I. sample and hold amplifier 1.2.3 Device class designato

9、r. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, append

10、ix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual in line 1.2.5 Lead finish. The lead finish is as sp

11、ecified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535, appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95669 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3

12、990 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Voltage between +VSand -VS. +40 V Differential input voltage (VIND) . 24 V Digital input voltage ( S /H pin) . +8 V, -15 V Output current Short circuit protected Maximum package dissipation (PD) at TA= +125C . 0.67 W

13、 2/ Junction temperature (TJ) +175C Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +275C Thermal resistance, junction-to-case (JC) 20C/W Thermal resistance, junction-to-ambient (JA) . 75C/W 1.4 Recommended operating conditions. Supply voltage range (VS) . 15 V Analo

14、g input voltage 10 V Low input voltage (VIL) 0 V to 0.8 V, maximum High input voltage (VIH) . 2.0 V to 5.0 V Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features: Maximum total dose available (dose rate = 50 300 rads (Si)/s) 100 Krads (Si) 3/ Latch up . None 4/ 2. APPLICAB

15、LE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT

16、 OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. _ 1/ Stresses above the absolute maximum ra

17、ting may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ If device power exceeds package dissipation capacity, provide heat sinking or derate linearly (the derating is based on the JA) at the following rate : 13.3 mW/C

18、. 3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A. 4/ Not applicable for this technolo

19、gy. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95669 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 -

20、 List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/assist.daps.dla.mil/quicksearch/ or http:/assist.daps.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphi

21、a, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtai

22、ned. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form

23、, fit, or function as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimen

24、sions shall be as specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outline. The case outline shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on

25、figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter l

26、imits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part

27、shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product using

28、this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and

29、V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufacturer in ord

30、er to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DSCC-VA prio

31、r to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. 3.7 Certificate of conformance. A

32、 certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-V

33、A of change of product (see 6.2 herein) involving devices acquired to this drawing is required for any change that affects this drawing. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95669 DEFENSE SUPPLY CE

34、NTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxInput offset voltage VIO1 01 -4 +4 mV 2,3

35、-6 +6 M,D,P,L,R 1 -6 +6 Input bias current +IIB1 01 -200 +200 nA 2,3 -400 +400 M,D,P,L,R 1 -400 +400 -IIB1 01 -200 +200 2,3 -400 +400 M,D,P,L,R 1 -400 +400 Input offset current IIO1 01 -50 +50 nA 2,3 -100 +100 M,D,P,L,R 1 -100 +100 Open loop voltage gain +AVSVOUT= +10 V, RL= 2 k, CL= 50 pF 1,2,3 01

36、25 kV/V M,D,P,L,R 1 25 -AVSVOUT= -10 V, RL= 2 k, CL= 50 pF 1,2,3 25 M,D,P,L,R 1 25 Common mode rejection ratio -CMRR +VS= 25 V, -VS= -5 V, 1,2,3 01 80 dB VOUT= +10 V, VS/H= 10.8 V M,D,P,L,R 1 80 +CMRR +VS= 5 V, -VS= -25 V, 1,2,3 80 VOUT= -10 V, VS/H= 9.2 V M,D,P,L,R 1 80 See footnotes at end of tabl

37、e. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95669 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics

38、 Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min MaxOutput current +IOUTVOUT= +10 V, TA= +25C 1 01 +15 mA M,D,P,L,R 1 +10 -IOUTVOUT= -10 V, TA= +25C 1 -15 M,D,P,L,R 1 -10 Output voltage swing +VOPRL= 2 k, CL= 50 pF 1,2

39、,3 01 +10 V M,D,P,L,R 1 +10 -VOPRL= 2 k, CL= 50 pF 1,2,3 -10 M,D,P,L,R 1 -10 Power supply current +ICCTA= +25C 1 01 5.5 mA M,D,P,L,R 1 5.5 -ICCTA= +25C 1 -3.5 M,D,P,L,R 1 -3.5 Power supply rejection ratio +PSRR +VS= 10 and 20 V, -VS= -15 and -15 V 1,2,3 01 80 dB M,D,P,L,R 1 80 -PSRR +VS= 15 and 15 V

40、, -VS= -10 and -20 V 1,2,3 80 M,D,P,L,R 1 80 Digital input current IIN1VIN1= 0 V 1,2,3 01 800 A M,D,P,L,R 1 800 IIN2VIN2= 5 V 1,2,3 20 M,D,P,L,R 1 20 Digital input voltage VIL1,2,3 01 0.8 V M,D,P,L,R 1 0.8 VIH1,2,3 2.0 M,D,P,L,R 1 2.0 See footnotes at end of table. Provided by IHSNot for ResaleNo re

41、production or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95669 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/

42、 2/ 3/ -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Drift current IDVIN= 0 V, RL= 2 k, 2 01 -10 10 nA CL= 50 pF, TA= +125C, S/H pin at 4.0 V M,D,P,L,R 1 -10 10 Hold mode feedthrough attenuation VATTEN VIN= 20 VPP, AV= +1, 4/ 4,5,6 01 70 dB CL= 50 pF, RL=

43、 2 k, fIN= 50 kHz Gain bandwidth product GBWP VIN= 100 mVPP, 4/ 4 01 2.5 MHz AV= +1, CL= 50 pF, RL= 2 k, TA= +25C Hold step error 5/ VERRVS/H= 0 V and 4 V, 9 01 -20 20 mV tR(VS/H) 30 ns, TA= +25C M,D,P,L,R 9 -20 20 Transient response (rise time and fall time) TRTRVOUT= 200 mVPP, 9 01 100 ns AV= +1,

44、CL= 50 pF, RL= 2 k, TA= +25C M,D,P,L,R 9 100 TRTF9 100 M,D,P,L,R 9 100 Transient response (overshoot) TR+OSVOUT= 200 mVPP, 9 01 40 % AV= +1, CL= 50 pF, RL= 2 k, TA= +25C M,D,P,L,R 9 40 TR-OS9 40 M,D,P,L,R 9 40 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking

45、permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95669 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43218-3990 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics Continued. Test Symbol Conditions 1/ 2/ 3/ -55C TA +125C unle

46、ss otherwise specified Group A subgroups Device type Limits Unit Min Max Transient response (slew rate) TR+SRVOUT= 10 VPP, 9 01 3.5 V/s AV= +1, CL= 50 pF, RL= 2 k, TA= +25C M,D,P,L,R 9 2.0 TR-SR9 3.5 M,D,P,L,R 9 2.0 Acquisition time (0.1%) +tACQVOUT= 0 V and +10 V, 4/ AV= +1, CL= 50 pF, RL= 2 k, TA=

47、 +25C 9 01 4 s -tACQVOUT= 0 V and -10 V, 4/ AV= +1, CL= 50 pF, RL= 2 k, TA= +25C 4 Acquisition time (0.01%) +tACQVOUT= 0 V and +10 V, 4/ AV= +1, CL= 50 pF, RL= 2 k, TA= +25C 9 01 6 s -tACQVOUT= 0 V and -10 V, 4/ AV= +1, CL= 50 pF, RL= 2 k, TA= +25C 6 1/ Unless otherwise specified, device tested at +

48、VS= +15 V, -VS= -15 V, VIL= 0.8 V (sample), VIH= 2.0 V (hold), CH= 1000 pF, and -INPUT pin tied to OUTPUT pin. See figure 3. 2/ Devices supplied to this drawing meet all levels M, D, P, L, and R of irradiation however this device is only tested at the R level (see 1.5 herein). Pre and post irradiation values are identical unless otherwise specified in table I. When performing post irradiation electrical measurements for any RHA level, TA= +25C. 3/ These parts ma