DLA SMD-5962-95670 REV C-2003 MICROCIRCUIT LINEAR RADIATION HARDENED LOW POWER OPERATIONAL AMPLIFIER MONOLITHIC SILICON《抗辐射低功率运算放大器硅单片电路线型微电路》.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Add device type 02. Technical and editorial changes throughout. 96-03-25 M.A. FRYE B Changes to 1.3 and 1.4. Update boilerplate. -rrp 99-06-09 R. MONNIN C Replaced reference to MIL-STD-973 with reference to MIL-PRF-38535. Changes to 1.5. - gt 03-

2、09-24 R. MONNIN REV SHET REV SHET REV STATUS REV C C C C C C C C C C C C C C OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DEFENSE SUPPLY CENTER COLUMBUS STANDARD MICROCIRCUIT DRAWING CHECKED BY RAJESH PITHADIA COLUMBUS, OHIO 43216 http:/www.dscc.dla.mil THIS DRA

3、WING IS AVAILABLE FOR USE BY ALL DEPARTMENTS APPROVED BY MICHAEL FRYE MICROCIRCUIT, LINEAR, RADIATION HARDENED, LOW POWER, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON AND AGENCIES OF THE DEPARTMENT OF DEFENSE DRAWING APPROVAL DATE 95-08-30 AMSC N/A REVISION LEVEL C SIZE A CAGE CODE 67268 5962-95670 SH

4、EET 1 OF 14 DSCC FORM 2233 APR 97 5962-E169-03 DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95670 DEFENSE SUPPLY CENTER COLU

5、MBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M) and space application (device class V). A choice of case outlines and lead finishes are

6、available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 D 89760 01 V C A Federal stock class designator RHA designator (see 1.2.1)

7、Devicetype (see 1.2.2) Deviceclass designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. Device class M

8、 RHA marked devices meet the MIL-PRF-38535, appendix A specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function Temper

9、ature range 01 HS-2700ARH Radiation hardened, D.I., low -55C to +125C power, operational amplifier 02 HS-2700RH Radiation hardened, D.I., low -35C to +125C power, operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance lev

10、el as follows: Device class Device requirements documentation M Vendor self-certification to the requirements for MIL-STD-883 compliant, non-JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s). The

11、 case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C GDIP1-T14 or CDIP2-T14 14 Dual-in-line G MACY1-X8 8 Can 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,

12、appendix A for device class M. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95670 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximu

13、m ratings. 1/ Voltage between +VSand -VS. +44 V Differential input voltage (VIND). 18 V Voltage at either input terminal +VSto -VSMaximum package power dissipation (PD) at TA= +125C: Case C 0.67 W 2/ Case G 0.31 W 2/ Junction temperature (TJ) +175C Storage temperature range . -65C to +150C Lead temp

14、erature (soldering, 10 seconds) . +275C Thermal resistance, junction-to-case (JC): Case C 20C/W Case G 70C/W Thermal resistance, junction-to-ambient (JA): Case C 75C/W Case G 160C/W 1.4 Recommended operating conditions. Supply voltage range (VS) . 15 V Common mode input voltage (VINCM) . (+VS- -VS)

15、Load resistance (RL) 2 k Ambient operating temperature range (TA): Device type 01 -55C to +125C Device type 02 -35C to +125C 1.5 Radiation features. Maximum total dose available (dose rate = 50 300 rads (Si)/s) . 10 Krads (Si) 3/ 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and h

16、andbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and suppleme

17、nt thereto, cited in the solicitation. SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade perfo

18、rmance and affect reliability. 2/ If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: 13.3 mW/C for case C and 6.3 mW/C for case G. 3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dos

19、e rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-9

20、5670 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 4 DSCC FORM 2234 APR 97 STANDARDS DEPARTMENT OF DEFENSE MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. HANDBOOKS DEPARTMENT OF DEFENSE MIL-HDB

21、K-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

22、 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMEN

23、TS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function

24、 as described herein. The individual item requirements for device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified herein. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as

25、specified in MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3

26、Radiation exposure circuit. The radiation exposure circuit shall be as specified on figure 2. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation parameter limits are as spe

27、cified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The part shall be marked

28、with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked as listed in MIL-HDBK-103. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA prod

29、uct using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. Marking for device class M shall be in accordance with MIL-PRF-38535, appendix A. 3.5.1 Certification/compliance mark. The certification mark for device clas

30、ses Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. 3.6 Certificate of compliance. For device classes Q and V, a certificate of compliance shall be required from a QML-38535 listed manufactu

31、rer in order to supply to the requirements of this drawing (see 6.6.1 herein). For device class M, a certificate of compliance shall be required from a manufacturer in order to be listed as an approved source of supply in MIL-HDBK-103 (see 6.6.2 herein). The certificate of compliance submitted to DS

32、CC-VA prior to listing as an approved source of supply for this drawing shall affirm that the manufacturers product meets, for device classes Q and V, the requirements of MIL-PRF-38535 and herein or for device class M, the requirements of MIL-PRF-38535, appendix A and herein. Provided by IHSNot for

33、ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95670 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1

34、/ unless otherwise specified Device type Group A subgroups Limits Unit Min Max Input offset voltage VIOVCM= 0 V 2/ All 1 -3 +3 mV 2, 3 -5 +5 M, D 3/ 1 -5 +5 Input bias current +IIBVCM= 0 V, +RS= 10 k, All 1 -20 +20 nA -RS= 100 2/ 2, 3 -50 +50 M, D 3/ 1 -50 +50 -IIBVCM= 0 V, +RS= 100 , 1 -20 +20 -RS=

35、 10 k 2/ 2, 3 -50 +50 M, D 3/ 1 -50 +50 Input offset current IIOVCM= 0 V, +RS= 10 k, All 1 -10 +10 nA -RS= 10 k 2/ 2, 3 -30 +30 M, D 3/ 1 -30 +30 Large signal voltage gain +AVOLVOUT= 0 V and +10 V 2/ RL= 2 k All 1 200 kV/V 2, 3 100 M, D 3/ 1 100 -AVOLVOUT= 0 V and -10 V 2/ RL= 2 k 1 200 2, 3 100 M,

36、D 3/ 1 100 Common mode rejection ratio +CMRR VCM= +10 V 2/ +VS= +5 V, -VS= -25 V, VOUT= -10 V All 1, 2, 3 86 dB M, D 3/ 1 86 -CMRR VCM= -10 V 2/ +VS= +25 V, -VS= -5 V, VOUT= +10 V 1, 2, 3 86 M, D 3/ 1 86 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permit

37、ted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95670 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ unless otherwise specified D

38、evice type Group A subgroups Limits Unit Min Max Output voltage swing +VOUTRL= 2 k All 1 +12 V 2, 3 +11 M, D 3/ 1 +11 -VOUTRL= 2 k 1 -12 2, 3 -11 M, D 3/ 1 -11 Output current +IOUTVOUT= -10 V 2/ All 1, 2, 3 +10 mA M, D 3/ 1 +10 -IOUTVOUT= +10 V 2/ 1, 2, 3 -10 M, D 3/ 1 -10 Quiescent power supply cur

39、rent +ICCIOUT= 0 mA 2/ All 1, 2, 3 150 A M, D 3/ 1 150 -ICCIOUT= 0 mA 2/ 1, 2, 3 -150 M, D 3/ 1 -150 Power supply rejection ratio +PSRR VS= 10 V 2/ +V = 20 V and -V = -15 V +V = 10 V and -V = -15 V All 1, 2, 3 86 dB M, D 3/ 1 86 -PSRR VS= 10 V 2/ +V = 15 V and -V = -20 V +V = 15 V and -V = -10 V 1,

40、2, 3 86 M, D 3/ 1 86 Offset voltage adjustment +VIOAD2/ 4/ All 1, 2, 3 VIO- 1 mV M, D 3/ 1 VIO- 1 -VIOAD2/ 4/ 1, 2, 3 VIO+ 1 M, D 3/ 1 VIO+ 1 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING

41、 SIZE A 5962-95670 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ unless otherwise specified Device type Group A subgroups Limits Unit Min Max Slew rate +SR

42、 VOUT= -4 V to +4 V 5/ All 4 10 V/s 5, 6 8 M, D 3/ 4 8 -SR VOUT= +4 V to -4 V 5/ 4 10 5, 6 8 M, D 3/ 4 8 Rise and fall time tRVOUT= 0 V and +160 mV measured at 10% and 90% points All 9 2 s 4/ 10, 11 3.5 M, D 3/ 9 3.5 tFVOUT= 0 V and -160 mV measured at 10% and 90% points 9 2 5/ 10, 11 3.5 M, D 3/ 9

43、3.5 Overshoot +OS VOUT= 0 V and +160 mV All 9 35 % 5/ 10, 11 40 M, D 3/ 9 40 -OS VOUT= 0 V and -160 mV 9 35 5/ 10, 11 40 M, D 3/ 9 40 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A

44、5962-95670 DEFENSE SUPPLY CENTER COLUMBUS COLUMBUS, OHIO 43216-5000 REVISION LEVEL C SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. 1/ Devices supplied to this drawing meet all levels M and D of irradiation. However, this device is only tested at the D lev

45、el. Pre and post irradiation values are identical unless otherwise specified in table I. 2/ Unless otherwise specified, device tested at +VS= +15 V, -VS= -15 V, source resistance (RS) = 100 , load resistance (RL) = 500 k, and VOUT= 0 V. For device type 01, -55C TA +125C. For device type 02, -35C TA

46、+125C. 3/ These parts may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. Radiation end point limits for the noted parameters are guaranteed only for the conditions specified in MIL-STD-883, method 1019, condition A. 4/ Offset adjustment range is VIO

47、(measured) 1 mV minimum referred to output. This test is for functionality only to assure adjustment through 0 V. 5/ Unless otherwise specified, device tested at +VS= +15 V, -VS= -15 V, load resistance (RL) = 2 k, capacitance load (CL) = 75 pF, and AVCL= +3 V/V. See figure 3. For device type 01, -55

48、C TA +125C. For device type 02, -35C TA +125C. 3.7 Certificate of conformance. A certificate of conformance as required for device classes Q and V in MIL-PRF-38535 or for device class M in MIL-PRF-38535, appendix A shall be provided with each lot of microcircuits delivered to this drawing. 3.8 Notification of change for device class M. For device class M, notification to DSCC-VA of change o