DLA SMD-5962-95687 REV E-2013 MICROCIRCUIT LINEAR RADIATION HARDENED LOW POWER PROGRAMMABLE OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Make changes to VIO, +IIB, -IIB, IIO, +AVOL, -AVOL, +ICC, -ICC, tR, tFtests and footnote three as specified under TABLE I. - ro 99-03-19 R. MONNIN B Make change to 1.5 and glassivation as specified in APPENDIX A. - ro 99-04-15 R. MONNIN C Replace

2、d reference to MIL-STD-973 with reference to MIL-PRF-38535. -gt 03-10-03 R. MONNIN D Update boilerplate paragraphs. - ro 09-05-12 J. RODENBECK E Add device type 02. Make changes to footnote 2/, delete footnote 3/, and renumber footnotes as specified under Table I. Delete figure 2 irradiation circuit

3、 and device class M references. - ro 13-06-11 C. SAFFLE REV SHEET REV E E E E E SHEET 15 16 17 18 19 REV STATUS REV E E E E E E E E E E E E E E OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY RICK OFFICER DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime

4、.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY RAYMOND MONNIN MICROCIRCUIT, LINEAR, RADIATION HARDENED, LOW POWER, PROGRAMMABLE OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAW

5、ING APPROVAL DATE 98-10-15 AMSC N/A REVISION LEVEL E SIZE A CAGE CODE 67268 5962-95687 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E287-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95687 DLA LAND AND MARIT

6、IME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device class Q) and space application (device class V). A choice of case outlines and lead finishes are available

7、 and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. 1.2 PIN. The PIN is as shown in the following example: 5962 F 95687 01 V G A Federal stock class designator RHA designator (see 1.2.1) Device typ

8、e (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a

9、 non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-3530ARH Radiation hardened, dielectric isolated, low power programmable operational amplifier 02 HS-3530AEH Radiation hardened, dielectric isolated, l

10、ow power programmable operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q or V Certification and qualification to MIL-PRF-38535 1.2.4 Case outline(s).

11、The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style G MACY1-X8 8 Can X CDFP3-F10 10 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V. Provided by IHSNot for ResaleN

12、o reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95687 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Voltage between +VSand -VSterminals . 40 V Differential

13、input voltage . 20 V Voltage at either input terminal . +VSto -VSISET(current at ISET) 500 A VSET(voltage to GND at ISET) . (+VS- 2.0 V) VSET +VSOutput short circuit duration Indefinite 2/ Maximum power dissipation (PD) (TA= +125C): Case outline G . 0.31 W Case outline X . 0.35 W Junction temperatur

14、e (TJ) . +175C Storage temperature range . -65C to +150C Lead temperature (soldering 10 seconds) 275C Thermal resistance, junction-to-case (JC): Case outline G . 70C/W Case outline X . 36C/W Thermal resistance, junction-to-ambient (JA): Case outline G . 160C/W Case outline X . 140C/W 1.4 Recommended

15、 operating conditions. Supply voltage range (VS) 3 V to 15 V Common mode input voltage (VINCM) (+VS- -VS) Load resistance (RL) . 2 k Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features: Maximum total dose available (dose rate = 50 300 rads(Si)/s) : Device types 01 . 300 k

16、rads(Si) 3/ Device types 02 . 300 krads(Si) 4/ Maximum total dose available (dose rate .010 rad(Si)/s): Device type 02 50 krads(Si) 4/ _ 1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect

17、 reliability. 2/ Caution. Continuous long duration short-circuit operation may degrade the operating life of the device. 3/ Device type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. The radiation end point limits for the noted parameters are

18、 guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 300 krads(Si). 4/ Device type 02 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a

19、maximum total dose of 300 krads(Si) and condition D to a maximum total dose of 50 krads(Si). Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95687 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVE

20、L E SHEET 4 DSCC FORM 2234 APR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cite

21、d in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines

22、. DEPARTMENT OF DEFENSE HANDBOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil/ or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Phil

23、adelphia, PA 19111-5094.) 2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has bee

24、n obtained. 3. REQUIREMENTS 3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the

25、form, fit, or function as described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for de

26、vice classes Q and V. 3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Radiation exposure circuit. The radiation exposure circuit shall be maintained by the manufacturer unde

27、r document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrical performance characteristics and postirradiation param

28、eter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for each subgroup are defined in table I. 3.5 Marking. The

29、 part shall be marked with the PIN listed in 1.2 herein. In addition, the manufacturers PIN may also be marked. For packages where marking of the entire SMD PIN number is not feasible due to space limitations, the manufacturer has the option of not marking the “5962-“ on the device. For RHA product

30、using this option, the RHA designator shall still be marked. Marking for device classes Q and V shall be in accordance with MIL-PRF-38535. 3.5.1 Certification/compliance mark. The certification mark for device classes Q and V shall be a “QML“ or “Q“ as required in MIL-PRF-38535. The compliance mark

31、for device class M shall be a “C“ as required in MIL-PRF-38535, appendix A. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95687 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 5 DSCC

32、FORM 2234 APR 97 TABLE I. Electrical performance characteristics. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified VSGroup A subgroups Device type Limits Unit Min Max Input offset voltage VIOVCM= 0 V, 15 V 1 01,02 -3 3 mV ISET= 1.5 A and 15 A 2,3 -5 5 M,D,P,L,R,F 2/ 1 -5 5 VCM= 0 V

33、, 3 V 1 -3 3 ISET= 1.5 A and 15 A 2,3 -5 5 M,D,P,L,R,F 2/ 1 -5 5 Input bias current +IIBVCM= 0 V, +RS= 10 k, 15 V 1 01,02 -40 40 nA -RS= 100 , ISET= 15 A 2 -50 50 3 -60 60 M,D,P,L,R,F 2/ 1 -100 100 -IIBVCM= 0 V, +RS= 100 , 15 V 1 -40 40 -RS= 10 k, ISET= 15 A 2 -50 50 3 -60 60 M,D,P,L,R,F 2/ 1 -100 1

34、00 Input offset current IIOVCM= 0 V, +RS= 10 k, 15 V 1 01,02 -15 15 nA -RS= 100 , ISET= 15 A 2 -20 20 3 -30 30 M,D,P,L,R,F 2/ 1 -30 30 Large signal voltage gain +AVOLVOUT= 0 V and +10 V, 3/ 15 V 1 01,02 65 kV/V ISET= 1.5 A 2,3 25 M,D,P,L,R,F 2/ 1 15 VOUT= 0 V and +10 V, 3/ 1 80 ISET= 15 A 2,3 50 M,D

35、,P,L,R,F 2/ 1 30 VOUT= 0 V and +1 V, 3/ 3 V 1 25 ISET= 1.5 A 2,3 15 M,D,P,L,R,F 2/ 1 10 VOUT= 0 V and +1 V, 3/ 1 25 ISET= 15 A 2,3 25 M,D,P,L,R,F 2/ 1 10 See footnote at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRC

36、UIT DRAWING SIZE A 5962-95687 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified VSGroup A subgroups Device type Limits Unit Min

37、 Max Large signal voltage gain -AVOLVOUT= 0 V and -10 V, 3/ 15 V 1 01,02 65 kV/V ISET= 1.5 A 2,3 25 M,D,P,L,R,F 2/ 1 15 VOUT= 0 V and -10 V, 3/ 1 80 ISET= 15 A 2,3 50 M,D,P,L,R,F 2/ 1 30 VOUT= 0 V and -1 V, 3/ 3 V 1 25 ISET= 1.5 A 2,3 15 M,D,P,L,R,F 2/ 1 10 VOUT= 0 V and -1 V, 3/ 1 25 ISET= 15 A 2,3

38、 25 M,D,P,L,R,F 2/ 1 10 Common mode rejection ratio +CMRR VCM= +5 V, VOUT= -5 V, 15 V 1,2,3 01,02 80 dB +VS= +10 V, -VS= -20 V, ISET= 1.5 A and 15 A -CMRR VCM= -5 V, VOUT= +5 V, 15 V 1,2,3 80 +VS= +20 V, -VS= -10 V, ISET= 1.5 A and 15 A +CMRR VCM= +1.5 V, VOUT= -1.5 V, 3 V 1,2,3 80 +VS= +1.5 V, -VS=

39、 -4.5 V, ISET= 1.5 A and 15 A -CMRR VCM= -1.5 V, VOUT= +1.5 V, 3 V 1,2,3 80 +VS= +4.5 V, -VS= -1.5 V, ISET= 1.5 A and 15 A See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95687

40、DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified VSGroup A subgroups Device type Limits Unit Min Max Output voltage swing +VOU

41、T3/ 15 V 1 01,02 12.5 V 2,3 10.5 3/ 3 V 1,2,3 2.0 -VOUT3/ 15 V 1 -12.5 2,3 -10.5 3/ 3 V 1,2,3 -2.0 Output current +IOUTISET= 1.5 A, RL= 2 k 15 V 1 01,02 0.25 mA ISET= 15 A, RL= 2 k 2.5 -IOUTISET= 1.5 A, RL= 2 k 1 -0.25 ISET= 15 A, RL= 2 k -2.5 Quiescent power supply current +ICCISET= 1.5 A, IOUT= 0

42、mA 15 V 1,2,3 01,02 15 A M,D,P,L,R,F 2/ 1 15 ISET= 15 A, IOUT= 0 mA 1 150 2,3 160 M,D,P,L,R,F 2/ 1 160 ISET= 1.5 A, IOUT= 0 mA 3 V 1,2,3 15 M,D,P,L,R,F 2/ 1 15 ISET= 15 A, IOUT= 0 mA 1 150 2,3 160 M,D,P,L,R,F 2/ 1 160 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or net

43、working permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95687 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 8 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C unless ot

44、herwise specified VSGroup A subgroups Device type Limits Unit Min Max Quiescent power supply -ICCISET= 1.5 A, IOUT= 0 mA 15 V 1,2,3 01,02 -15 A current M,D,P,L,R,F 2/ 1 -15 ISET= 15 A, IOUT= 0 mA 1 -150 2,3 -160 M,D,P,L,R,F 2/ 1 -160 ISET= 1.5 A, IOUT= 0 mA 3 V 1,2,3 -15 M,D,P,L,R,F 2/ 1 -15 ISET= 1

45、5 A, IOUT= 0 mA 1 -150 2,3 -160 M,D,P,L,R,F 2/ 1 -160 Power supply rejection ratio +PSRR VS= 10 V, ISET= 1.5 A and 15 A, 15 V 1,2,3 01,02 80 dB +VS= +10 V, -VS= -15 V, +VS= +20 V, -VS= -15 V VS= 1.5 V, ISET= 1.5 A and 15 A, 3 V 80 +VS= +3 V, -VS= -3 V, +VS= +4.5 V, -VS= -3 V -PSRR VS= 10 V, ISET= 1.

46、5 A and 15 A, 15 V 1,2,3 80 dB +VS= +15 V, -VS= -10 V, +VS= +15 V, -VS= -20 V VS= 1.5 V, ISET= 1.5 A and 15 A, 3 V 80 +VS= +3 V, -VS= -3 V, +VS= +3 V, -VS= -4.5 V See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD

47、 MICROCIRCUIT DRAWING SIZE A 5962-95687 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL E SHEET 9 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions 1/ -55C TA +125C unless otherwise specified VSGroup A subgroups Device type Limit

48、s Unit Min Max Slew rate 4/ +SR VOUT= -10 V to +10 V, 15 V 4 01,02 0.025 V/s ISET= 1.5 A VOUT= -10 V to +10 V, 0.25 ISET= 15 A VOUT= -2 V to +2 V, 3 V 4 0.01 ISET= 1.5 A VOUT= -2 V to +2 V, 0.1 ISET= 15 A -SR VOUT= +10 V to -10 V, 15 V 4 0.025 ISET= 1.5 A VOUT= +10 V to -10 V, 0.25 ISET= 15 A VOUT= +2 V to -2 V, 3 V 4 0.01 ISET= 1.5 A VOUT=