DLA SMD-5962-95690 REV G-2013 MICROCIRCUIT LINEAR RADIATION HARDENED QUAD LOW NOISE OPERATIONAL AMPLIFIER MONOLITHIC SILICON.pdf

1、 REVISIONS LTR DESCRIPTION DATE (YR-MO-DA) APPROVED A Sheet 6: Table I, Output current test, -IOUT; add M, D, L, R box to the conditions column and add -7 mA max to the limits column for that condition. Made changes in accordance with N.O.R. 5962-R170-96. 96-07-02 M. A. FRYE B Sheet 2: 1.2.4 Case ou

2、tlines; for the outline letter column add “X”. For description designator column add “CDFP3-F14”. For terminals column add “14” For package style column add “Flat pack”. Sheet 3: 1.3 Absolute maximum ratings; delete “Maximum package power dissipation (TA= +125C) 0.67 W”. For thermal resistance, junc

3、tion-to-case (JC), change from “24C/W to “case C 24C/W, case X 30”C/W”. For thermal resistance, junction-to-ambient (JA), change from “75C/W to “case C 75C/W, case X 116”C/W”. Sheet 8: FIGURE 1. Terminal connections; for case outline, changes from “C” to “C, X”. Made changes in accordance with N.O.R

4、. 5962-R371-97. 97-06-25 R. MONNIN C Add Appendix A for microcircuit die. Redrawn. - ro 98-05-21 R. MONNIN D Make change to boilerplate and add class T devices. - ro 98-12-02 R. MONNIN E Add level P to table I. Make change to 1.5. - ro 99-04-13 R. MONNIN F Add dose rate footnote under paragraph 1.5

5、and Table I. Delete Neutron and Dose rate induced latchup tests. - ro 05-10-26 R. MONNIN G Add device type 02. Delete dose rate burnout paragraph 4.4.4.3. Make changes to footnotes 3/, 4/ and add 5/ as specified under paragraph 1.5. Make change to footnotes 2/ and 3/ as specified under Table I. Make

6、 change to substrate under figure A-1. Delete Table III and device class M references. - ro 13-07-31 C. SAFFLE REV SHEET REV G G G G G SHEET 15 16 17 18 19 REV STATUS REV G G G G G G G G G G G G G G OF SHEETS SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY DAN WONNELL DLA LAND AND MARITI

7、ME COLUMBUS, OHIO 43218-3990 http:/www.landandmaritime.dla.mil STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE CHECKED BY RAJESH PITHADIA APPROVED BY MICHAEL A. FRYE MICROCIRCUIT, LINEAR, RADIATION HARDENED, QUAD LOW NOISE,

8、 OPERATIONAL AMPLIFIER, MONOLITHIC SILICON DRAWING APPROVAL DATE 96-02-15 AMSC N/A REVISION LEVEL G SIZE A CAGE CODE 67268 5962-95690 SHEET 1 OF 19 DSCC FORM 2233 APR 97 5962-E442-13 Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCU

9、IT DRAWING SIZE A 5962-95690 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 2 DSCC FORM 2234 APR 97 1. SCOPE 1.1 Scope. This drawing documents three product assurance class levels consisting of high reliability (device class Q), space application (device class V) and for appr

10、opriate satellite and similar applications (device class T). A choice of case outlines and lead finishes are available and are reflected in the Part or Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels is reflected in the PIN. For device class T, the use

11、r is encouraged to review the manufacturers Quality Management (QM) plan as part of their evaluation of these parts and their acceptability in the intended application. 1.2 PIN. The PIN is as shown in the following example: 5962 R 95690 01 V C C Federal stock class designator RHA designator (see 1.2

12、.1) Device type (see 1.2.2) Device class designator Case outline (see 1.2.4) Lead finish (see 1.2.5) / (see 1.2.3) / Drawing number 1.2.1 RHA designator. Device classes Q, T and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are marked with the appropriate RHA designator. A das

13、h (-) indicates a non-RHA device. 1.2.2 Device type(s). The device type(s) identify the circuit function as follows: Device type Generic number Circuit function 01 HS-5104ARH Radiation hardened, dielectrically isolated low noise, quad, operational amplifier 02 HS-5104AEH Radiation hardened, dielectr

14、ically isolated low noise, quad, operational amplifier 1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as follows: Device class Device requirements documentation Q, V Certification and qualification to MIL-PRF-38535 T Certificatio

15、n and qualification to MIL-PRF-38535 with performance as specified in the device manufacturers approved quality management plan. 1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows: Outline letter Descriptive designator Terminals Package style C CDIP2-T14 14 D

16、ual-in-line X CDFP3-F14 14 Flat pack 1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q, T and V. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95690 DLA LAND AND MARIT

17、IME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 3 DSCC FORM 2234 APR 97 1.3 Absolute maximum ratings. 1/ Voltage between V+ and V- . 40 V Differential input voltage 7 V Voltage at either input terminal +VSto -VSPeak output current . Indefinite (one amplifier shorted to GND) Maximum device power

18、 dissipation (PD) . 0.23 W 2/ Thermal resistance, junction-to-case (JC): Case C 24C/W Case X . 30C/W Thermal resistance, junction-to-ambient (JA): Case C 75C/W Case X . 116C/W Junction temperature (TJ) +175C Storage temperature range -65C to +150C Lead temperature (soldering, 10 seconds) +275C 1.4 R

19、ecommended operating conditions. Supply voltage range . 5 V to 15 V Input low voltage range . 0 V to +0.8 V Common-mode input voltage (VCMIN) . 1/2 (V+ - V-) Load resistance (RL) . 2 k Ambient operating temperature range (TA) . -55C to +125C 1.5 Radiation features. Maximum total dose available (dose

20、 rate = 50 300 rads(Si)/s): Device type 01: 100 krads(Si) 3/ Device type 02 . 100 krads(Si) 4/ Maximum total dose available (dose rate 0.01 rad(Si)/s): Device type 02 . 50 krads(Si) 4/ Single event latch-up (SEL) . No latch up 5/ _ 1/ Stresses above the absolute maximum rating may cause permanent da

21、mage to the device. Extended operation at the maximum levels may degrade performance and affect reliability. 2/ The power dissipation is the total power dissipated in the amplifier with the amplifier biased into its normal operating range and without any output load. PD= VCCICC+ VEEIEEat +125C. 3/ D

22、evice type 01 may be dose rate sensitive in a space environment and may demonstrate enhanced low dose rate effects. The radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krad

23、s(Si). 4/ Device type 02 radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, method 1019, condition A to a maximum total dose of 100 krads(Si), and condition D to a maximum total dose of 50 krads(Si). 5/ Devices use dielectrically i

24、solated (DI) technology and latch up is physically not possible. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95690 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 4 DSCC FORM 2234 A

25、PR 97 2. APPLICABLE DOCUMENTS 2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or con

26、tract. DEPARTMENT OF DEFENSE SPECIFICATION MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-883 - Test Method Standard Microcircuits. MIL-STD-1835 - Interface Standard Electronic Component Case Outlines. DEPARTMENT OF DEFENSE HAND

27、BOOKS MIL-HDBK-103 - List of Standard Microcircuit Drawings. MIL-HDBK-780 - Standard Microcircuit Drawings. (Copies of these documents are available online at http:/quicksearch.dla.mil or from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.) 2.2

28、 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3

29、.1 Item requirements. The individual item requirements for device classes Q, T and V shall be in accordance with MIL-PRF-38535 as specified herein, or as modified in the device manufacturers Quality Management (QM) plan. The modification in the QM plan shall not affect the form, fit, or function as

30、described herein. 3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document. 3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein for device classes Q, T and V. 3

31、.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein. 3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1. 3.2.3 Timing diagrams. The timing diagrams shall be as specified on figure 2. 3.2.4 Radiation exposure circuit. The radiation exposu

32、re circuit shall be maintained by the manufacturer under document revision level control and shall be made available to the preparing and acquiring activity upon request. 3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the electrica

33、l performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full ambient operating temperature range. 3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table IIA. The electrical tests for

34、 each subgroup are defined in table I. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95690 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 5 DSCC FORM 2234 APR 97 TABLE I. Electrical

35、performance characteristics. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Input offset voltage VIOVCM= 0 V 1/ 1 01,02 -3 +3 mV 2,3 -15 +15 M,D,P,L,R 2/ 3/ 1 -5 +5 Input bias current +IIBVCM= 0 V, 1/ 1 01,02 -300 +300 nA +RS= 10 k,

36、-RS= 100 2,3 -550 +550 M,D,P,L,R 2/ 3/ 1 -1 +1 A -IIBVCM= 0 V, 1/ 1 -300 +300 nA +RS= 100 , -RS= 10 k 2,3 -550 +550 M,D,P,L,R 2/ 3/ 1 -1 +1 A Input offset current IIOVCM= 0 V, 1/ 1 01,02 -300 +300 nA +RS= 10 k, -RS= 10 k 2,3 -400 +400 M,D,P,L,R 2/ 3/ 1 -1 +1 A Large signal voltage gain +AVOLVOUT= 0

37、V and +10 V 1/ 1 01,02 75 kV / V RL= 2 k 2 100 3 50 M,D,P,L,R 2/ 3/ 1 40 -AVOLVOUT= 0 V and -10 V 1/ 1 75 RL= 2 k 2 100 3 50 M,D,P,L,R 2/ 3/ 1 40 See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRA

38、WING SIZE A 5962-95690 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 6 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TA +125C unless otherwise specified Group A subgroups Device type Limits Unit Min Max Common

39、mode rejection ratio +CMRR V+ = 3 V, V- = -27 V 1/ VCM= +12 V, VOUT= -12 V 1,2,3 01,02 80 dB -CMRR V+ = 27 V, V- = -3 V 1/ VCM= +12 V, VOUT= -12 V 80 Output voltage swing +VOUTRL= 2 k 1/ 1,2,3 01,02 10 V RL= 10 k 1/ 12 -VOUTRL= 2 k 1/ -10 RL= 10 k 1/ -12 Output current +IOUTVOUT= -5 V 1/ 1,2,3 01,02

40、 10 mA -IOUTVOUT= +5 V 1/ -10 M,D,P,L,R 2/ 3/ 1 -7 Quiescent power supply current +ICCIOUT= 0 mA 1/ 1 01,02 6.5 mA 2,3 7.5 -ICCIOUT= 0 mA 1/ 1 -6.5 2,3 -7.5 Power supply rejection ratio +PSRR VSUP= 10 V, V- = -15 V 1/ V+ = 10 V and 20 V 1,2,3 01,02 80 dB -PSRR VSUP= 10 V, V+ = 15 V 1/ V- = -10 V and

41、 -20 V 80 Rise and fall time TRVOUT= 0 V to 200 mV, 4/ 4 01,02 200 ns 10% TR 90%, see figure 2 5,6 250 TFVOUT= 0 V to -200 mV, 4/ 4 200 10% TR 90%, see figure 2 5,6 250 Settling time TSAVCL= -1, 5/ 6/ 7/ see figure 2 9 01,02 6 s See footnotes at end of table. Provided by IHSNot for ResaleNo reproduc

42、tion or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95690 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 7 DSCC FORM 2234 APR 97 TABLE I. Electrical performance characteristics - Continued. Test Symbol Conditions -55C TA +125C u

43、nless otherwise specified Group A subgroups Device type Limits Unit Min Max Quiescent power consumption PC VOUT= 0 V, 5/ 6/ 8/ IOUT= 0 mA 4,5,6 01,02 225 mW Slew rate +SR VOUT= -3 V to +3 V, 4/ 4 01,02 1 V / s see figure 2 5,6 0.5 -SR VOUT= +3 V to -3 V, 4/ 4 1 see figure 2 5,6 0.5 Overshoot +OS VOU

44、T= 0 V to 200 mV, 4/ 4 01,02 45 % see figure 2 5,6 50 -OS VOUT= 0 V to -200 mV, 4/ 4 45 see figure 2 5,6 50 Differential input resistance RINVCM= 0 V 5/ 6/ 4 01,02 250 k Input noise voltage density ENRS= 20 , 5/ 6/ fO= 1000 Hz 4 01,02 6 nVHz Input noise current density INRS= 20 M, 5/ 6/ fO= 1000 Hz

45、4 01,02 3 pAHz Full power bandwidth FPBW VPK= 10 V 5/ 6/ 9/ 4 01,02 32 kHz Minimum closed loop stable gain CLSG RL= 2 k, CL= 50 pF 5/ 6/ 4,5,6 01,02 1 V/V Output resistance ROUTOpen loop 5/ 6/ 4 01,02 150 Channel separation CS RS= 1 k, 5/ 6/ AVCL= 100 V/V, 4 01,02 90 dB VIN= 100 mV RMS at 10 kHz, re

46、ferenced to input See footnotes at end of table. Provided by IHSNot for ResaleNo reproduction or networking permitted without license from IHS-,-,-STANDARD MICROCIRCUIT DRAWING SIZE A 5962-95690 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 REVISION LEVEL G SHEET 8 DSCC FORM 2234 APR 97 TABLE I. E

47、lectrical performance characteristics - Continued. 1/ Unless otherwise specified, device tested at: supply voltage = 15 V, source resistance (RS) = 100 , load resistance (RL) = 100 k, VOUT= 0 V. 2/ RHA device type 01 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation. How

48、ever, device type 01 is only tested at the “R” level in accordance with MIL-STD-883 method 1019 condition A (see 1.5 herein). RHA device type 02 supplied to this drawing will meet all levels M, D, P, L, and R of irradiation for condition A and levels M, D, P, and L for condition D. However, device type 02 is only tested at the “R” level in accordance with MIL-STD-883, method 1019, condition A and tested at the “L” level in accordance with MIL-STD-883,